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Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films

  • US 5,336,355 A
  • Filed: 12/13/1991
  • Issued: 08/09/1994
  • Est. Priority Date: 12/13/1991
  • Status: Expired due to Fees
First Claim
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1. A material removal tool for performing confined plasma assisted chemical etching reactions on the surface of a substrate comprising a reactor having:

  • a housing;

    a first dielectric insulator positioned within the housing for defining a plasma chamber cavity for performing a local plasma etching reaction about a localized region of a substrate;

    means for supplying the plasma chamber with a flow of reactive gas;

    means for providing the reactive gas within the plasma chamber with rf power so as to generate a plasma therein;

    a second dielectric insulator positioned within the housing and around the first dielectric insulator, said second dielectric insulator extending outward from the first dielectric insulator such that extinction of any plasma outside the plasma chamber cavity is facilitated, said first dielectric insulator extending a preselected distance beyond said second dielectric insulator proximate the substrate surface such that a region of high plasma and low reactive gas flow conductance circumferentially adjacent to a site where plasma etching is occurring is created;

    means for supporting the substrate; and

    means for adjusting the position of said plasma chamber cavity with respect to said substrate surface.

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