Bridge for connecting cores in a manufacturing equipment of polycrystal silicon

• US 5,327,454 A
• Filed: 04/27/1992
• Issued: 07/05/1994
• Est. Priority Date: 11/04/1989
• Status: Expired due to Fees

• Current Assignee: Komatsu Electronic Metals Co., Ltd. (Sumco Corporation)
• Original Assignee: Komatsu Electronic Metals Co., Ltd. (Sumco Corporation)
• Inventors: Miyamoto, Yusuke, Ohtsuki, Minoru, Nagai, Kenichi
• Primary Examiner(s): Reynolds, Bruce A.
• Assistant Examiner(s): HOANG, TU BA
• Application Number:
  US07/849,450
• Time in Patent Office: 799 Days
• Field of Search: 373/133, 373/134, 373/135, 373/132, 373/109, 373/117, 437/233, 437/255.1, 437/255.2, 437/202, 437/159, 156/611, 156/613, 156/606 OR, 422/250, 422/249, 422/246, 422/199, 422/244, 427/74, 427/85, 427/86, 427/429, 75/686, 423/346, 148/DIG. 16, 357/63, 118/49.5
• US Class Current: 373/133
• CPC Class Codes: C01B 33/035 by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C30B 13/00 Single-crystal growth by zone-melting; Refining by zone-melting C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00
• CPC Class Codes: C30B 29/06 Silicon

Abstract

In a equipment for manufacturing polycrystal silicon by depositing it on filament cores electrically heated, by means of thermal decomposition of monosilane gas, a bridge for connecting said filament cores is constituted by tantalum, molybdenum, tungsten or zirconium. Preferably the sectional shape of the connection bridge may be of upturned triangle, tear droplet or rectangle.

Claims

1. A bridge connecting filament cores in polycrystalline silicon manufacturing equipment, said bridge consisting essentially of a material selected from the group consisting of molybdenum, tungsten and zirconium;

wherein said filament cores are capable of being electrically heated and coated with polycrystalline silicon;

wherein said polycrystalline silicon is vapor deposited by the thermal decomposition of monosilane gas.

2. The bridge of claim 1 having a cross sectional shape selected from the group consisting of upturned triangle, tear droplet and rectangle.

3. The bridge of claim 2 having a cross sectional shape of tear droplet.