Organic optoelectronic devices and methods

• US 5,315,129 A
• Filed: 05/01/1991
• Issued: 05/24/1994
• Est. Priority Date: 08/20/1990
• Status: Expired due to Term

• Current Assignee: University of Southern California
• Original Assignee: University of Southern California
• Inventors: Forrest, Stephen R., So, Franky F.
• Primary Examiner(s): Crane, Sara W.
• Application Number:
  US07/694,108
• Time in Patent Office: 1,119 Days
• Field of Search: 357/8, 257/40, 257/21, 257/184, 257/431, 257/565
• US Class Current: 257/21
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/017 Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
• CPC Class Codes: G02F 2202/02 organic material
• CPC Class Codes: H01L 29/7371 Vertical transistors
• CPC Class Codes: H01L 29/7378 comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
• CPC Class Codes: H10K 10/00 Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers integrated devices or assemblies of multiple devices H10K19/00
• CPC Class Codes: H10K 10/20 Organic diodes
• CPC Class Codes: H10K 10/23 Schottky diodes
• CPC Class Codes: H10K 10/46 Field-effect transistors, e.g. organic thin-film transistors [OTFT] H10K10/43 takes precedence
• CPC Class Codes: H10K 30/211 comprising multiple junctions, e.g. double heterojunctions
• CPC Class Codes: H10K 30/451 comprising a metal-semiconductor-metal [m-s-m] structure
• CPC Class Codes: H10K 85/621 Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Organic optoelectronic devices, such as a modulator (54) and a photodetector (73) comprising alternating layers (58) of two crystalline planar organic aromatic semiconductors (60 and 62), have been grown by organic molecular beam deposition. These organic substances have been deposited in ultra-thin layers only 10 Å in depth using organic molecular beam deposition methods. Due to the anisotropic character of these organic materials,, the devices formed using these methods possess unique electronic and optical properties. The preferred embodiment of the invention utilizes 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and 3,4,7,8-naphthalenetetracarboxylic dianhydride (NTCDA). While the inventors have identified PTCDA and NTCDA as excellent materials for the manufacture of organic optoelectronic IC devices, the broad scope of the present invention encompasses the use of any planar organic aromatic semiconductor which readily forms a crystalline structure. The preferred method of the invention employs a chamber (23) containing an inorganic substrate (32) with appropriate material for making electrical contact to the organic structures and sources of PTCDA (36) and NTCDA (38). The chamber (23) is maintained at a pressure which is generally less than 10.sup. -6 Torr. The substrate (32) is separated from the source materials by a minimum separation distance of 10 cm. The substrate (32) is held below 150K while the PTCDA and NTCDA are alternately heated. The methods described above may also be employed to fabricate an organic phototransistor/photodetector (78).

Claims

1. An optoelectronic device formed by a process comprising the steps of:

(a) providing a chamber (23) having an interior (24);

(b) placing a substrate (32) in said chamber (23);

(c) maintaining said interior (24) of said chamber (23) at a pressure less than about 10^-6 Torr;

(d) placing a first source material (36) in said chamber (23), said first source material (36) being a planar crystalline organic aromatic semiconductor and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof;

(e) placing a second source material (38) in said chamber (23), said second source material (38) being a planar crystalline organic aromatic semiconductor, said second source material (38) having a generally different chemical composition from said first source material (36) and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof;

(f) depositing a layer of said first source material (36) on top of said substrate (32) by heating said first source material (36);

(g) depositing a layer of said second source material (38) on top of said first source material (38) by heating said second source material (38); and

(h) maintaining said substrate (32) at a temperature during deposition sufficient to provide good morphology, sharp interfaces between layers, and single crystalline layers of said first and second materials.

33. The optoelectronic device prepared by the process of claim 1 wherein steps (f) and (g) are alternately repeated a sufficient number of times to provide a multiple quantum well structure.

