Method of providing a silicon film having a roughened outer surface
First Claim
1. A method of providing a silicon film having a roughened outer surface atop a semiconductor wafer, the method comprising the following steps:
- placing the semiconductor wafer having a surface into a plasma enhanced RF powered chemical vapor deposition reactor; and
plasma enhanced chemical vapor depositing a layer of silicon over the wafer surface by providing quantities of a silicon source gas, a carrier gas, and TiCl4 to the reactor, an atomic ratio of the quantities of the silicon source gas and the TiCl4 being greater than or equal to 4 at the wafer surface; and
by maintaining the reactor at an RF power, a pressure and a temperature;
the RF power being supplied at a frequency of at least 5 MHz, the quantities of the silicon source gas, the RF power, the temperature and the pressure being effective to produce a predominately silicon film having the outer surface, the quantity of the TiCl4 being ineffective to produce a predominately titanium silicide film.
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Accused Products
Abstract
A method of providing a silicon film having a roughened outer surface atop a semiconductor wafer comprises: a) placing a semiconductor wafer into a plasma enhanced RF powered chemical vapor deposition reactor; and b) plasma enhanced chemical vapor depositing a layer of silicon over the wafer surface by providing quantities of a silicon source gas, a carrier gas, and TiCl4 to the reactor, the atomic ratio of the quantities of silicon source gas and TiCl4 being greater than or equal to 4 at the wafer surface; and by maintaining the reactor at a selected RF power, pressure and temperature; the RF power being supplied at a frequency of at least 5 MHz and preferably at least 10 MHz, the quantities of silicon source gas, RF power, temperature and pressure being effective to produce a predominately silicon film having an outer surface, the quantity of TiCl4 being effective to induce roughness into the outer silicon surface as compared to an outer silicon surface prepared under identical conditions but for introduction of TiCl4 but ineffective to produce a predominately titanium silicide film.
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Citations
31 Claims
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1. A method of providing a silicon film having a roughened outer surface atop a semiconductor wafer, the method comprising the following steps:
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placing the semiconductor wafer having a surface into a plasma enhanced RF powered chemical vapor deposition reactor; and plasma enhanced chemical vapor depositing a layer of silicon over the wafer surface by providing quantities of a silicon source gas, a carrier gas, and TiCl4 to the reactor, an atomic ratio of the quantities of the silicon source gas and the TiCl4 being greater than or equal to 4 at the wafer surface; and
by maintaining the reactor at an RF power, a pressure and a temperature;
the RF power being supplied at a frequency of at least 5 MHz, the quantities of the silicon source gas, the RF power, the temperature and the pressure being effective to produce a predominately silicon film having the outer surface, the quantity of the TiCl4 being ineffective to produce a predominately titanium silicide film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of providing a polysilicon film having a roughened outer surface atop a semiconductor wafer, the method comprising the following steps:
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placing the semiconductor wafer having a surface into a plasma enhanced RF powered chemical vapor deposition reactor; plasma enhanced chemical vapor depositing a layer of amorphous silicon over the wafer surface by providing quantities of a silicon source gas, a carrier gas, and TiCl4 to the reactor, an atomic ratio of the quantities of the silicon source gas and the TiCl4 being greater than or equal to 4 at the wafer surface; and
by maintaining the reactor at an RF power, a pressure and a temperature;
the RF power being supplied at a frequency of at least 5 MHz, the quantities of the silicon source gas, the RF power, the temperature and the pressure being effective to produce a predominately amorphous silicon film having the outer surface, the quantity of the TiCl4 being ineffective to produce a predominately titanium silicide film; andannealing the wafer to render the amorphous silicon polycrystalline. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of providing a silicon film having a roughened outer surface atop a semiconductor wafer, the method comprising the following sequential steps:
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placing the semiconductor wafer having a surface into a plasma enhanced RF powered chemical vapor deposition reactor; plasma enhanced chemical vapor depositing a first layer of silicon over the wafer surface by feeding quantities of a silicon source gas, a carrier gas, and TiCl4 to the reactor, an atomic ratio of the quantities of the silicon source gas and the TiCl4 being greater than or equal to 4 at the wafer surface; and
by maintaining the reactor at an RF power, a pressure and a temperature;
the RF power being supplied at a frequency of at least 5 MHz, the quantities of the silicon source gas, the RF power, the temperature and the pressure being effective to produce a first predominately silicon film having a first outer surface, the quantity of the TiCl4 being effective to induce roughness into the first outer silicon surface as compared to an outer silicon surface prepared under identical conditions but for introduction of the TiCl4 but the quantity of the TiCl4 being ineffective to produce a predominately titanium silicide film; andceasing to feed the TiCl4 to the reactor while continuing to the silicon source gas to the reactor, and maintaining the RF power, the pressure and the temperature at quantities effective to deposit a second layer of silicon atop the first outer surface of the first layer of silicon, the second layer of silicon having a second outer surface, the first outer surface at least in part inducing roughness into the second outer surface. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of providing a polysilicon film having a roughened outer surface atop a semiconductor wafer, the method comprising the following sequential steps:
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placing the semiconductor wafer having a surface into a plasma enhanced RF powered chemical vapor deposition reactor; plasma enhanced chemical vapor depositing a first layer of amorphous silicon over the wafer surface by feeding quantities of a silicon source gas, a carrier gas, and TiCl4 to the reactor, an atomic ratio of the quantities of the silicon source gas and the TiCl4 being greater than or equal to 4 at the wafer surface; and
by maintaining the reactor at an RF power, a pressure and a temperature;
the RF power being supplied at a frequency of at least 5 MHz, the quantities of the silicon source gas, the RF power, the temperature and the pressure being effective to produce a first predominately amorphous silicon film having a first outer surface, the quantity of the TiCl4 being effective to induce roughness into the first outer amorphous silicon surface as compared to an outer amorphous silicon surface prepared under identical conditions but for introduction of the TiCl4 but the quantity of the TiCl4 being ineffective to produce a predominately titanium silicide film;ceasing to feed the TiCl4 to the reactor while continuing to feed the silicon source gas to the reactor, and maintaining the RF power, the pressure and the temperature at quantities effective to deposit a second layer of silicon atop the first outer surface of the first layer of silicon, the second layer of silicon having a second outer surface, the first amorphous outer surface at least in part inducing roughness into the second outer surface; and annealing the wafer to render the first amorphous film polycrystalline. - View Dependent Claims (26, 27, 28, 29, 30, 31)
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Specification