Multi-quantum barrier laser

• US 5,319,660 A
• Filed: 05/29/1992
• Issued: 06/07/1994
• Est. Priority Date: 05/29/1992
• Status: Expired due to Fees

• Current Assignee: Curators of the University of Missouri (University of Missouri)
• Original Assignee: Mcdonnell Douglas Corporation (The Boeing Co.)
• Inventors: Serreze, Harvey B., Chen, Ying C.
• Primary Examiner(s): Epps, Georgia Y.
• Application Number:
  US07/890,167
• Time in Patent Office: 739 Days
• Field of Search: 372/45, 372/43, 257/14, 257/15, 257/17, 257/18
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/2013 MQW barrier reflection layers
• CPC Class Codes: H01S 5/34 comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers H01S5/36 takes precedence
• CPC Class Codes: H01S 5/3409 special GRINSCH structures
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser

Abstract

A semiconductor laser device which provides enhanced carrier confinement. This device utilizes a single or multi-quantum well structure located between graded index confinement layers which are in turn between a pair of cladding layers. Semiconductor layers are selected such that the quantum well active region and confinement layers form a PN junction by being located between layers having N-type dopants on one side and P-type dopants on the second side for proper diode response. Within each confinement layer there is formed a plurality of multi-quantum barrier layers which serve to further increase the carrier confinement within the quantum well region by increasing the effective potential barrier within the graded index confinement region. The multi-quantum barrier layers are comprised of layers of the material forming the graded index confinement layers having alternating large and small concentrations of the material whose percentage is being varied in the graded index confinement layers.

Claims

1. A semiconductor laser, comprising:

(a) a semiconductor substrate; and

(b) a plurality of semiconductor layers, positioned upon said semiconductor substrate, comprising;

(1) a quantum well region for propagating optical signals along an axis of propagation, said quantum well region having a PN junction proximate thereto;

(2) a first graded index layer having a graded index of refraction disposed adjacent a first side of said quantum well region, said graded index of refraction being largest at the interface of said first graded index layer and said quantum well region and decreasing in a direction away from said quantum well region;

(3) a second graded index layer having a graded index of refraction disposed adjacent a second side of said quantum well region, said graded index of refraction being largest at the interface of said second graded index layer and said quantum well region and decreasing in a direction away from said quantum well region;

(4) a plurality of first quantum barrier layers positioned within said first graded index layer having alternating large and small bandgaps whereby each layer having a large bandgap is disposed adjacent a layer having a small bandgap; and

(5) a plurality of second quantum barrier layers positioned within said second graded index layer having alternating large and small bandgaps whereby each layer having a large bandgap is disposed adjacent a layer having a small bandgap.

2. A semiconductor laser as recited in claim 1 wherein each of said plurality of first quantum barrier layers and each of said plurality of second quantum barrier layers have a thickness approximately equal to λ

/4, where λ

is the predominant wavelength of the electrons propagated within the quantum well region.

3. A semiconductor laser as recited in claim 1 wherein each of said plurality of first quantum barrier layers and each of said plurality of second quantum barrier layers have a thickness within a range from (0.8λ

)/4 to (1.2λ

)/4, wherein λ

is the predominant wavelength of the electrons propagated within the quantum well region.

4. A semiconductor laser as recited in claim 1 wherein said plurality of first quantum barrier layers and said plurality of second quantum barrier layers are each comprised of strained layers having alternating compressive and tensile strain imposed thereupon whereby each layer under compressive strain is disposed adjacent a layer under tensile strain.

5. A semiconductor laser as recited in claim 1 wherein said semiconductor layers are selected from the group consisting of alloys of (Al_x Ga_1-x)₀.5 In₀.5 P and Al_x Ga_1-x As.

6. A semiconductor laser as recited in claim 1 wherein said plurality of first quantum barrier layers are positioned substantially in the center of said first graded index layer and wherein said plurality of second quantum barrier layers are positioned substantially in the center of said second graded index layers.

