Linear image sensor with shutter gates for draining excess charge

• US 5,326,997 A
• Filed: 12/01/1992
• Issued: 07/05/1994
• Est. Priority Date: 06/18/1992
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Nakanishi, Junji
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US07/984,083
• Time in Patent Office: 581 Days
• Field of Search: 257/223, 257/230, 257/233, 257/234, 257/236, 358/213.19, 358/213.25, 358/213.28, 358/213.29, 358/213.31
• US Class Current: 257/230
• CPC Class Codes: H01L 27/14887 Blooming suppression
• CPC Class Codes: H04N 25/53 Control of the integration time
• CPC Class Codes: H04N 25/622 by controlling anti-blooming drains
• CPC Class Codes: H04N 25/701 Line sensors
• CPC Class Codes: H04N 25/713 Transfer or readout registers; Split readout registers or multiple readout registers
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

In a linear sensor, a charge transfer part is disposed between a one-dimensional array of photodetectors and an overflow drain and includes a CCD having four or more transfer gates for each photodetector for transferring signal charges from the photodetector array in a direction of the photodetector array, transfer gates controlling charge transfer from the photodetectors to the CCD, and shutter gates for controlling charge transfer from the charge transfer part to the overflow drain. Each transfer gate is disposed between each photodetector and a prescribed one of the four or more transfer gates, and each shutter gate is disposed between the prescribed transfer gate and the overflow drain. The four or more CCD transfer gates are controlled by four or more phase driving clocks. Therefore, during charge transfer, at least three adjacent CCD transfer gates are all closed so that signal charges are drained from the photodetector into the overflow drain through the transfer gate in the middle of the three transfer gates without mixing the drained signal charges with the signal charges transferred. The charge drain operation is carried out during the charge transfer operation in the charge transfer part whereby the timing of opening the shutter gate can be set at an arbitrary time in the charge read cycle.

Claims

1. A linear sensor comprising:

a semiconductor substrate;

a one-dimensional array of photodectors for producing signal charges in response to incident light;

a charge transfer part for transferring signal charges stored in said photodetector array, said charge transfer part being disposed on one side of and parallel to said photodetector array;

a charge drain part for draining signal charges through said charge transfer part, said charge drain part being disposed on an opposite side of said charge transfer part from said photodetector array;

said charge transfer part including;

a charge coupled device (CCD) having at least four CCD transfer gates for each photodetector for transferring signal charges from each photodetector in a direction along said photodetector array;

photodetector transfer gates for controlling charge transfer from said photodetector array to said CCD, each photodetector transfer gate being disposed between one of said photodetectors and one of said CCD transfer gates corresponding to said photodetector;

shutter gates for controlling charge transfer from a respective CCD transfer gate of said CCD transfer gates for each photodetector to said charge drain part, each shutter gate being disposed between and respectively connected to one of said transfer gates for each photodetector and said charge drain part; and

at least four phase driving clocks for controlling said CCD transfer gates and said shutter gates, said driving clocks turning off the two CCD transfer gates adjacent a CCD transfer gate connected to a shutter gate when said shutter gate and said CCD transfer gate connected to said shutter gate are turned on to transfer signal charges to said charge drain part.

2. The linear image sensor of claim 1 wherein said CCD includes five CCD transfer gates for each photodetector and five-phase driving clocks for controlling said CCD transfer gates.

3. The linear image sensor of claim 1 wherein said photodetectors are Schottky barrier diodes for detecting infrared light, each diode comprising a platinum silicide layer disposed on a p type silicon substrate.

4. The linear image sensor of claim 3 wherein said charge drain part is disposed parallel to said photodetector array on said p type silicon substrate and comprises an n type region in said substrate in which charge drain wells deeper than charge storage wells of said photodetectors and charge transfer wells of said CCD are formed when a positive voltage is applied.

5. The linear image sensor of claim 1 wherein said CCD consist of four CCD transfer gates for each photodetector and four-phase driving clocks for controlling said CCD transfer gates.

6. The linear image sensor of claim 1 including fewer CCD transfer gates for each photodetector than phase driving clocks for said CCD transfer gates.