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Method of providing a silicon film having a roughened outer surface

  • US 5,320,880 A
  • Filed: 11/18/1993
  • Issued: 06/14/1994
  • Est. Priority Date: 10/20/1992
  • Status: Expired due to Term
First Claim
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1. A method of providing a silicon film having a roughened outer surface atop a semiconductor wafer, the method comprising the following steps:

  • placing the semiconductor wafer having a surface into a plasma enhanced RF powered chemical vapor deposition reactor; and

    plasma enhanced chemical vapor depositing a layer of silicon over the wafer surface by providing quantities of a silicon source gas, a carrier gas, and TiCl4 to the reactor, an atomic ratio of the quantities of the silicon source gas and the TiCl4 being greater than or equal to 4 at the wafer surface; and

    by maintaining the reactor at an RF power, a pressure and a temperature;

    the RF power being supplied at a frequency of at least 5 MHz, the quantities of the silicon source gas, the RF power, the temperature and the pressure being effective to produce a predominately silicon film having the outer surface, the quantity of the TiCl4 being ineffective to produce a predominately titanium silicide film.

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