Dry etching with hydrogen bromide or bromine

• US 5,316,616 A
• Filed: 05/27/1993
• Issued: 05/31/1994
• Est. Priority Date: 02/09/1988
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Nakamura, Moritaka, Kurimoto, Takashi, Iizuka, Katsuhiko
• Primary Examiner(s): Jones, W. Gary
• Assistant Examiner(s): BURNS, TODD
• Application Number:
  US08/068,615
• Time in Patent Office: 369 Days
• Field of Search: 156/643, 156/626, 156/658.1, 156/662, 156/646, 204/192.32, 204/192.37
• US Class Current: 438/713
• CPC Class Codes: H01L 21/28114 characterised by the sectional shape, e.g. T, inverted-T
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape

Abstract

Plasma etching with hydrogen bromide or bromine as an etching gas allows a precise control of attaining vertical etching or taper etching with a desired taper angle by controlling a temperature of a mass to be etched, which mass is a phosphorus-doped n-type polycrystalline silicon, phosphorus-doped single crystalline or phosphorus-doped silicides semiconductor wafer.

Claims

1. A process for selectively etching a phosphorus-doped n-type polycrystalline silicon, single crystalline silicon or silicide, comprising:

providing an etching mask over the material to be etched, said material being selected from the group consisting of phosphorus-doped n-type polycrystalline silicon, phosphorus-doped single crystalline silicon and phosphorus-doped silicides, to expose an area of the material to be etched; and

providing a plasma of an etching gas in contact with said area of the material to be etched, said etching gas containing hydrogen bromide, bromine or a combination thereof as a main reactive component that reacts with said material to be etched, whereby said exposed area of said material to be etched is selectively etched to form an etched portion and a side wall along a periphery of said etching mask;

wherein the material to be etched is at a temperature of -40°

C. to +50°

C. during said etching so as to form a side wall having an inclination angle of less than 90°

, and

wherein said etched portion has a width at the surface in contact with the substrate which is larger than the width of the etching mask at the surface in contact with the etched portion, and said side wall is planar.

2. A process according to claim 1, wherein said etching gas contains hydrogen bromide as the reactive component and further contains helium.

3. A process according to claim 1, wherein said inclination angle of said side wall of said etched portion is controlled by the following formula:

##EQU2## where Θ

stands for the inclination angle of the side wall of the etched portion and t stands for the temperature of the mass during etching, the inclination angle Θ

having a dispersion of ±

5°

.

4. A process for selectively etching a layer consisting essentially of silicon-containing material provided on a substrate, comprising the steps of:

(A) providing an etching mask over said layer of silicon-containing material to be etched, said silicon-containing material to be etched being selected from the group consisting of phosphorus-doped n-type polycrystalline silicon, phosphorus-doped single crystalline, silicon and phosphorus-doped silicides, thereby exposing at least one area of said layer, said exposed area being the area not covered by said mask;

(B) providing a plasma of an etching gas in contact with said layer, said etching gas containing as a reactive component at least one gas selected from the group consisting of hydrogen bromide and bromine, whereby said gas reacts with said exposed area of said layer to etch selectively said layer to form an etched portion and a side wall along a periphery of said etching mask, wherein said layer is at a temperature of about -40°

C. to about +50°

C. during said etching step so that said side wall has an inclination of less than 90°

with respect to the surface of the substrate which is in contact with the etched layer of silicon-containing material, wherein said etched portion has a width at the surface in contact with the substrate which is larger than the width of the etching mask at the surface in contact with the etched portion, and said side wall is planar.

5. A process according to claim 4, wherein said etching gas contains only hydrogen bromide, bromine, or a mixture thereof as said reactive component, and further contains an inert gas.

6. A process according to claim 4, wherein said inclination angle is controlled by the following formula:

##EQU3## wherein Θ

represents said inclination angle and t is the temperature of said layer during the etching step, said inclination angle Θ

having a dispersion of ±

5°

C.