Thermal dissipation of integrated circuits using diamond paths

• US 5,313,094 A
• Filed: 01/28/1992
• Issued: 05/17/1994
• Est. Priority Date: 01/28/1992
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Yuan, Tsoring-Dih, Hsu, Louis L., Kotecki, David E., Beyer, Klaus D., Hsieh, Chang-Ming
• Primary Examiner(s): Jackson, Jerome
• Assistant Examiner(s): Meier, Stephen D.
• Application Number:
  US07/827,195
• Time in Patent Office: 840 Days
• Field of Search: 357/55, 357/81, 357/23.7, 165/185, 257/622, 257/625, 257/77
• US Class Current: 257/622
• CPC Class Codes: H01L 23/3178 Coating or filling in grooves made in the semiconductor body
• CPC Class Codes: H01L 23/3732 Diamonds
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A heat dissipation apparatus for dissipation of thermal energy from an isolated active silicon region to an underlying supportive substrate is disclosed. Such an apparatus comprises a diamond filled trench having walls extending through the isolated active silicon region, an underlying insulative layer, and into the supportive substrate, whereby said diamond filled trench provides a high thermal conductive path from said active silicon region to said substrate.

Claims

1. A silicon-on-insulator heat dissipation apparatus comprising:

a silicon substrate;

an insulation layer disposed on said substrate;

an active semiconductor region disposed on said insulation layer;

a chemical vapor deposited (CVD) diamond filled trench having walls extending from top to bottom through said active semiconductor region, said insulation layer and into said substrate;

a CVD diamond filled cavity positioned below and in contact with the bottom of said CVD diamond filled trench, said CVD diamond filled cavity further having walls extending laterally beyond the diamond filled trench walls into said substrate; and

,

a thin passivation layer on the order of 300 Å

formed on the walls of said trench and said cavity, whereby said diamond filled trench and cavity provide a high thermal conductive path from said active semiconductor region to said substrate.

3. A silicon-on-insulator heat dissipation apparatus according to claims 1 or 2, further comprising an insulative cap disposed on said CVD diamond filled trench.

2. A silicon-on-insulator heat dissipation apparatus comprising:

a silicon substrate;

an insulation layer of insulation material disposed on said substrate;

an active semiconductor region disposed on said insulation layer;

a chemical vapor deposited (CVD) diamond filled trench having walls extending from top to bottom through said active semiconductor region, said insulation layer and into said substrate;

a CVD diamond filled cavity positioned below and in contact with the bottom of said CVD diamond filled trench, said CVD diamond filled cavity further having walls extending laterally beyond the diamond filled trench walls into said substrate; and

,

a thin passivation layer on the order of 300 Å

formed on the walls of said diamond filled trench only at said active semiconductor region, whereby aid diamond filled trench and cavity provide a high thermal conductive path from said active semiconductor region to said substrate.