Page-mode type memory writing control circuit using end-of-page address

• US 5,327,395 A
• Filed: 10/06/1992
• Issued: 07/05/1994
• Est. Priority Date: 10/07/1991
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Tanaka, Yoshiyuki, Tanaka, Tomoharu, Iwata, Yoshihisa, Momodomi, Masaki, Sugiura, Yoshihisa, Itoh, Yasuo
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): DINH, SON T
• Application Number:
  US07/957,000
• Time in Patent Office: 637 Days
• Field of Search: 365/238.5, 365/230.05, 365/189.08, 365/219, 365/240, 365/230.08, 395/164, 395/166, 395/425, 340/799
• US Class Current: 365/238.5
• CPC Class Codes: G11C 16/08 Address circuits; Decoders; Word-line control circuits
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 2216/14 Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory

Abstract

A NOR operation is performed on the address bit by bit by a NOR circuit, and when the final address in a page is detected from the result of the NOR operation by a final address detection circuit, a program starting circuit executes data writing to a memory cell. This can ensure detection of the final address in a page without using a counter circuit. It is therefore possible to simplify the structure of the final address detection circuit and reduce the circuit area occupying in a semiconductor memory device.

Claims

1. A semiconductor memory device comprising:

a non-volatile semiconductor memory device writable page by page;

a logic circuit applied with address signals for detecting a final address in a page and generating a final address signal when said final address has been detected; and

a write circuit responsive to said logic circuit for writing data into said non-volatile semiconductor memory device in accordance with whether said final address signal has been generated.

4. The semiconductor memory device according to claim 1, wherein said data include page data supplied to said semiconductor memory device and sequentially latched into a latch circuit.

2. A semiconductor memory device comprising:

a non-volatile semiconductor memory device writable page by page;

a NOR circuit for performing a NOR operation on a page address signal from an address buffer and generating a final address detection signal;

a final address detection circuit for receiving said final address detection signal from said NOR circuit, detecting said final address in a page, and generating an output signal; and

a write circuit for writing data into said non-volatile semiconductor memory device in accordance with said output signal of said final address detection circuit.

3. The semiconductor memory device according to claim 2, wherein said detection circuit includes a plurality of NOR circuits for performing a NOR operation on an address bit by bit, and a NAND circuit for performing a NAND operation on an output signal of said NOR circuits.

5. The semiconductor memory device according to claim 2, wherein said data include page data supplied to said semiconductor memory device and sequentially latched into a latch circuit.