Fabrication method of superconductive thin film transistor
First Claim
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1. A method of fabricating a superconductive thin film transistor comprising the steps of:
- forming a channel layer comprising a non-superconductive material having a perovskite structure on a substrate; and
forming source and drain regions comprising an oxide superconducting material on said substrate so that said channel layer contracts and intervenes between said source and drain regions, wherein a-b planes of said oxide superconducting material are substantially aligned with a surface of said substrate.
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Abstract
A planar type superconductive thin film transistor using oxide superconductive materials and utilizing a long distance proximity effect is obtained with a good reproducibility.
In order to obtain the planar type superconductive transistor utilizing the long distance proximity effect, an interlayer separating film that plays a similar role with resists is used together with conventional resists in high temperature annealing process.
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Citations
8 Claims
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1. A method of fabricating a superconductive thin film transistor comprising the steps of:
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forming a channel layer comprising a non-superconductive material having a perovskite structure on a substrate; and forming source and drain regions comprising an oxide superconducting material on said substrate so that said channel layer contracts and intervenes between said source and drain regions, wherein a-b planes of said oxide superconducting material are substantially aligned with a surface of said substrate. - View Dependent Claims (2, 3, 4)
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5. A method for fabricating a superconductive thin film transistor utilizing oxide superconductive materials, comprising the steps of:
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providing a non-light-transmitting insulating substrate; forming a lamination layer on said substrate in an island shape, said lamination layer including a non-superconducting layer with a perovskite structure, an insulating film layer, and a conductor layer; selectively etching sides of said conductor layer to form etched portions of said conductor layer; depositing an interlayer separating film; applying a positive resist on said interlayer separating film; removing a selected portion of said positive resist and selectively etching said interlayer separating film, to leave said interlayer separating film around said conductor layer; forming a film composed of an oxide superconductive material to produce source and drain regions; removing portions of said oxide superconductive film formed on said interlayer separating film, by moving said interlayer separating film left at the etched portions of said conductor layer, to define said source and drain regions, said non-superconducting layer forming the channel region of the thin film transistor and said conductor layer forming the gate electrode of the thin film transistor. - View Dependent Claims (6, 7)
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8. A method for fabricating a superconductive thin film transistor utilizing oxide superconductive materials, comprising the steps of:
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providing a light-transmitting insulating substrate with front and back sides; forming a lamination layer on the front of said substrate in an island shape, said lamination layer including a non-superconducting layer with a perovskite structure, an insulating film layer, and a conductor layer; selectively etching sides of said conductor layer to form etched portions of said conductor layer; depositing a carbon-based interlayer separating film on the front of said substrate; applying a positive resist on said interlayer separating film; irradiating light from the back of said substrate to sensitize said positive resist; removing irradiated portions of the positive resist and selectively etching said interlayer separating film to leave said interlayer separating film around said conductor layer; forming a film composed of an oxide superconductive material to produce source and drain regions; removing portions of said oxide superconductive film formed on said interlayer separating film, by removing said interlayer separating film left at the etched portions of said conductor layer, to define said source and drain regions, said non-superconducting layer forming the channel region of the thin film transistor and said conductor layer forming the gate electrode of the thin film transistor.
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Specification