Bonded type piezoelectric apparatus, method for manufacturing the same and bonded type piezoelectric element

• US 5,325,012 A
• Filed: 02/20/1992
• Issued: 06/28/1994
• Est. Priority Date: 09/19/1989
• Status: Expired due to Term

• Current Assignee: Hitachi Engineering & Services Company Limited (Hitachi, Ltd.), Hitachi, Ltd., Hitachi Material Engineering Limited
• Original Assignee: Hitachi Engineering & Services Company Limited (Hitachi, Ltd.), Hitachi, Ltd., Hitachi Material Engineering Limited
• Inventors: Yoneyama, Takao, Kokura, Satoshi, Sato, Ichiya, Yanagibashi, Minoru, Okamura, Hisanori
• Primary Examiner(s): Dougherty, Thomas M.
• Application Number:
  US07/837,977
• Time in Patent Office: 859 Days
• Field of Search: 310/346, 310/364
• US Class Current: 310/364
• CPC Class Codes: H10N 30/06 Forming electrodes or interconnections, e.g. leads or terminals
• CPC Class Codes: H10N 30/073 by fusion of metals or by adhesives

Abstract

The features of the present invention are 1) to apply metallization on the bonding surface of a piezoelectric ceramic with a metal likely to react with the piezoelectric ceramic material, 2) when the piezoelectric ceramic material is soldered on the bonding surface, to apply metallization with a metal likely to react with the solder material, 3) to provide between the metallizing layers formed in 1) and 2) a metallizing layer including metal which prevents reaction between the metals and their diffusion, 4) to use a mounting member for the piezoelectric ceramic which has substantially the same thermal expansion coefficient as the piezoelectric ceramic in non-polarization condition and 5) to solder in the non-polarization condition and thereafter to polarize. As the result, a bonded type piezoelectric apparatus with a high reliability or with a broad application temperature range near from the absolute zero temperature to the Curie point of the piezoelectric element, and a method of manufacturing the same are provided.

Claims

1. A bonded type piezoelectric apparatus, comprising:

a piezoelectric ceramic material having at least one planar surface;

an active layer of metal selected from the group consisting of Zr, Nb, Mo, Hf, Ta and W provided directly on said at least one planar surface;

a securing member to which said piezoelectric ceramic material is bonded via a bonding layer provided between said active layer and said securing member; and

a solder layer having a high fusibility with said bonding layer provided between said active layer and said bonding layer.

2. A bonded type piezoelectric apparatus according to claim 1, wherein said solder layer is made of a material selected from the group consisting of gold and silver.

3. A bonded type piezoelectric apparatus, comprising:

a piezoelectric ceramic material having at least one planar surface;

an active layer of metal selected from the group consisting of Zr, Nb, Mo, Hf, Ta and W provided directly on said at least one planar surface;

a securing member to which said piezoelectric ceramic material is bonded via a bonding layer provided between said active layer and said securing member;

a solder layer having a high fusibility with said bonding layer provided between said active layer and said bonding layer; and

a barrier layer provided between said active layer and said solder layer, said barrier layer preventing diffusion of the metals in said active layer and said solder layer.

4. A bonded type piezoelectric apparatus according to claim 3, wherein said barrier layer is made of a material selected from the group consisting of Pt, Ni and Cr.

5. A bonded type piezoelectric apparatus, comprising:

a piezoelectric ceramic material having at least one planar surface;

an active layer of a metal having a high fusibility with said piezoelectric ceramic material provided directly on said at least one planar surface;

a solder layer provided on said active layer;

a securing member to which said piezoelectric ceramic material is bonded via a bonding layer made of a metallic solder material provided between said solder layer and said securing member, wherein said securing member is made of a material having a thermal expansion coefficient substantially the same as that of said piezoelectric ceramic material when said piezoelectric ceramic material is in a non-polarization condition;

wherein said solder layer is made of a metal having a high fusibility with said bonding layer and wherein said securing member is a metal mounting plate or an insulating ceramic securing member.

6. A bonded type piezoelectric apparatus according to claim 5, wherein said securing member is made of a material having a thermal expansion coefficient less than 6×

10^-6 /°

C.

7. A bonded type piezoelectric apparatus according to claim 5, wherein said securing member is a metal mounting plate.

8. A bonded type piezoelectric apparatus, comprising:

a piezoelectric ceramic material having at least one planar surface;

an active layer of a metal having a high fusibility with said piezoelectric ceramic material provided directly on said at least one planar surface;

a solder layer provided on said active layer;

a securing member to which said piezoelectric ceramic material is bonded via a bonding layer made of a metallic solder material provided between said solder layer and said securing member;

wherein said solder layer is made of a material selected from the group consisting of gold and silver having a high fusibility with said bonding layer and wherein said securing member is a metal mounting plate or an insulating ceramic securing member.

9. A bonded type piezoelectric apparatus, comprising:

a piezoelectric ceramic material having at least one planar surface;

an active layer of a metal having a high fusibility with said piezoelectric ceramic material provided directly on said at least one planar surface;

a solder layer provided on said active layer;

a securing member to which said piezoelectric ceramic material is bonded via a bonding layer made of a metallic solder material provided between said solder layer and said securing member, wherein said solder layer is made of a metal having a high fusibility with said bonding layer and wherein said securing member is a metal mounting plate or an insulating ceramic securing member; and

further comprising a barrier layer provided between said active layer and said solder layer, said barrier layer preventing diffusion of the metals in said active layer and said solder layer.

10. A bonded type piezoelectric apparatus according to claim 9, wherein said barrier layer is made of a material selected from the group consisting of Pt, Ni and Cr.

11. A bonded type piezoelectric apparatus according to claim 9, wherein said active layer is made of Ti, said barrier layer is made of Pt, and said solder layer is made of Au.

12. A bonded type piezoelectric apparatus comprising:

a piezoelectric ceramic material having at least one planar surface;

a metallizing layer provided directly on said one major planar surface; and

a metal mounting plate to which said piezoelectric ceramic material is bonded via a bonding layer;

wherein said metal mounting plate is made of a material having a thermal expansion coefficient substantially the same as that of said piezoelectric ceramic material when said piezoelectric ceramic material is in a non-polarization condition.

13. A bonded type piezoelectric apparatus according to claim 12, wherein said metal mounting plate is made of a material having a thermal expansion coefficient leas than 6×

10^-6 /°

C.