7. A semiconductor laser, comprising:

(a) a semiconductor substrate comprised of GaAs; and

(b) a plurality of semiconductor layers, positioned upon said semiconductor substrate, comprising;

(1) a quantum well region comprised of (Al_x Ga_1-x)_y In_1-y P for propagating optical signals along an axis of propagation wherein x and y each have values selected from the range of 0 to 1, said quantum well region having a PN junction proximate thereto;

(2) a first graded index layer having a graded index of refraction disposed adjacent a first side of said quantum well region, said graded index of refraction layer being comprised of (Al_x Ga_1-x)₀.5 In₀.5 P wherein x increases from a minimum value at the interface of said quantum well region and said first graded index layer to a maximum value, said increase occurring in a direction away from said quantum well region;

(3) a second graded index layer having a graded index of refraction disposed adjacent a second side of said quantum well region, said graded index of refraction layer being comprised of (Al_x Ga_1-x)₀.5 In₀.5 P wherein x increases from a minimum value at the interface of said quantum well region and said second graded index layer to a maximum value, said increase occurring in a direction away from said quantum well region;

(4) a plurality of first quantum barrier layers comprised of (Al_x Ga_1-x)₀.5 In₀.5 P positioned within said first graded index layer having alternating large and small bandgaps whereby each layer having a large bandgap is disposed adjacent a layer having a small bandgap; and

(5) a plurality of second quantum barrier layers comprised of (Al_x Ga_1-x)₀.5 In₀.5 P positioned within said second graded index layer having alternating large and small bandgaps whereby each layer having a large bandgap is disposed adjacent a layer having a small bandgap.

8. A semiconductor laser as recited in claim 7 wherein said plurality of first quantum barrier layers and said plurality of second quantum barrier layers are each comprised of alternating layers of (Al_x Ga_1-x)₀.5 In₀.5 P wherein the value of x is equal to the maximum value of x in said first graded index layer and (Al_x Ga_1-x)₀.5 In₀.5 P wherein the value of x is equal to the minimum value of x in the first graded index layer.

9. A semiconductor laser as recited in claim 8 wherein said maximum value of x is 0.8 and said minimum value of x is 0.2.

10. A semiconductor laser, comprising:

(a) a semiconductor substrate; and

(b) a plurality of semiconductor layers, positioned upon said semiconductor substrate, comprising;

(1) a quantum well region for propagating optical signals along an axis of propagation, said quantum well region having a PN junction proximate thereto;

(2) a first graded index layer having a graded index of refraction disposed adjacent a first side of said quantum well region, said graded index of refraction being largest at the interface of said first graded index layer and said quantum well region and decreasing in a direction away from said quantum well region;

(3) a second graded index layer having a graded index of refraction disposed adjacent a second side of said quantum well region, said graded index of refraction being largest at the interface of said second graded index layer and said quantum well region and decreasing in a direction away from said quantum well region;

(4) a first cladding layer disposed adjacent said first graded index layer for further confining said optical signals;

(5) a second cladding layer disposed adjacent said second graded index layer for further confining said optical signals;

(6) a plurality of first quantum barrier layers positioned within said first cladding layer having alternating large and small bandgaps whereby each layer having a large bandgap is disposed adjacent a layer having a small bandgap; and

(7) a plurality of second quantum barrier layers positioned within said second cladding layer having alternating large and small bandgaps whereby each layer having a large bandgap is disposed adjacent a layer having a small bandgap.

11. A semiconductor laser as recited in claim 10 wherein each of said plurality of first quantum barrier layers and each of said plurality of second quantum barrier layers have a thickness approximately equal to λ

/4, wherein λ

is the predominant wavelength of the electrons propagated within the quantum well region.

12. A semiconductor laser as recited in claim 10 wherein each of said plurality of first quantum barrier layers and each of said plurality of second quantum barrier layers have a thickness within a range from (0.8λ

)/4 to to (1.2λ

)/4, wherein λ

is the predominant wavelength of the electrons propagated within the quantum well region.

13. A semiconductor laser as recited in claim 10 wherein said plurality of first quantum barrier layers and said plurality of second quantum barrier layers are each comprised of strained layers having alternating compressive and tensile strain imposed thereupon whereby each layer under compressive strain is disposed adjacent a layer under tensile strain.

14. A semiconductor laser as recited in claim 10 wherein said semiconductor layers are selected from the group consisting of alloys of (Al_x Ga_1-x)₀.5 In₀.5 P and Al_x Ga_1-x As.