Multilayer ceramic chip capacitor

• US 5,335,139 A
• Filed: 07/13/1993
• Issued: 08/02/1994
• Est. Priority Date: 07/13/1992
• Status: Expired due to Term

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: Nomura, Takeshi, Arashi, Tomohiro, Nakano, Yukie, Satoh, Akira
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Paladugu, Ramamohan Rao
• Application Number:
  US08/090,257
• Time in Patent Office: 385 Days
• Field of Search: 29/25.03, 29/25.42, 437/919, 148/DIG. 14, 501/137, 252/520, 252/521, 361/311, 361/321.1, 361/321.2, 361/321.3, 361/321.4, 361/321.5
• US Class Current: 361/321.4
• CPC Class Codes: H01G 4/1227 based on alkaline earth titanates
• CPC Class Codes: Y10T 29/435 Solid dielectric type

Abstract

A multilayer ceramic chip capacitor includes alternately stacked dielectric layers and internal electrode layers. The dielectric layers contain barium titanate as a major component and magnesium oxide, manganese oxide, barium oxide and/or calcium oxide, silicon oxide and optionally, yttrium oxide as minor components in such a proportion that there are present 0.1-3 mol of MgO, 0.05-1.0 mol of MnO, 2-12 mol of BaO+CaO, 2-12 mol of SiO₂ and up to 1 mol of Y₂ O₃ per 100 mol of BaTiO₃. The capacitor satisfies the standard temperature dependence of capacitance and shows a minimized change of capacitance with time under an applied DC electric field and a long insulation resistance life. Where the dielectric layers contain 0.1-3 mol of MgO, 1-5 mol of Y₂ O₃, 2-12 mol of BaO+CaO, and 2-12 mol of SiO₂ per 100 mol of BaTiO₃, the capacitor shows improved DC bias performance.

Claims

1. A multilayer ceramic chip capacitor comprising alternately stacked dielectric layers and internal electrode layers, wherein

said dielectric layers contain barium titanate as a major component and magnesium oxide, manganese oxide, at least one of barium oxide and calcium oxide, and silicon oxide as minor components in such a proportion that there are present

MgO:

0.1-3 mol

MnO;

0.05-1.0 mol

BaO+CaO;

2-12 mol

SiO₂ ;

2-12 mol

per 100 mol of BaTiO₃, provided that the barium titanate, magnesium oxide, manganese oxide, barium oxide, calcium oxide, and silicon oxide are calculated as BaTiO₃, MgO, MnO, BaO, CaO, and SiO₂, respectively.

2. The multilayer ceramic chip capacitor of claim 1 wherein in said dielectric layers, BaO, CaO and SiO₂ are contained in the form of (Ba_x Ca_1-x O)_y.SiO₂ in an amount of 1 to 10% by weight based on the total weight of BaTiO₃, MgO and MnO wherein letters x and y are 0.3≦

x≦

0.7 and 0.95≦

y≦

1.05.

3. The multilayer ceramic chip capacitor of claim 1 wherein said internal electrode layers contain a conductor in the form of nickel or a nickel alloy.

4. The multilayer ceramic chip capacitor of claim 3 which has been fired in an atmosphere having an oxygen partial pressure of 10^-8 to 10^-12 atm. at a temperature of 1,200°

C. to 1,400°

C.

5. The multilayer ceramic chip capacitor of claim 4 which has been annealed in an atmosphere having an oxygen partial pressure of at least 10^-6 atm. at a temperature of up to 1,100°

C. after firing.

6. A multilayer ceramic chip capacitor comprising alternately stacked dielectric layers and internal electrode layers, wherein

said dielectric layers contain barium titanate as a major component and magnesium oxide, manganese oxide, yttrium oxide, at least one of barium oxide and calcium oxide, and silicon oxide as minor components in such a proportion that there are present

MgO:

0.1-3 mol

MnO;

0.05-1.0 mol

Y₂ O₃ ;

up to 1 mol

BaO+CaO;

2-12 mol

SiO₂ ;

2-12 mol

per 100 mol of BaTiO₃, provided that the barium titanate, magnesium oxide, manganese oxide, yttrium oxide, barium oxide, calcium oxide, and silicon oxide are calculated as BaTiO₃, MgO, MnO, Y₂ O₃, BaO, CaO, and SiO₂, respectively.

7. The multilayer ceramic chip capacitor of claim 6 wherein in said dielectric layers, BaO, CaO and SiO₂ are contained in the form of (Ba_x Ca_1-x O)_y.SiO₂ in an amount of 1 to 10% by weight based on the total weight of BaTiO₃, MgO, MnO and Y₂ O₃ wherein letters x and y are 0.3≦

x≦

0.7 and 0.95≦

y≦

1.05.

8. The multilayer ceramic chip capacitor of claim 6 wherein said internal electrode layers contain a conductor in the form of nickel or a nickel alloy.

9. The multilayer ceramic chip capacitor of claim 8 which has been fired in an atmosphere having an oxygen partial pressure of 10^-8 to 10^-12 atm. at a temperature of 1,200°

C. to 1,400°

C.

10. The multilayer ceramic chip capacitor of claim 9 which has been annealed in an atmosphere having an oxygen partial pressure of at least 10^-6 atm. at a temperature of up to 1,100°

C. after firing.

11. A multilayer ceramic chip capacitor comprising alternately stacked dielectric layers and internal electrode layers, wherein

said dielectric layers contain barium titanate as a major component and magnesium oxide, yttrium oxide, at least one of barium oxide and calcium oxide, and silicon oxide as minor components in such a proportion that there are present

MgO:

0.1-3 mol

Y₂ O₃ ;

more than 1 mol-5 mol

BaO+CaO;

2-12 mol

SiO₂ ;

2-12 mol

per 100 mol of BaTiO₃, provided that the barium titanate, magnesium oxide, yttrium oxide, barium oxide, calcium oxide, and silicon oxide are calculated as BaTiO₃, MgO, Y₂ O₃, BaO, CaO, and SiO₂, respectively.

12. The multilayer ceramic chip capacitor of claim 11 wherein said dielectric layers further contain aluminum oxide in an amount of up to 1% by weight calculated as Al₂ O₃.

13. The multilayer ceramic chip capacitor of claim 11 wherein said dielectric layers further contain manganese oxide as a minor component in such a proportion that there is present up to 0.5 mol of MnO per 100 mol of BaTiO₃, provided that the manganese oxide is calculated as MnO.

14. The multilayer ceramic chip capacitor of claim 13 wherein said internal electrode layers contain a conductor in the form of nickel or nickel alloy.

15. The multilayer ceramic chip capacitor of claim 14 which has been fired in an atmosphere having an oxygen partial pressure of 10^-8 to 10^-12 atm. at a temperature of 1,200°

C. to 1,400°

C.

16. The multilayer ceramic chip capacitor of claim 15 which has been annealed in an atmosphere having an oxygen partial pressure of at least 10^-6 atm. at a temperature of up to 1,100°

C. after firing.