Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution

• US 5,320,709 A
• Filed: 02/24/1993
• Issued: 06/14/1994
• Est. Priority Date: 02/24/1993
• Status: Expired due to Term

• Current Assignee: Advanced Technology Materials, Inc. (Entegris Incorporated)
• Original Assignee: Advanced Chemical Systems International, Inc. (Entegris Incorporated)
• Inventors: Bowden, Bill, Switalski, Debbie
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US08/021,799
• Time in Patent Office: 475 Days
• Field of Search: 156/667, 156/664, 156/665, 156/666, 156/662, 156/652, 156/653, 252/79.3, 252/79.4, 252/79.2, 252/79.1
• US Class Current: 438/745
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers

Abstract

A method for selectively removing oxidized organometallic residues, oxidized organosilicon residues, native oxides, and damaged oxides created in plasma-etching through emersion of plasma-etched silicon wafers in a solution of anhydrous ammonium fluoride and a polyhydric alcohol, which is substantially free of hydrogen fluoride and water.

Claims

1. A method for selectively removing organometallic residues, organosilicon residues, native silicon oxides, or damaged silicon oxides created in processing a semiconductor substrate from said semiconductor substrate, comprising contacting said semiconductor substrate with an etching solution for a time sufficient to remove said organometallic residues, organosilicon residues, native silicon oxides, or damaged silicon oxides from said semiconductor substrate, wherein

(a) said etching solution comprises an anhydrous ammonium fluoride salt dissolved in a polyhydric alcohol, said anhydrous ammonium fluoride salt selected from the group consisting of anhydrous ammonium fluoride and anhydrous ammonium bifluoride and mixtures thereof, and

(b) said etching solution contains less than about 4% by weight water and is free of added hydrogen fluoride.

2. The method of claim 1, wherein the polyhydric alcohol is selected from the group consisting of ethylene glycol, glycerol, propylene glycol, polyethylene glycol, polymethylene glycol, and mixtures thereof.

3. The method of claim 1, wherein the polyhydric alcohol is ethylene glycol

4. The method of claim 1, wherein said etching solution comprises from 0.5% to 10% by weight anhydrous ammonium salt and from 90% to 99.5% by weight polyhydric alcohol.

5. The method of claim 4, wherein said etching solution contains less than 0.5% by weight water.

6. The method of claim 1, wherein the anhydrous ammonium salt is anhydrous ammonium fluoride.

7. The method of claim 6, wherein the polyhydric alcohol is selected from the group consisting of ethylene glycol, glycerol, propylene glycol, polyethylene glycol, polymethylene glycol, and mixtures thereof.

8. The method of claim 7, wherein the polyhydric alcohol is ethylene glycol.

9. The method of claim 6, wherein said etching solution comprises from 0.5% to 10% by weight anhydrous ammonium fluoride and from 90% to 99.5% by weight polyhydric alcohol

10. The method of claim 9, Wherein said etching solution contains less than 0.5% by weight water.