2. A quasi-epitaxial optoelectronic device comprising:

(a) a substrate (32);

(b) a first layer (60) deposited on top of said substrate (32), said first layer (60) comprising a planar crystalline organic aromatic semiconductor and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof; and

(c) a second layer (62) deposited on top of said first layer (60), said second layer (62) comprising a planar crystalline organic aromatic semiconductor, said second layer (62) having a generally different chemical composition than said first layer (60) and selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, said first (60) and second (62) layers having crystal structures in an ordered relationship with respect to each other.

3. The device as recited in claim 2, in which said substrate (32) comprises a material selected from the group consisting of glass and an inorganic semiconductor.

4. The device as recited in claim 3, in which said substrate (32) comprises an inorganic semiconductor selected from the group consisting of silicon, gallium arsenide, indium phosphide, and cadmium telluride.

5. The device as recited in claim 2, in which said first and second layers are independently selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole, and oxadiazole derivative.

6. The device as recited in claim 5, in which said first layer (60) comprises 3,4,9,10-perylenetetracarboxylic dianhydride and in which said second layer (62) comprises 3,4,7,8-naphthalenetetracarboxylic dianhydride.

34. The device as recited in claim 2 comprising a plurality of alternating layers (58) of said first layer (60) and said second layer (62), said plurality of alternating layers (58) of said first (60) and said second (62) organic aromatic semiconductor materials located on top of said substrate layer (32).

7. An organic multiple quantum well light modulator (54) comrpising:

(a) a substrate layer (56);

(b) a plurality of alternating layers (58) of a first (60) and a second (62) planar crystalline organic aromatic semiconductor material, said second (62) planar crystalline organic aromatic semiconductor material having a generally different chemical composition than said first (60) planar crystalline organic aromatic semiconductor material, said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof;

(c) said plurality of alternating layers (58) of said first (60) and said second (62) planar crystalline organic aromatic semiconductor materials located on top of said substrate layer (56);

(d) an additional layer (64) of said first (60) planar crystalline organic aromatic semiconductor material located on top of said plurality of alternating layers (58);

(e) a cap layer (66) disposed to collect photons (71);

(f) a ground lead (68) connected to said substrate layer (56); and

(g) a voltage lead (70) connected to said cap layer (66).

8. The modulator as recited in claim 7, in which said substrate layer (56) comprises a conductor.

9. The modulator as recited in claim 8, in which said substrate layer (56) comprises gold.

10. The modulator as recited in claim 7, in which said substrate layer (56) comprises an insulator.

11. The modulator as recited in claim 7, in which said cap layer (66) comprises a conductor.

12. The modulator as recited in claim 11, in which said cap layer (66) comprises gold.

13. The modulator as recited in claim 7, in which said cap layer (66) comprises an insulator.

14. The modulator as recited in claim 7, in which said first and second layers are independently selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole, and oxadiazole derivative.

15. The modulator as recited in claim 14, in which said first layer (60) comprises 3,4,9,10-perylenetetracarboxylic dianhydride and in which said second layer (62) comprises 3,4,7,8-naphthalenetetracarboxylic dianhydride.

16. An organic multiple quantum well photodetector (73) comprising:

(a) a substrate layer (74);

(b) a plurality of alternating layers (58) of a first (60) and a second (62) planar crystalline organic aromatic semiconductor materials, said second (62) planar organic aromatic semiconductor material having a generally different chemical composition than said first (60) planar organic aromatic semiconductor material, said plurality of alternating layers (58) of said first (60) and said second (62) organic aromatic semiconductor materials located on top of said substrate layer (74), said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof;

(c) an additional layer (64) of said first (60) planar organic aromatic semiconductor material located on top of said plurality of alternating layers (58);

(d) a cap layer (78) disposed to collect photons (71);

said cap layer (78) being formed from a tin indium oxide (ITO) material;

(e) a ground lead (68) connected to said substrate layer (74); and

(f) a voltage lead (70) connected to said cap layer (78).

