High power ceramic microelectronic package
First Claim
1. A microelectronic package comprising a ceramic substrate having an edge, a first surface bonded to a metal heat sink and a second surface opposite said first surface and having at least one metallized island bonded to a lead frame, wherein said island has a controlled length uniform pullback of metallization from the edge of said substrate, wherein the metallization pullback length is within the range sufficient to reduce residual tensile stress in said substrate compared to a substrate having no controlled length metallization pullback at the substrate surface bonded to a lead frame.
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Accused Products
Abstract
A microelectronic package comprising a ceramic substrate (22) having a first surface bonded to a metal heat sink (25) and a second surface (30) opposite said first surface and having at least one metallized island (32) bonded to a lead frame (26), wherein the island has a uniform pullback (35) of metallization from the edge (36) of the substrate.
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Citations
18 Claims
- 1. A microelectronic package comprising a ceramic substrate having an edge, a first surface bonded to a metal heat sink and a second surface opposite said first surface and having at least one metallized island bonded to a lead frame, wherein said island has a controlled length uniform pullback of metallization from the edge of said substrate, wherein the metallization pullback length is within the range sufficient to reduce residual tensile stress in said substrate compared to a substrate having no controlled length metallization pullback at the substrate surface bonded to a lead frame.
- 13. A ceramic substrate having an edge and at least one metallized surface, said surface containing a metallized die attach area and at least one metallized island electrically isolated from the die attach area, said island having a controlled length uniform pullback of metallization from the edge of the substrate, wherein the metallization pullback length is within the range sufficient to reduce residual tensile stress in said substrate compared to a substrate having no controlled length metallization pullback at the substrate surface bonded to a lead frame.
Specification