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Thin-film transistor

DC
  • US 5,313,075 A
  • Filed: 04/09/1993
  • Issued: 05/17/1994
  • Est. Priority Date: 05/29/1990
  • Status: Expired due to Term
First Claim
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1. A thin film transistor formed on a substrate comprisinga non-single-crystalline semiconductor film including source and drain regions, and a channel region formed between said source and drain regions, anda gate electrode formed adjacent to said channel region with a gate insulator therebetween,wherein a protective film is formed between said semiconductor film and said substrate for preventing said semiconductor film from being contaminated by an impurity from said substrate and wherein said protective film includes a halogen element.

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