Bidirectional semiconductor switch with hybrid construction

• US 5,311,043 A
• Filed: 05/28/1993
• Issued: 05/10/1994
• Est. Priority Date: 07/13/1992
• Status: Expired due to Fees

• Current Assignee: Asea Brown Boveri Ltd (ABB Limited)
• Original Assignee: Asea Brown Boveri Ltd (ABB Limited)
• Inventors: Stockmeier, Thomas
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US08/068,175
• Time in Patent Office: 347 Days
• Field of Search: 257/119, 257/126, 257/177, 257/773, 257/776, 257/786, 257/795
• US Class Current: 257/177
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48233 connecting the wire to a potential ring of the item
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/5386 Geometry or layout of the interconnection structure
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

In a bidirectional semiconductor switch which can be switched on and off, printed conductors which form the main term terminals (1, 2) and the control terminals (3, 4) are applied to a baseplate (9). Applied to the printed conductors, which form the main terminals (1, 2), are at least two reverse-blocking semiconductor components (5a-h) which can be switched on and off. The control electrodes (8a, 8e) and the second main electrodes (7a, 7e) of the semiconductor components (5a-h) are interconnected in such a way that the semiconductor switch has the required bidirectional switching function.

Claims

1. A bidirectional semiconductor switch comprising:

a baseplate;

a first main terminal formed on the baseplate;

a second main terminal formed on the baseplate;

a first control electrode formed on the baseplate;

a second control electrode formed on the baseplate;

at least two reverse blocking semiconductors which can be switched on and off and which are formed of a plurality of doped silicon layers;

wherein a first of the at least two reverse blocking semiconductors is formed on the first main terminal to be electrically connected to the first main terminal, and has a first connection to the second main terminal and a second connection to the first control electrode;

wherein a second of the at least two reverse blocking semiconductors is formed on the second main terminal to be electrically connected to the second main terminal, and has a third connection to the first main terminal and a fourth connection to the second control electrode.

2. The bidirectional semiconductor switch according to claim 1, wherein the baseplate comprises direct-copper-bonding ceramic.

3. The bidirectional semiconductor switch according to claim 2, wherein the first, second, third and fourth connections are wire-bonding connections.

4. The bidirectional semiconductor switch according to claim 2, wherein the first, second, third and fourth connections are foil-clip connections.

5. The bidirectional semiconductor switch according to any one of claims 1-4, further comprising a contact plate formed between the at least two reverse blocking semiconductor components and the first and second main terminals.

6. The bidirectional semiconductor switch according to any one of claims 1-4, wherein the semiconductor components are MOS-controlled structures.

7. The bidirectional semiconductor switch according to any one of claims 1-4, wherein the baseplate is inserted into a housing which is encapsulated in plastic, the first and second main terminals and the first and second control terminals being led out of the housing.

8. A bidirectional semiconductor switch comprising:

a baseplate;

a first main terminal formed on the baseplate;

a second main terminal formed on the baseplate;

a first control electrode formed on the baseplate;

a second control electrode formed on the baseplate;

a plurality of reverse blocking semiconductors which can be switched on and off and which are formed of a plurality of doped silicon layers;

wherein a first group of the plurality of reverse blocking semiconductors are formed on the first main terminal to be electrically connected to the first main terminal, and have a first connection to the second main terminal and a second connection to the first control electrode;

wherein a second group of the plurality of reverse blocking semiconductors are formed on the second main terminal to be electrically connected to the second main terminal, and have a third connection to the first main terminal and a fourth connection to the second control electrode.

9. The bidirectional semiconductor switch according to claim 8, wherein the baseplate comprises direct-copper-bonding ceramic.

10. The bidirectional semiconductor switch according to claim 9, wherein the first, second, third and fourth connections are wire-bonding connections.

11. The bidirectional semiconductor switch according to claim 9, wherein the first, second, third and fourth connections are foil-clip connections.

12. The bidirectional semiconductor switch according to claim 8, further comprising a contact plate formed between the plurality of reverse blocking semiconductor components and the first and second main terminals.

13. The bidirectional semiconductor switch according to claim 8, wherein the plurality of semiconductor components are MOS-controlled structures.

14. The bidirectional semiconductor switch according to claim 8, wherein the baseplate is inserted into a housing which is encapsulated in plastic, the first and second main terminals and the first and second control terminals being led out of the housing.