System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
First Claim
1. A magnetic scanning system for rapidly sweeping a high perveance beam of atomic or molecular ions over a selected surface, said beam initially propagating in a predetermined direction, said scanning system comprisinga magnetic scanning structure and an associated scanning excitation circuit for repeatedly sweeping said ion beam in one dimension in response to an oscillating magnetic field having a fundamental frequency and higher order harmonics induced by excitation current from said circuit, anda separate magnetic compensating structure and associated compensating excitation circuit spaced from said scanning structure along the beam axis, for continuously deflecting said ion beam after it has been swept by said scanning structure, to re-orient the beam to a direction substantially parallel to an output axis of said system,said scanning circuit and said compensating circuit having separate power sources having wave forms at the same fundamental frequency for their respective scanning and compensating functions, said circuits being in constant phase relationship with a predetermined phase angle difference.
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Accused Products
Abstract
Deflection apparatus is shown for high perveance ion beams, operating at 20 Hz fundamental and substantially higher order harmonics, having a magnetic structure formed of laminations with thickness in range between 0.2 and 1 millimeter. Additionally, a compensator is shown with similar laminated structures with resonant excitation circuit, operating at 20 Hz or higher, in phase locked relationship with the frequency of the previously deflected beam. Furthermore, features are shown which have broader applicability to producing strong magnetic field in magnetic gap. Among the numerous important features shown are special laminated magnetic structures, including different sets of crosswise laminations in which the field in one lamination of one set is distributed into multiplicity of laminations of the other set of coil-form structures, field detection means and feedback control system, cooling plate attached in thermal contact with number of lamination layers. Surfaces on the entry and exit sides of the compensator magnetic structure have cooperatively selected shapes to increase the length of path exposed to the force field dependently with deflection angle to compensate for contribution to deflection angle caused by higher order components. The entry and exit surfaces of the magnetic scanner and compensator structures cooperating to produce desired beam profile and desired limit on angular deviation of ions within the beam. Also shown is an accelerator comprising a set of accelerator electrodes having slotted apertures, a suppressor electrode at the exit of the electrostatic accelerator, a post-accelerator analyzer magnet having means for adjusting the angle of incidence by laterally moving the post-accelerator analyzer magnet, and a magnet to eliminate aberration created by the post-accelerator analyzer magnet. In the case of use of a spinning substrate carrier for scanning in one dimension, the excitation wave form of the scanner relates changes in scan velocity in inverse dependence with changes in the radial distance of an implant point from the rotation axis. Also an oxygen implantation method is shown with 50 mA ion beam current, the ion beam energy above 100 KeV, and the angular velocity of a rotating carrier above 50 rpm.
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Citations
35 Claims
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1. A magnetic scanning system for rapidly sweeping a high perveance beam of atomic or molecular ions over a selected surface, said beam initially propagating in a predetermined direction, said scanning system comprising
a magnetic scanning structure and an associated scanning excitation circuit for repeatedly sweeping said ion beam in one dimension in response to an oscillating magnetic field having a fundamental frequency and higher order harmonics induced by excitation current from said circuit, and a separate magnetic compensating structure and associated compensating excitation circuit spaced from said scanning structure along the beam axis, for continuously deflecting said ion beam after it has been swept by said scanning structure, to re-orient the beam to a direction substantially parallel to an output axis of said system, said scanning circuit and said compensating circuit having separate power sources having wave forms at the same fundamental frequency for their respective scanning and compensating functions, said circuits being in constant phase relationship with a predetermined phase angle difference.
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31. A method of rapidly sweeping over a selected surface a high perveance beam of atomic or molecular ions initially propagating in a predetermined direction, comprising the steps of:
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(a) introducing said ion beam to a magnetic scanning structure, (b) sweeping said ion beam in one dimension by an oscillating magnetic field having a fundamental frequency of at least 20 Hz and higher order harmonics induced by a scanning excitation current generated by a scanning excitation circuit, to produce a constantly changing deflection angle and (c) continuously re-deflecting said deflected ion beam using a separate magnetic compensating structure to re-orient said ion beam to a direction substantially parallel to an exit axis of the compensating structure by driving said magnetic compensating structure with a compensating excitation current having the same fundamental frequency as said scanning excitation current, said compensating excitation current being generated by a separate compensating circuit operating in a phase-locked mode with said scanning excitation circuit. - View Dependent Claims (32, 33)
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34. A method of implanting a uniform dose of oxygen ions into a silicon wafer to form a buried oxide layer, using an ion implantation system, comprising the steps of:
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(a) accelerating a high perveance oxygen ion beam of above 50 mA current to energy above 100 keV, (b) rotating said silicon wafer mounted on a carrier at above 50 rpm, (c) with a magnetic scanning system, scanning said ion beam in the radial direction of said carrier at a frequency above 50 Hz while maintaining a substantially constant incident angle of said beam to the surface of said silicon wafer, (d) controlling said system to obtain substantially uniform dose across the wafer under substantially uniform temperature conditions, said scanning step including deflecting said beam in an oscillating pattern using a magnetic scanner drive by a substantially triangular wave form and said controlling said system including applying compensating magnetic fields to reorient the deflected beam to a desired direction, said compensating step being performed with a dynamic magnetic deflecting compensator system driven at the same frequency in phase locked relationship with said scanning. - View Dependent Claims (35)
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Specification