Optical path length modulator

• US 5,313,535 A
• Filed: 02/27/1992
• Issued: 05/17/1994
• Est. Priority Date: 02/27/1992
• Status: Expired due to Term

• Current Assignee: Verizon Patent and Licensing Incorporated (Verizon Communications Inc.)
• Original Assignee: NYNEX Corp. (Verizon Communications Inc.)
• Inventors: Williams, Gareth F.
• Primary Examiner(s): Lee, John D.
• Assistant Examiner(s): PALMER, PHAN T H
• Application Number:
  US07/842,450
• Time in Patent Office: 810 Days
• Field of Search: 385/14, 385/16, 385/11, 385/1, 385/2, 385/3, 385/8
• US Class Current: 385/14
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02F 1/0134 in optical waveguides

Abstract

An optical integrated circuit comprises an optical substrate and an optical waveguide supported by the substrate. A transducer is incorporated into the optical integrated circuit and coupled to the optical substrate. The transducer comprises a region of piezo-electric material and a set of electrodes for applying a voltage to the piezo-electric material for selectively causing the deformation of the piezo-electric material so as to alter the optical path length of the waveguide.

Claims

1. An optical integrated circuit comprising:

an optical substrate;

an optical waveguide supported by said optical substrate;

a transducer incorporated in said optical integrated circuit and coupled to the optical substrate for selectively controlling a path length of the optical waveguide, said transducer comprising;

a region of piezoelectric material; and

electrode means for applying a voltage to said piezoelectric material to selectively cause the mechanical deformation of the piezoelectric material and the mechanical deformation of the waveguide so as to alter the optical path length of the waveguide by changing the physical length of the waveguide.

2. The optical integrated circuit of claim 1 wherein said optical waveguide forms a ring resonator.

3. The optical integrated circuit of claim 1 wherein said optical waveguide forms a linear resonator.

4. The optical integrated circuit of claim 1 wherein said device comprises first and second coupled waveguides and said transducer introduces a particular optical path length difference between the two waveguides.

5. The optical integrated circuit of claim 1 wherein said optical integrated circuit includes means for sensing the deformation of said piezo-electric material.

6. The optical integrated circuit of claim 1 wherein said optical integrated circuit includes means for relieving stress induced by the deformation of said piezo-electric material.

7. The optical integrated circuit of claim 1 further comprising means for damping mechanical vibrations of the piezo-electric material.

8. The optical integrated circuit of claim 1 wherein said piezo-electric region is incorporated as part of a non-piezo-electric base layer supporting said optical substrate.

9. An optical integrated circuit comprising:

a piezoelectric base layer;

a first electrode layer formed on a first surface of said piezoelectric base layer;

a second electrode layer including a patterned drive electrode formed on a second surface of said piezoelectric base layer;

an optical substrate layer formed on one of said surfaces of the piezoelectric base layer; and

an optical waveguide supported by said optical substrate layer, said drive electrode being patterned so that a voltage applied between the first electrode layer and the drive electrode mechanically deforms said piezoelectric base layer and mechanically deforms said optical substrate layer including said optical waveguide so as to alter the optical path length of the optical waveguide by changing the physical length of the optical waveguide.

10. The optical integrated circuit of claim 9 wherein said optical substrate layer is formed on said second surface of said piezo-electric base layer over said second electrode layer.

11. The integrated optical device of claim 9 wherein said second electrode layer includes said drive electrode and a grounded electrode portion.

12. The optical integrated circuit of claim 11 wherein said optical integrated circuit includes grounding means for grounding said grounded electrode portion comprising a passageway formed through said piezo-electric base layer, and a conductor positioned in said passageway connecting said grounded electrode portion with said first electrode layer.

13. The optical integrated circuit of claim 9 wherein said first surface of said piezo-electric base layer includes a recess formed therein.

14. The optical integrated circuit of claim 9 wherein said optical waveguide is curved so as to avoid regions of greatest compression of said piezo-electric base layer when a voltage is applied between said first electrode layer and said drive electrode.

15. The optical integrated circuit of claim 9 further comprising:

at least one slot formed within said piezo-electric base layer for relieving stress resulting from deformation of said piezo-electric base layer.

16. The optical integrated circuit of claim 15 wherein said at least one slot is formed in said piezo-electric base layer parallel to said optical waveguide.

17. The optical integrated circuit of claim 9 wherein said second surface of said piezo-electric base layer and said optical substrate layer are convex.

18. The optical integrated circuit of claim 9 wherein said waveguide forms a linear resonator.

19. The optical integrated circuit of claim 9 wherein said waveguide has a ring geometry and wherein said patterned electrode overlaps a portion of said ring waveguide for selectively altering the circumferential path length of said ring waveguide.

20. The optical integrated circuit of claim 9 wherein said optical integrated circuit comprises first and second coupled waveguides and first and second patterned electrodes for introducing a predetermined path length difference between the first and second waveguides.

21. The optical integrated circuit of claim 9 further comprising:

a sensing electrode formed on said second surface of said piezo-electric base layer for measuring deformations of the piezo-electric base layer.

22. The optical integrated circuit of claim 9 further comprising:

a piezo-electric sensing layer formed on said first electrode, the first electrode being juxtapositioned between a first surface of said piezo-electric sensing layer and said piezo-electric base layer; and

a sensing electrode formed on a second surface of the piezo-electric sensing layer, wherein a deformation of the piezo-electric base layer deforms the piezo-electric sensing layer to produce a voltage on the sensing electrode.