Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer

• US 5,312,771 A
• Filed: 04/06/1993
• Issued: 05/17/1994
• Est. Priority Date: 03/24/1990
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Yonehara, Takao
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): Booth, Richard A.
• Application Number:
  US08/044,100
• Time in Patent Office: 406 Days
• Field of Search: 437/173, 437/174, 148/DIG. 4, 148/DIG. 80
• US Class Current: 438/151
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02461 Phosphides
• CPC Class Codes: H01L 21/02463 Arsenides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/02595 polycrystalline
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/2686 using incoherent radiation
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: Y10S 148/004 Annealing, incoherent light

Abstract

An optical annealing method for a semiconductor layer provided on a substrate comprises irradiating a base member provided with a semiconductor layer and an absorbing layer for incoherent light across an insulating layer, with incoherent light followed by patterning the absorbing layer to form a gate electrode.

Claims

1. A method for producing a semiconductor device comprising the steps of:

(i) providing a substrate comprising sequentially a base plate, a semiconductor layer on said base plate, an insulating layer on said semiconductor layer, and a light absorbing layer on said insulating layer;

(ii) irradiating said substrate with incoherent light for annealing said semiconductor layer wherein said base plate and said semiconductor layer comprise a material transmitting said incoherent light and said light absorbing layer comprises a material absorbing said incoherent light and generating thermal energy to indirectly anneal said semiconductor layer;

(iii) subsequent to the step of irradiating, removing a portion of said light absorbing layer, thereby forming a gate electrode comprising the remaining portion of said light absorbing layer, and removing a portion of said insulating layer, thereby forming a gate insulating film comprising the remaining portion of said insulating layer; and

(iv) forming a source region and a drain region.

2. A method according to claim 1, wherein said light absorbing layer is provided on and/or under said semiconductor layer with respect to said substrate.

3. A method according to claim 1, wherein a protective layer is formed on said light absorbing layer.

4. A method according to claim 1, wherein said semiconductor layer comprises a silicon containing semiconductor material.

5. A method according to claim 1, wherein said light absorbing layer comprises a semiconductive or metallic material.

6. A method according to claim 1, which comprises removing a part of said insulating layer by etching.

7. A method according to claim 1, which comprises effecting ion implantation into said semiconductor layer.

8. A method according to claim 1, wherein a part of the remaining portion of said insulating layer is said gate insulating film.