Thin film transistor with nitrogen concentration gradient

• US 5,311,040 A
• Filed: 06/01/1993
• Issued: 05/10/1994
• Est. Priority Date: 03/27/1990
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nakajima, Mitsuo, Hiramatsu, Masato, Kamimura, Takaaki
• Primary Examiner(s): Mintel, William
• Assistant Examiner(s): FAHMY, WAEL M
• Application Number:
  US08/070,055
• Time in Patent Office: 343 Days
• Field of Search: 357/23.7, 357/2, 357/4, 257/57, 257/66, 257/63, 257/69
• US Class Current: 257/57
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/7866 Non-monocrystalline silicon transistors

Abstract

An inverted stagger thin film transistor includes an insulating substrate, a silicon active layer formed thereon, source and drain ohmic contact layers, source and drain electrodes respectively contacting the source and drain ohmic contact layers, and a gate electrode opposite to the channel region of the active layer through a gate insulating film. An auxiliary film consisting of a silicon film doped with nitrogen is formed in the surface of the active layer, and the ohmic contact layers contact the auxiliary film. The auxiliary film can be continuously formed from the active layer to the ohmic contact layers, thereby improving a junction state between the active layer and the ohmic contact layers.

Claims

1. A thin film transistor comprising:

a silicon active layer including source and drain regions and a channel region formed between and connecting the source and drain regions;

an electrically conductive auxiliary film comprising a silicon film doped with nitrogen, and formed on surfaces of the source, channel, and drain regions of the active layer, a nitrogen concentration in the auxiliary film having a distribution in a direction of film thickness such that the nitrogen concentration is gradually reduced toward the active layer;

source and drain ohmic contact layers separated from each other and formed on and contacting separate parts of a surface of the auxiliary film corresponding to the source and drain regions, respectively;

source and drain electrodes contacting the source and drain ohmic contact layers, respectively; and

a gate electrode opposite to the channel region of the active layer with a gate insulating film interposed therebetween.

2. A transistor according to claim 1, further comprising a protection film formed on part of a surface of the auxiliary film corresponding to the channel region.

3. A transistor according to claim 2, wherein the protection film comprises a silicon nitride film.

4. A transistor according to claim 1, wherein the nitrogen concentration in the auxiliary film is 5×

10¹⁷ atoms/cc to 1×

10²⁰ atoms/cc.

5. A transistor according to claim 2, wherein the nitrogen concentration in the auxiliary film is 5×

10¹⁷ atoms/cc to 5×

10¹⁹ atoms/cc.

6. A transistor according to claim 1, wherein the gate insulating film comprises a silicon oxide film contacting the gate electrode and a silicon nitride film contacting the active layer.

7. A transistor according to claim 1, wherein the source and drain ohmic contact layers each have extensional portions which extend and terminate above the channel region such that respective ends of the extensional portions face each other above the channel region.

8. A transistor according to claim 7, wherein the source and drain electrodes each have ends aligning with the ends of the extensional portions of the source and drain ohmic contact layers, respectively, and facing each other above the channel region.

9. An inverted staggered thin film transistor comprising:

a silicon active layer including source and drain regions and a channel region formed between and connecting the source and drain regions;

an electrically conductive auxiliary film comprising a silicon film doped with nitrogen, and formed on surfaces of the source, channel, and drain regions of the active layer, a nitrogen concentration in the auxiliary film having a distribution in a direction of film thickness such that the nitrogen concentration is gradually reduced toward the active layer;

source and drain ohmic contact layers separated from each other and formed on and contacting separate parts of a surface of the auxiliary film corresponding to the source and drain regions, respectively;

source and drain electrodes contacting the source and drain ohmic contact layers, respectively; and

a gate electrode opposite to the channel region of the active layer with a gate insulating film interposed therebetween.

10. A transistor according to claim 9, further comprising a protection film formed on part of a surface of the auxiliary film corresponding to the channel region.

11. A transistor according to claim 10, wherein the protection film comprises a silicon nitride film.

12. A transistor according to claim 9, wherein the nitrogen concentration in the auxiliary film is 5×

10¹⁷ atoms/cc to 1×

10²⁰ atoms/cc.

13. A transistor according to claim 11, wherein the source and drain ohmic contact layers each have extensional portions which extend onto and terminate on the protection film such that respective ends of the extensional portions face each other on the protection film.

14. A transistor according to claim 13, wherein the source and drain electrodes each have ends aligning with the ends of the extensional portions of the source and drain ohmic contact layers, respectively, and facing each other on the protection film.