Capacitive surface micromachined differential pressure sensor

• US 5,332,469 A
• Filed: 02/05/1993
• Issued: 07/26/1994
• Est. Priority Date: 11/12/1992
• Status: Expired due to Fees

• Current Assignee: University of Michigan
• Original Assignee: Ford Motor Company
• Inventors: Mastrangelo, Carlos H.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/014,025
• Time in Patent Office: 536 Days
• Field of Search: 156/643, 156/628, 156/644, 156/648, 156/650, 156/656, 156/657, 156/659.1, 156/662, 73/715, 73/718, 73/720, 73/724, 73/726, 29/621.1, 338/4, 357/26, 437/228, 437/233, 437/241, 437/901, 437/919, 437/921
• US Class Current: 216/2
• CPC Class Codes: B23P 15/00 Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 3/0013 Structures dimensioned for mechanical prevention of stiction, e.g. spring with increased stiffness
• CPC Class Codes: B81C 1/00476 removing a sacrificial layer B81C1/00912 takes precedence
• CPC Class Codes: B81C 1/0092 For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
• CPC Class Codes: B81C 1/00944 Maintaining a critical distance between the structures to be released
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/30105 Capacitance
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate
• CPC Class Codes: Y10T 29/49103 Strain gauge making

Abstract

A surface layer and a sacrificial layer are deposited on a substrate. A conductive structural layer bridges over the sacrificial layer and is anchored to the surface layer for creating paired conductive areas. A backside opening is etched in the substrate for defining a flexible diaphragm layer of reduced thickness. The sacrificial layer is removed so that pressures exerted on the backside opening will cause a change in capacitance between the paired conductive areas. Temporary posts support the conductive structural layer as the sacrificial layer is removed.

Claims

1. A method for fabricating a micromachined capacitive differential pressure sensor on a substrate, comprising the steps of:

selectively implanting a doping material into the substrate so as to define a first etch-stop layer,

depositing a surface layer of semiconductor material over the substrate so as to at least cover said first etch-stop layer for defining a diaphragm thereon,

depositing a passivating conductive layer over said diaphragm to form a diaphragm electrode,

selectively depositing a sacrificial layer over said diaphragm and said passivating conductive layer thereon,

anchoring a conductive structural layer to said surface layer such that said sacrificial layer is located between the substrate and said structural layer so as to form a second electrode,

selectively etching said substrate from the side opposite said structural layer so as to form an open backside aperture that terminates at said first etch-stop layer,

selectively removing said first etch-stop layer such that such backside aperture couples to said diaphragm on the side opposite said structural layer,

forming at least one temporary post extending through said structural layer toward said surface layer for reducing the deflection therebetween,

removing said sacrificial layer so as to form a diaphragm cavity into which said diaphragm may deflect in response to the pressure to be measured, and

removing said temporary posts,

whereby pressure exerted through said backside aperture causes a deflection of said diaphragm and a corresponding change of the capacitance between said first and second electrodes.

2. The method of microstructure fabrication as in claim 1, wherein the step of forming at least one temporary post comprises the steps of:

etching at least one hole in said structural layer,

applying a selective etchant through said at least one hole to form a void area in said sacrificial layer,

depositing a column forming layer resistant to the sacrificial layer etchant through at least one of said holes in said structural layer to substantially fill said void area and to form a post embedded in said sacrificial layer and supportingly coupled to said structural layer through said at least one hole, and then applying said column forming layer to at least a portion of said structural layer, and

removing said column forming layer from said structural layer except where said column forming layer extends over said at least one hole.

3. The method of microstructure fabrication as in claim 2, wherein the step of removing said column forming layer from said structural layer comprises the steps of:

depositing a film of material resistant to plasma etching in a pattern over the surface of said column forming layer, said pattern overlaying each of said holes through which the said column forming layer is disposed to substantially fill said void area;

removing said column forming layer generally outside said pattern from said structural layer by plasma etching; and

then

removing said film of material in said pattern.

4. The method of microstructure fabrication as in claim 2, wherein said step of applying an etchant through said at least one hole includes forming a void area including an undercut area in said sacrificial layer.

5. The method of microstructure fabrication as in claim 2, wherein said step of applying an etchant through said at least one hole includes forming said void area extending from said hole in said structural layer to said substrate.

6. The method of microstructure fabrication as in claim 2, wherein said step of depositing a column forming layer resistant to said sacrificial layer etchant through said at least One hole includes the step of depositing a polymer by vapor deposition into said void area.

7. The method of microstructure fabrication as in claim 2, wherein said step of depositing a column forming layer resistant to said sacrificial layer etchant includes the step of depositing a conformal polymer.

8. The method of microstructure fabrication as in claim 2 wherein:

said step of etching at least one hole comprises etching a plurality of holes in said structural layer; and

said method further comprises the steps of;

covering at least one of said plurality of holes with a protective layer resistant to sacrificial layer etchant; and

after the step of applying an etchant through at least one hole to form said diaphragm cavity, removing said protective layer.

9. The method of microstructure fabrication as in claim 8 wherein:

said step of depositing a structural layer comprises depositing a layer comprising polysilicon; and

said step of covering at least one of said plurality of holes with a protective layer is performed by applying a photoresist polymer.

10. The method of microstructure fabrication as in claim 1, wherein said step of removing said temporary posts comprises the step of etching said temporary posts using a dry-etching method.

11. The method of microstructure fabrication as in claim 1, wherein said step of depositing said sacrificial layer includes the step of depositing a high-temperature resistant sacrificial layer capable of remaining substantially unaffected by temperatures of at least approximately 600°

C.

12. The method of microstructure fabrication as in claim 2, wherein the step of selectively implanting said doping material further includes the step of sizing said etch stop layer to be approximately the size of said diaphragm but larger than a closed end of said backside aperture, thereby forming a recess notch adjacent to said diaphragm after the step of etching said backside aperture.

13. The method of microstructure fabrication as in claim 1, wherein the steps of depositing a surface layer, depositing a passivating conductive layer, selectively depositing a sacrificial layer, anchoring a conductive structural layer, forming at least one temporary post, removing the sacrificial layer, and then removing said temporary posts each further include corresponding steps for forming a matching reference capacitor on said substrate adjacent to but spaced laterally from said backside aperture.

14. A surface micromachined differential pressure sensor comprising:

a substrate,

a surface layer on one side of said substrate,

a pair of first conductive areas laterally adjacent to each other in said surface layer,

a pair Of bridging conductive layers, each coupled to said substrate and bridging over its corresponding one of said first conductive areas so as to form a capacitor therewith and a diaphragm cavity therebetween,

a backside aperture opening from the side of said substrate opposite from said one side and communicating into said substrate so as to define a flexible diaphragm layer of reduced thickness juxtaposed with said first conductive area,

whereby pressure exerted through said backside aperture results in a displacement of said flexible diaphragm causing a variation only in the capacitance between said bridging conductive layer and said first conductive area juxtaposed with said backside aperture.

15. The surface micromachined differential pressure sensor as described in claim 14, wherein each of said bridging conductive layers include at least two apertures therethrough for communicating into said diaphragm cavity therebetween.

16. The surface micromachined differential pressure sensor as described in claim 14, wherein said surface layer comprises polysilicon.

17. The surface micromachined differential pressure sensor as described in claim 14, further including:

a support post coupled through one of said apertures in said bridging conductive layers and extending through said diaphragm cavity to effectively abut with said substrate responsive to a deflection of said bridging conducting layer.

18. The surface micromachined differential pressure sensor as described in claim 17, wherein said supportive post is formed from a polymer removable by dry-etching techniques.