Automated method for joining wafers

• US 5,314,107 A
• Filed: 12/31/1992
• Issued: 05/24/1994
• Est. Priority Date: 12/31/1992
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Helsel, Sherry L. F., d'Aragona, Frank S., Wells, Raymond C.
• Primary Examiner(s): Rowan, Kurt C.
• Assistant Examiner(s): Elpel, Jeanne M.
• Application Number:
  US07/999,342
• Time in Patent Office: 509 Days
• Field of Search: 228/116, 228/123, 228/903, 228/175, 228/227, 437/925, 414/786, 414/416, 414/404, 414/DIG. 4, 51/283 R
• US Class Current: 228/116
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/68 for positioning, orientation or alignment
• CPC Class Codes: Y10S 414/138 Wafers positioned vertically within cassette

Abstract

A method for joining a number of first and second wafers (11,12) having one polished surface in preparation for direct wafer bonding is provided. The method involves placing a number of first (11) and the same number of second (12) wafers into slots (16) of a retainer (14) so that each of the polished surfaces of the number of first wafers (11) is forced to contact one of the polished surfaces of the number of second wafers (12).

Claims

1. An automated method for joining two silicon wafers in preparation for direct wafer bonding comprising the steps of:

providing a plurality of first wafers having at least one polished surface;

providing a plurality of second wafers having at least one polished surface;

positioning the second set of wafers so that the polished surface of each of the second set of wafers faces 180 degrees from the polished surface of each of the first set of wafers;

interleaving the first and second sets of wafers;

providing a retainer having a plurality of receiving slots for holding the wafers; and

placing the first and second set of wafers in the retainer so that each receiving slot holds one of the first set of wafers and one of the second set of wafers, wherein each of the polished surfaces of the first set of wafers physically contacts the polished surface of one of the second set of wafers to provide a temporarily joined pair of wafers.

2. The method of claim 1 further including aligning an outer periphery of each of the first set of wafers to an outer periphery of one of the second set of wafers before the step of simultaneously placing the first and second wafers in the retainer.

3. The method of claim 1 further comprising the step of permanently joining each temporarily joined pair with a bonding wave by pressing each of the temporarily joined pairs of wafers at one spot.

4. The method of claim 1 wherein each of the first and second sets of wafers are circle shaped and include a flat portion on the periphery, and the method further comprises the step of aligning the flat portion of each of the first set of wafers to the flat portion of each of the second set of wafers before the step of placing the first and second wafers in the retainer.

5. The method of claim 1 wherein each of the polished surfaces are positioned vertically during the step of placing the first and second wafers in the retainer.

6. The method of claim 5 wherein each of the polished surfaces are positioned vertically at all steps of the method for joining two silicon wafers in preparation for direct wafer bonding.

7. An automated method for bringing a first set of wafers into proximity to a second set of wafers in preparation for direct wafer bonding comprising the steps of:

providing a first set of n wafers, each of first set of wafers having a mirror polished surface;

providing a second set of n wafers, each of the second set of wafers having a mirror polished surface;

aligning the first set of n wafers to the second set of n wafers;

bringing the first set of n wafers into close proximity with the second set of n wafers so that the polished surface of each of the first set of n wafers faces and is spaced apart from the polished surfaces of one of the second set of n wafers; and

placing the first and second set of n wafers into a retainer having n receiving slots, wherein each receiving slot holds one of the first set of wafers and one of the second set of wafers.

8. An automated method for joining a number of first and second wafers in preparation for direct wafer bonding comprising the steps of:

providing a number of first wafers having one polished surface;

providing a number of second wafers having one polished surface;

providing a retainer having a number of receiving slots, each of the receiving slots including a first surface and a second surface, wherein the first and second surfaces meet to form an angle at a base of the slot;

placing the number of first and the number of second wafers in the number of receiving slots so that each of the polished surfaces of the number of first wafers is forced to contact one of the polished surfaces of the number of second wafers to form a temporarily joined pair of wafers; and

pressing each of the temporarily joined wafers at one spot to permanently join each of the temporarily joined pair of wafers with a bonding wave.

9. An automated method for joining two semiconductor wafers in preparation for direct wafer bonding comprising the steps of:

providing a plurality of first wafers having at least one polished surface;

providing a plurality of second wafers having at least one polished surface;

providing a retainer having a plurality of receiving slots for holding the first set and the second set of wafers;

placing the first and second wafers into the retainer so that each receiving slot holds a single wafer;

removing the first set of wafers from the retainer;

interleaving the first and second sets of wafers in the retainer so that each receiving slot holds one of the first set of wafers and one of the second set of wafers, wherein the polished surface of each of the first set of wafers physically contacts the polished surface of one of the second set of wafers to provide a temporarily joined pair of wafers; and

pressing each of the temporarily joined wafers at one spot to permanently join each of the temporarily joined pair of wafers with a bonding wave.

10. The method of claim 9 further including aligning an outer periphery of each of the first set of wafers to an outer periphery of one of the second set of wafers before the step of placing the first set of wafers into the retainer.

11. The method of claim 9 wherein each of the first and second sets of wafers are circle shaped and include a flat portion on the periphery, and the method further comprises the step of aligning the flat portion of each of the first set of wafers to the flat portion of the second set of wafers before the step of placing the first set of wafers into the retainer.

12. The method of claim 9 wherein each of the polished surfaces are positioned vertically while being received by the retainer.

13. The method of claim 12 wherein each of the polished surfaces are positioned vertically at all steps of the method for joining two semiconductor wafers in preparation for direct wafer bonding.