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Silicon carbide field effect device

  • US 5,323,040 A
  • Filed: 09/27/1993
  • Issued: 06/21/1994
  • Est. Priority Date: 09/27/1993
  • Status: Expired due to Term
First Claim
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1. A silicon carbide field effect transistor comprising:

  • a silicon carbide substrate having first and second opposing faces;

    a silicon carbide drain region of first conductivity type in said silicon carbide substrate, extending to said first face;

    a silicon carbide drift region of first conductivity type on said silicon carbide drain region opposite said first face, said silicon carbide drift region having a first conductivity type dopant concentration below that of said silicon carbide drain region;

    a silicon carbide channel region of first conductivity type on said silicon carbide drift region opposite said silicon carbide drain region, said silicon carbide channel region having a first conductivity type dopant concentration below that of said silicon carbide drift region;

    a silicon carbide source region of first conductivity type on said silicon carbide channel region, said silicon carbide source region extending to said second face and having a first conductivity type dopant concentration above that of said silicon carbide channel region;

    a first trench in said silicon carbide substrate at said second face, said first trench having a sidewall extending between said silicon carbide drift region and said silicon carbide source region; and

    a second trench in said silicon carbide substrate at said second face, adjacent said first trench, said second trench having a sidewall extending between said silicon carbide drift region and said silicon carbide source region to thereby define a mesa of first conductivity type in said silicon carbide channel region and said silicon carbide source region, between said first trench and said second trench.

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