Directed effusive beam atomic layer epitaxy system and method
First Claim
1. A method of forming an atomic or molecular layer on a substrate comprising the steps of:
- (a) placing a substrate in an evacuated chamber;
(b) evacuating said chamber to a pressure of less than about 10-9 Torr; and
(c) injecting precursor gases into said chamber, sufficient to react with available sites on said substrate to form a layer on said substrate, into said chamber from a location in said chamber adjacent said substrate to form said atomic or molecular layer at the surface of said substrate while maintaining said pressure in said chamber in regions thereof distant from said substrate.
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Accused Products
Abstract
A system and method for epitaxial growth of high purity materials on an atomic or molecular layer by layer basis wherein a substrate is placed in an evacuated chamber which is evacuated to a pressure of less than about 10-9 Torr and predetermined amounts of predetermined precursor gases are injected into the chamber from a location in the chamber closely adjacent the substrate to form the atomic or molecular layer at the surface of the substrate while maintaining the pressure at less than about 10-9 Torr in the chamber in regions thereof distant from the substrate. The precursor gases are provided from a plurality of tanks containing the precursor gases therein under predetermined pressure and predetermined ones of the tanks are opened to the chamber for predetermined time periods while maintaining the pressure in the tanks. A dose limiting structure is provided for directing predetermined amounts of the precursor gases principally at the substrate with a dose limiting directional structure.
163 Citations
16 Claims
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1. A method of forming an atomic or molecular layer on a substrate comprising the steps of:
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(a) placing a substrate in an evacuated chamber; (b) evacuating said chamber to a pressure of less than about 10-9 Torr; and (c) injecting precursor gases into said chamber, sufficient to react with available sites on said substrate to form a layer on said substrate, into said chamber from a location in said chamber adjacent said substrate to form said atomic or molecular layer at the surface of said substrate while maintaining said pressure in said chamber in regions thereof distant from said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A system for forming an atomic or molecular layer on a substrate comprising:
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(a) an evacuated chamber; (b) an evacuating device coupled to said chamber for evacuating said chamber to a pressure of less than about 10-9 Torr; (c) a reservoir for injecting one or more predetermined precursor gases into said chamber from a location in said chamber closely adjacent said substrate to form said atomic or molecular layer at the surface of said substrate while maintaining said pressure in said chamber in regions thereof distant from said substrate; (d) an orifice coupled to said reservoir for limiting conductance of gases from said reservoir; and (e) a capillary doser coupled to said orifice and extending into said chamber adjacent said substrate for directing said precursor gases principally at said substrate. - View Dependent Claims (14, 15, 16)
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Specification