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Porous semiconductor light emitting device

  • US 5,331,180 A
  • Filed: 04/28/1993
  • Issued: 07/19/1994
  • Est. Priority Date: 04/30/1992
  • Status: Expired due to Term
First Claim
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1. A semiconductor light emitting device comprising:

  • a first of one of Si and SiC semiconductor layer of a first conductivity type, said first semiconductor layer including a porous surface region formed of a quantum wire cluster having a transition energy different from the bulk state; and

    a second layer formed on said porous region and having a function of supplying carriers of a second conductivity type, said porous region and said second layer forming a diode structure.

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