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Multi-layer type semiconductor device with semiconductor element layers stacked in opposite direction and manufacturing method thereof

  • US 5,324,980 A
  • Filed: 08/07/1992
  • Issued: 06/28/1994
  • Est. Priority Date: 09/22/1989
  • Status: Expired due to Term
First Claim
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1. A multi-layer type semiconductor device, comprising:

  • a substrate having a main surface;

    a first semiconductor element layer formed on said main surface of said substrate and including a first semiconductor element having an active layer portion, a gate portion and a gate insulating film portion vertically therebetween;

    an insulating layer formed on the active layer portion of said first semiconductor layer; and

    a second semiconductor element layer formed on said insulating layer and including a second semiconductor element having an active layer portion adjacent said insulating layer, a gate portion and a gate insulating film portion therebetween;

    the first and second elements being oriented in vertical alignment to each other and back-to-back on said first and second semiconductor element layers.

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