Method for etching polysilicon film
First Claim
1. A method for etching a polysilicon film formed via an insulating film on the surface of a semiconductor substrate which underwent an impurity diffusion process by a reactive ion etching method that carries out ion etching in a reaction chamber having the atmosphere of an etching gas of a total gas flow, characterized in that said etching gas contains at least hydrogen bromide argon, and argon.
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Accused Products
Abstract
In etching a polysilicon film having a large step difference by means of the RIE method, use is made of a mixed gas of HBr and Ar (10 to 25%) or a mixed gas of HBr, Ar (5 to 25 %), and O2 (0.2 to 2%). With this arrangement, it is possible to eliminate the residuals in the step part, and etch the polysilicon film with high anisotropy with little etching of the underlying oxide film.
20 Citations
2 Claims
- 1. A method for etching a polysilicon film formed via an insulating film on the surface of a semiconductor substrate which underwent an impurity diffusion process by a reactive ion etching method that carries out ion etching in a reaction chamber having the atmosphere of an etching gas of a total gas flow, characterized in that said etching gas contains at least hydrogen bromide argon, and argon.
Specification
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- Resources
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Current AssigneeNEC Electronics Corporation (Renesas Electronics Corporation)
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Original AssigneeNEC Corporation
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InventorsOikawa, Kirokazu
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Primary Examiner(s)Hearn, Brian E.
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Assistant Examiner(s)HOLTZMAN, LAURA
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Application NumberUS07/865,034Time in Patent Office791 DaysField of Search156/643, 156/662, 437/233US Class Current438/720CPC Class CodesH01L 21/32137 of silicon-containing layers
