Plasma-process system with improved end-point detecting scheme

• US 5,322,590 A
• Filed: 08/16/1993
• Issued: 06/21/1994
• Est. Priority Date: 03/24/1991
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Koshimizu, Chishio
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/107,027
• Time in Patent Office: 309 Days
• Field of Search: 156/626, 156/627, 156/643, 156/646, 156/657, 156/662, 156/345, 204/192.32, 204/192.33, 204/192.37, 204/298.32, 356/319, 356/320, 356/326, 356/437
• US Class Current: 438/9
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: Y10S 156/916 Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Abstract

In one aspect of the invention, CHF₃ gas and CF₄ gas (i.e., reactant gases), and argon gas (i.e., plasma-stabilizing gas) are introduced into a vacuum chamber. RF power is then applied between the electrodes within the chamber, thereby generating plasma. The plasma is applied to a substrate placed in the chamber, thus etching the SiO₂ film formed on the substrate. A spectrometer extracts a light beam of a desired wave-length, emitted from the CF₂ radical which contributes to the etching. An end-point detecting section monitors the luminous intensity of the CF₂ radical reacting with SiO₂ during the etching. Once the SiO₂ film has been etched away, the luminous intensity of the CF₂ radical increases. Upon detecting this increase, the section determines that etching has just ended. The selected wavelength ranges from 310 nm to 236 nm, preferably being 219.0 nm, 230.0 nm, 211.2 nm, 232.5 nm, or any one ranging from 224 nm to 229 nm. In another aspect of the invention, the device attached to the observation window of the chamber removes products stuck to the window during the etching. The window thus cleaned, more light than otherwise passes through the window and reaches the spectrometer. This enables the section to detect even a slight change in the luminous intensity of the CF₂ radical, thereby detecting the end point of etching with accuracy.

Claims

1. A plasma-process method comprising the steps of:

placing an object at a predetermined position within a reaction chamber in which to generate plasma, said object having a silicon dioxide film formed on at least a part of a surface thereof;

conducting a CF-based gas used as reactant gas and a predetermined additional gas into said reaction chamber;

generating plasma in said reaction chamber, thereby to perform etching the silicon dioxide film formed on the object;

monitoring luminous intensity of active species present in the CF-based gas, which contributes to the etching and

detecting an end point of the etching from a monitored luminous intensity of the active species, without influence of influence of an emission spectrum of the additional gas.

2. The method according to claim 1, wherein said CF-based gas includes at least one of CHF₃ and CF₄, and said active species includes at least one of CF₂ radical, CF ion, CF radical and CF₃ radical.

3. The method according to claim 1, wherein said additional gas includes argon gas.

4. The method according to claim 1, further comprising the steps of:

monitoring luminous intensity of a reaction product formed in the plasma during the etching; and

calculating a ratio of the luminous intensity the active species present in the CF-based gas and contributing to the etching, and the luminous intensity of the reaction product,

wherein the end point of the etching is detected from variation of the luminous intensity ratio thus calculated.

5. The method according to claim 4, wherein said CF-based gas includes CF₂ gas, and said reaction product includes CO gas.

6. The method according to claim 4, further comprising the step of:

calculating a transformation coefficient for coinciding curves representing changes in the luminous intensities of the active species and the reaction product,

wherein said luminous intensity ratio is calculated on the basis of the transformation coefficient.

7. The method according to claim 6, further comprising the step of controlling an over-etching time in accordance with the luminous-intensity ratio, after the end point of the etching has been detected on the basis of changes in the luminous intensity ratio.

8. A plasma-process method comprising the steps of:

placing an object at a predetermined position within a reaction chamber in which to generate plasma, said object having a silicon dioxide film formed on at least a part of a surface thereof;

conducting a CF-based gas used as reactant gas and a predetermined additional gas into said reaction chamber;

generating plasma in said reaction chamber, thereby to perform etching the silicon dioxide film formed on the object;

monitoring an intensity of a light beam emitted from the plasma and having a desired wavelength which falls within a range of 210 to 236 nm; and

detecting an end point of the etching from a monitored intensity of the light beam having the desired wavelength, without influence of influence of an emission spectrum of the additional gas.

9. The method according to claim 8, wherein said desired wavelength is at least one of 219.0 nm, 230.0 nm, 211.2 nm, 232.5 nm and any wavelength ranging from 224 to 229 nm.

10. The method according to claim 8, wherein said CF-based gas includes at least one of CHF₃ and CF₄.

11. The method according to claim 8, wherein said additional gas includes argon gas.

12. A plasma-process method comprising the steps of:

placing an object at a predetermined position within a reaction chamber in which to generate plasma, said object having a silicon dioxide film formed on at least a part of a surface thereof;

conducting a CF-based gas used as reactant gas into said reaction chamber;

generating plasma in said reaction chamber, thereby to perform etching the silicon dioxide film formed on the object;

monitoring luminous intensity of active species present in the CF-based gas, which contributes to the etching; and

detecting an end point of the etching from a monitored luminous intensity of the active species.

13. The method according to claim 12, wherein said CF-based gas includes at least one of CHF₃ and CF₄, and said active species includes at least one of CF₂ radical, CF ion, CF radical and CF₃ radical.

14. The method according to claim 12, further comprising the steps of:

monitoring luminous intensity of a reaction product formed in the plasma during the etching; and

calculating a ratio of the luminous intensity of the active species present in the CF-based gas and contributing to the etching, and the luminous intensity of the reaction product,

wherein the end point of the etching is detected from variation of the luminous intensity ratio thus calculated.

15. The method according to claim 12, wherein said CF-based gas includes CF₂ gas, and said reaction product includes CO gas.

16. The method according to claim 12, further comprising the step of:

calculating a transformation coefficient for coinciding curves representing changes in the luminous intensities of the active species and the reaction product,

wherein said luminous intensity ratio is calculated on the basis of the transformation coefficient.

17. The method according to claim 16, further comprising the step of controlling an over-etching time in accordance with the luminous-intensity ratio, after the end point of the etching has been detected on the basis of changes in the luminous intensity ratio.

18. A plasma-process method comprising the steps of:

placing an object at a predetermined position within a reaction chamber in which to generate plasma, said object having a silicon dioxide film formed on at least a part of a surface thereof;

conducting a CF-based gas used as a reactant gas into said reaction chamber;

generating plasma in said reaction chamber, thereby to perform etching the silicon dioxide film formed on the object;

monitoring an intensity of a light beam emitted from the plasma and having a desired wavelength which falls within a range of 210 to 236 nm; and

detecting an end point of the etching from a monitored intensity of the light beam having the desired wavelength.

19. The method according to claim 18, wherein said desired wavelength is at least one of 219.0 nm, 230.0 nm, 211.2 nm, 232.5 nm and any wavelength ranging from 224 to 229 nm.

20. The method according to claim 18, wherein said CF-based gas includes at least one of CHF₃ and CF₄.