17. The photodetector as recited in claim 16, in which said substrate layer (74) comprises a conductor.

18. The photodetector as recited in claim 17, in which said substrate layer (74) comprises gold.

19. The photodetector as recited in claim 16, in which said substrate layer (74) comprises an insulator.

20. The photodetector as recited in claim 16, in which said first and second layers are independently selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole, and oxadiazole derivative.

21. The photodetector as recited in claim 20, in which said first layer (60) comprises 3,4,9,10-perylenetetracarboxylic dianhydride and in which said second layer (62) comprises 3,4,7,8-naphthalenetetracarboxylic dianhydride.

22. A bipolar transistor formed on a substrate (80, 80'"'"') and comprising three layers (84, 86, 88, 84'"'"', 86'"'"', 88'"'"') of semiconductor material, at least one of which layers comprises a planar crystalline organic aromatic semiconductor material selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, with appropriate contacts (82, 90, 82'"'"', 89, 90'"'"') made to at least two layers thereof.

23. The transistor as recited in claim 22, in which said substrate comprises a material selected from the group consisting of glass and inorganic semiconductors.

24. The transistor as recited in claim 23 in which said substrate comprises an inorganic semiconductor material selected from the group consisting of silicon, gallium arsenide, indium phosphide, and cadmium telluride.

25. The transistor as recited in claim 22, in which said planar crystalline organic semiconductor material is selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole, and oxadiazole derivative.

26. The transistor (78) of claim 22 comprising three organic semiconductor layers, with an inner layer (86) comprising a first planar crystalline organic aromatic semiconductor, said one layer sandwiched between two outer layers (84, 88) each comprising a second planar crystalline organic aromatic semiconductor, one of which organic semiconductors conducts holes and the other of which organic semiconductors conducts electrons, said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, with contacts (82, 90) formed to at least said two outer layers.

27. The transistor of claim 26 wherein said substrate comprises a transparent material, wherein one of said outer layers (84) is formed over said substrate, and wherein a transparent conductor (82) is interposed between said substrate and said one of said outer layers.

28. The transistor of claim 26 wherein said hole-conducting semiconductor is selected from the group consisting of 3,4,9,10-perylenetetracarboxylic dianhydride, 3,4,7,8-naphthalenetetracarboxylic dianhydride, copper phthalocyanine, and 3,4,9,10-perylenetetracarboxylic-bis-benzimidazole.

29. The transistor of claim 26 wherein said electron-conducting semiconductor consists essentially of oxadiazole derivative.

30. The transistor of claim 22 comprising a collector layer (84'"'"') of a first conductivity type and a base layer (86'"'"') formed thereon of a second conductivity type, said collector and base layers consisting essentially of an inorganic semiconductor material and further comprising an emitter layer (88'"'"') formed on said base layer, said emitter layer consisting essentially of said first planar crystalline organic aromatic semiconductor, said first and second planar organic semiconductor materials selected from the group of organic compounds consisting of polyacenes and porphyrins and derivatives thereof, with separate contacts (82'"'"', 89, 90'"'"') formed to each semiconductor layer.

31. The transistor of claim 30 wherein said inorganic semiconductor materials comprising said base and collector layers are selected from the group consisting of indium phosphide, gallium arsenide, and silicon.

32. The transistor of claim 22 wherein said organic semiconductor material consists essentially of 3,4,9,10-perylenetetracarboxylic dianhydride.

35. The transistor of claim 26 wherein said outer layers (84, 84'"'"', 88, 88'"'"') constitute an emitter (88, 88'"'"') and a collector (84, 84'"'"') and wherein said inner layer (86, 86'"'"') constitutes a base (86, 86'"'"') and further wherein at least one of said collector (84, 84'"'"') and said base (86, 86'"'"') comprises a plurality of alternating layers (58) of said first (60) and said second (62) planar crystalline organic aromatic semiconductor materials, said second (62) planar crystalline organic aromatic semiconductor material having a generally different chemical composition than said first (60) planar organic aromatic semiconductor material, said plurality of alternating layers (58) of said first (60) and said second (62) organic aromatic semiconductor materials located on top of said substrate layer (80, 80'"'"').