Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films

• US 5,336,355 A
• Filed: 12/13/1991
• Issued: 08/09/1994
• Est. Priority Date: 12/13/1991
• Status: Expired due to Fees

• Current Assignee: Integrated Process Equipment Corp. (Speedfam Co., Ltd)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Zarowin, Charles B., Bollinger, L. David
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Goudreua, George
• Application Number:
  US07/807,535
• Time in Patent Office: 970 Days
• Field of Search: 156/643, 156/345, 118/723, 427/569, 427/446, 427/34, 427/294, 219/121.36, 219/121.4, 219/0.47, 219/0.48, 313/231.31, 313/231.51, 313/231.61, 315/111.21, 315/111.71
• US Class Current: 156/345.39
• CPC Class Codes: H01J 2237/20228 Mechanical X-Y scanning
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32633 Baffles

Abstract

A reactor 10 having a vacuum housing 30 which encloses a plasma chamber 14 is used to perform local plasma assisted chemical etching on an etchable substrate 12. The chamber 14 is movable and is sized according to the removal material footprint desired. An rf driven electrode 22 and rf driven gas diffuser 22 have the same diameter as the chamber 14. The substrate 12 is mounted on a substrate holder 44 which also acts as the other electrode. The holder 44 is mounted on an X-Y positioning table 46. A reactive gas is flowed into the chamber with rf power so as to break the reactive gas into a plasma. The plasma chamber 14 which locally confines the plasma may be scanned over the substrate surface while the gap between the chamber and the substrate is varied to yield a desired etch profile.

Claims

1. A material removal tool for performing confined plasma assisted chemical etching reactions on the surface of a substrate comprising a reactor having:

a housing;

a first dielectric insulator positioned within the housing for defining a plasma chamber cavity for performing a local plasma etching reaction about a localized region of a substrate;

means for supplying the plasma chamber with a flow of reactive gas;

means for providing the reactive gas within the plasma chamber with rf power so as to generate a plasma therein;

a second dielectric insulator positioned within the housing and around the first dielectric insulator, said second dielectric insulator extending outward from the first dielectric insulator such that extinction of any plasma outside the plasma chamber cavity is facilitated, said first dielectric insulator extending a preselected distance beyond said second dielectric insulator proximate the substrate surface such that a region of high plasma and low reactive gas flow conductance circumferentially adjacent to a site where plasma etching is occurring is created;

means for supporting the substrate; and

means for adjusting the position of said plasma chamber cavity with respect to said substrate surface.

2. The material removal tool of claim 1, wherein the means for supplying rf power includes a first electrode positioned within the plasma chamber cavity, an electrically conductive rf gas diffuser, and a second electrode positioned outside the plasma chamber cavity so that the substrate is positioned between the first and second electrodes so as to complete an electrical circuit for supplying rf power to the reactive gas within the plasma chamber cavity.

3. The material removal tool of claim 2, wherein the first electrode includes upper and lower surfaces, the upper surface being positioned in contact with the ceiling surface of the plasma chamber cavity;

and

the rf gas diffuser includes an upper and lower surface and is positioned so that the upper surface of the gas diffuser being in contact with the lower surface of the first electrode.

4. The material removal tool of claim 3, wherein the upper and lower surface areas of the first electrode having approximately the same area and approximately the same planar geometry as the surface of the ceiling of the plasma chamber cavity.

5. The material removal tool of claim 3, wherein the upper and lower surface areas of the electrically conductive gas diffuser have approximately the same area and approximately the same planar geometry as the surface of the ceiling of the plasma chamber cavity.

6. The material removal tool of claim 2, wherein the second electrode is maintained at substantially at ground potential.

7. The material removal tool of claim 2, wherein the electrically conductive gas diffuser is fabricated from porous silicon carbide.

8. The material removal tool of claim 2, wherein the electrically conductive gas diffuser is fabricated from graphite.

9. The material removal tool of claim 1, wherein the means for adjusting the position of said plasma chamber with respect to said substrate surface in the orthogonal direction comprises an x-y positioning table

10. The material removal tool of claim 1, wherein said housing includes means for applying a vacuum to the housing to remove reaction product and excessive reactive gas.

11. A material removal tool for performing confined plasma assisted chemical etching reactions on the surface of a substrate comprising a reactor having:

a housing means for carrying out a local plasma etching reaction including means for controlling the temperature and pressure of the environment within the housing;

a first dielectric insulator positioned with the housing for defining a plasma chamber having a cavity for performing a local plasma etching reaction about a localized region of a substrate;

means for supplying the plasma chamber with a flow of reactive gas including a gas diffuser;

means for providing the reactive gas within the plasma chamber with rf power so as to generate a plasma therein the includes a first electrode positioned within the plasma chamber cavity, an electrically conductive rf gas diffuser, and a second electrode positioned outside the plasma chamber cavity so that the substrate is positioned between the first and second electrodes so as to complete an electrical circuit for supplying rf power to the reactive gas within the plasma chamber cavity;

a second dielectric insulator positioned within the housing and around the first dielectric insulator, said second dielectric insulator extending outward from the first dielectric insulator, and thereby facilitating extinction of any plasma outside the plasma chamber cavity, and extending downward toward the substrate surface a distance shorter than the first dielectric insulator so as to allow the first dielectric insulator to create a region of high plasma and reactive flow impedance circumferentially adjacent to a site where plasma etching is occurring so that plasma outside the region is extinguished;

means for supporting the substrate; and

an X-Y positioning table means for adjusting the position of said substrate surface with respect to the plasma chamber in an orthogonal direction.