RF test equipment and wire bond interface circuit
First Claim
1. An RF test equipment and wire bond interface circuit, disposed on a dielectric wafer, for facilitating the on-wafer testing of integrated circuits (IC) formed on said dielectric wafer, prior to the IC'"'"'s separation from the wafer, said interface circuit comprising:
- electrical interface means, disposed on the dielectric wafer, for providing electrical coupling between external test equipment and an IC under test; and
a low pass filter structure, disposed on the dielectric wafer, between the electrical interface means and the IC under test, said low pass filter structure having a reactance which simulates a wire bond reactance, thereby providing similar on-wafer and off-wafer performance of the IC.
3 Assignments
0 Petitions
Accused Products
Abstract
An RF test equipment and wire bond interface circuit (150) for facilitating the on-wafer (100) testing of integrated circuits (120) has an electrical interface (102,104,106), for providing electrical coupling to the IC (120) and a low-pass filter structure connected between the electric interface (102,104,106) and the IC (120). The low-pass filter structure comprises a first inductive element (108) connected in series with the electrical interface (102,104,106) for simulating wire bond reactances, a second inductive element (114) connected in series with the first inductive element (108) for making contact with the IC (120) and at least one capacitor (110,112) connected between ground and a point common to both the first (108) and the second (114) inductive elements, for providing shunt capacitance and defining a Tee type low-pass matched filter at the input (121) and the output (123) of the IC (120). The RF test equipment and wire bond interface (150) assure the on-wafer performance of the IC (120) will correspond to its off-wafer performance, despite the addition of wire bonds (127,129 and 133,135).
31 Citations
17 Claims
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1. An RF test equipment and wire bond interface circuit, disposed on a dielectric wafer, for facilitating the on-wafer testing of integrated circuits (IC) formed on said dielectric wafer, prior to the IC'"'"'s separation from the wafer, said interface circuit comprising:
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electrical interface means, disposed on the dielectric wafer, for providing electrical coupling between external test equipment and an IC under test; and a low pass filter structure, disposed on the dielectric wafer, between the electrical interface means and the IC under test, said low pass filter structure having a reactance which simulates a wire bond reactance, thereby providing similar on-wafer and off-wafer performance of the IC. - View Dependent Claims (2, 3, 4, 5)
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6. An RF test equipment and wire bond interface circuit, disposed on a dielectric wafer, for facilitating the on-wafer testing of integrated circuits (ICs) formed on the dielectric wafer, prior to the IC'"'"'s separation from the wafer, said interface circuit comprising:
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electrical interface means, disposed on the wafer, for providing electrical coupling between external test equipment and an IC under test; and a low pass filter structure, disposed on the wafer between the electrical interface means and the IC under test, for providing simulated wire bond reactance, said low pass filter structure comprising; a first inductive element connected in series with the electrical interface means for simulating said wire bond reactance, a second inductive element connected in series with the first inductive element for making contact with the IC under test, and at least one capacitor connected between ground and a point common to both the first and the second inductive elements for providing shunt capacitance, such that when the external test equipment makes contact with the electrical interface means, RF testing with simulated wire bond reactance is provided, thereby assuring similar on-wafer and off-wafer performance of the IC. - View Dependent Claims (7, 8, 9)
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10. An RF test equipment and wire bond interface circuit, disposed on a dielectric wafer, for facilitating the on-wafer testing of integrated circuits (IC) formed on said dielectric wafer, said RF test equipment and wire bond interface circuit comprising:
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an electrical interface means, disposed on a surface of the dielectric wafer, for providing electrical coupling between external test equipment and an IC under test; and a matching circuit, disposed on a surface of the wafer, between the electrical interface means and the IC under test, for providing impedance matching and simulated wire bond reactances, said matching circuit comprising; a first inductive element, connected in series with the electrical interface means, for simulating said wire bond reactances, a second inductive element, connected in series with the first inductive element, for making contact with the IC under test, and at least one electrical wire bond contact, coupled between ground and a point common to both the first and the second inductive elements, for providing wire bond contact and shunt capacitance, such that when the external test equipment makes contact with the electrical interface means, a low-pass filter structure which simulates wire bond reactance is provided during RF testing. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. An RF test equipment and wire bond interface circuit, disposed on a substrate, for facilitating the on-substrate testing of integrated circuits (IC) formed on the substrate, said circuit comprising:
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an electrical interface means, disposed on a surface of the substrate, for providing electrical coupling between external test equipment and an IC under test; and a matching circuit, disposed on a surface of the substrate between the electrical interface means and the IC under test, for providing impedance matching and simulated wire bond reactance, said matching circuit comprising; a first inductive element, connected in series with the electrical interface means, for simulating wire bond reactances, a second inductive element, connected in series with the first inductive element, for making contact with the IC under test, and an electrical wire bond contact, coupled between ground and a point common to both the first and the second inductive elements, for providing shunt capacitance and wire bond contact to external circuitry, such that when the external test equipment makes contact with the electrical interface means, a low-pass filter structure having a first transfer characteristic is provided during RF testing, further;
when the IC under test is removed from the substrate and wire bonds are attached between the electrical wire bond contact and external circuitry, a low-pass filter structure having a second transfer characteristic is provided during IC packaging, wherein said second transfer characteristic is substantially similar to the first transfer characteristic, thereby assuring similar on-wafer and off-wafer performance of the IC.
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Specification