Porous semiconductor light emitting device

• US 5,331,180 A
• Filed: 04/28/1993
• Issued: 07/19/1994
• Est. Priority Date: 04/30/1992
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Yamada, Masao, Collins, George J., Tamura, Tetsuro, Nakano, Motoo, Takazawa, Akira
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/053,562
• Time in Patent Office: 447 Days
• Field of Search: 257/79, 257/95, 257/3, 257/10, 257/11, 257/77, 257/76, 257/16, 257/17, 257/15, 257/22, 257/103, 257/63, 257/65
• US Class Current: 257/3
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/0445 the devices having semiconductor bodies comprising crystalline silicon carbide multistep processes for the manufacture of said devices H01L29/66053
• CPC Class Codes: H01L 21/306 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/31
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 33/346 containing porous silicon
• CPC Class Codes: Y10S 438/911 Differential oxidation and etching
• CPC Class Codes: Y10S 438/96 Porous semiconductor
• CPC Class Codes: Y10S 438/962 Quantum dots and lines

Abstract

An Si or SiC semiconductor layer is subjected to anodic oxidization in an HF solution to form a porous semiconductor layer. Without drying the porous semiconductor layer, it is then dipped in pure water. Ultrasonic waves applied to the pure water shorten the reaction time and help bubbles separate from the surface of the porous region. The porous semiconductor layer is used for forming a pn junction, and carriers are injected into the pn junction.

Claims

1. A semiconductor light emitting device comprising:

a first of one of Si and SiC semiconductor layer of a first conductivity type, said first semiconductor layer including a porous surface region formed of a quantum wire cluster having a transition energy different from the bulk state; and

a second layer formed on said porous region and having a function of supplying carriers of a second conductivity type, said porous region and said second layer forming a diode structure.

2. A semiconductor light emitting device according to claim 1, wherein is included a metal electrode formed on said first semiconductor layer and a transparent conductive layer formed on said second layer.

3. A semiconductor light emitting device according to claim 1, wherein said second layer forms one of a pn junction and Schottky contact with said porous region.

4. A semiconductor light emitting device according to claim 1, wherein said second layer includes an oxidized layer covering said porous region and a semiconductor layer of the second conductivity type formed on said oxidized layer.

5. A semiconductor light emitting device according to claim 4, wherein is included a metal electrode formed on said first semiconductor layer and a transparent conductive layer formed on said second layer.

6. A semiconductor light emitting device according to claim 5, wherein said second layer forms one of a pn junction and Schottky contact with said porous region.

7. A semiconductor light emitting device according to claim 5, wherein is included a source of electrical energy for applying a forward bias voltage to said diode structure to thereby inject minority carriers into said quantum wire cluster and cause light emission by recombination of carriers.

8. A semiconductor light emitting device according to claim 5, wherein is included a source of electrical energy for applying a reverse bias voltage to said diode structure to thereby cause an avalanche breakdown to occur to produce recombination light emission.

9. A semiconductor light emitting device according to claim 1, wherein is included a support substrate, said first semiconductor layer being a polycrystalline Si layer formed on said support substrate.

10. A semiconductor light emitting device according to claim 9, wherein said support substrate is a quartz substrate.

11. A semiconductor light emitting device according to claim 1, wherein said second layer is a conductive polymer layer.

12. A semiconductor light emitting device according to claim 11, wherein is included an electrode for said first semiconductor layer and an electrode for said conductive polymer layer.

13. A semiconductor light emitting device according to claim 11, wherein said conductive polymer comprises at least one of a polypyrrole derivative, a polyacetylene derivative, and a polyaniline derivative.

14. A semiconductor light emitting device according to claim 12, wherein is included an insulating substrate, and a p-type polycrystalline Si layer, one of said electrodes being formed on said insulating substrate, said p-type polycrystalline Si layer being formed on said one of said electrodes, and said first semiconductor layer being formed on said p-type polycrystalline Si layer.

15. A semiconductor light emitting device according to claim 14, wherein said insulating substrate and said one of said electrodes are transparent relative to light radiated from said light emitting device.

16. A semiconductor light emitting device according to claim 1, wherein is included a transparent conductive film formed on top of said porous region and having an area smaller than the area of said porous region, and a conductive film formed beneath said porous region on an opposite side of said porous region from said transparent conductive film and having an area larger than the area of said transparent conductive film

17. A semiconductor light emitting device according to claim 16, wherein is included a plurality of said transparent conductive films formed on said porous region.

18. An Si light emitting device comprising:

a laminated SOI substrate structure comprising an Si layer, an insulating layer, and a support substrate, said support substrate and said insulating layer being formed with an opening at an area corresponding to a predetermined area of said Si layer;

a porous Si region formed in said Si layer at said predetermined area;

an n-type region formed in said Si layer at an area adjacent to said predetermined area of the Si layer; and

a p-type region formed in said Si layer at an area adjacent to said predetermined area of the Si layer and facing said n-type region.

19. A semiconductor light emitting device according to claim 18, wherein is included an Si oxide film formed on said porous Si region.

20. A semiconductor light emitting device according to claim 18, wherein is included a metal oxide film formed over said opening of said SOI substrate.

21. A semiconductor light emitting device comprising:

a light emission layer including a cluster of SiC quantum wires having diameters of 10 nm or less; and

a source of electrical excitation connected to said light emission layer.

22. A semiconductor light emitting device according to claim 21, wherein said SiC is p-type conductive and doped with one or more group III elements.

23. A semiconductor light emitting device according to claim 21, wherein said source of electrical excitation includes one of an SiC thin film having a conductivity type opposite to the conductivity type of said SiC quantum wires and a transparent conductive thin film, said thin film being coupled to said quantum wire cluster, said device including an electrode connected to said thin film and an electrode connected to said SiC quantum wire cluster.

24. A semiconductor light emitting device according to claim 21, wherein is included an Si substrate supporting said light emission layer, and an Si quantum wire cluster formed in a surface region of said Si substrate.

25. A semiconductor light emitting device comprising:

one of an Si and SiC porous semiconductor layer; and

an electron field emitter disposed in facing relationship to said porous semiconductor layer.

26. A semiconductor light emitting device according to claim 25, wherein said electron field emitter has a sharp edge made of Si.