Temperature sensing circuit

• US 5,336,943 A
• Filed: 07/01/1992
• Issued: 08/09/1994
• Est. Priority Date: 07/19/1991
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Lowis, Royce, Kelly, Brendan P.
• Primary Examiner(s): RUBIN, MARGARET R
• Application Number:
  US07/907,477
• Time in Patent Office: 769 Days
• Field of Search: 307/350, 307/355-356, 307/358, 307/310, 307/491
• US Class Current: 327/513
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00

Abstract

A temperature sensing circuit has a first insulated gate field effect device which is operated deep into its subthreshold region where the voltage across the device varies with temperature and has a second insulated gate field effect device which is operated in an area of its square law region where the voltage across the second insulated gate field effect device is substantially independent of temperature. A comparator compares the voltages across the first and second field effect devices and provides a signal OT indicating the temperature sensed by the first insulated gate field effect device.

Claims

1. A temperature sensing circuit comprising:

a first insulated gate field effect device, a second insulated gate field effect device, means for operating the first insulated gate field effect device in its subthreshold region so that the voltage across the first insulated gate field effect device varies with temperature, means for comparing the voltages across the first and second insulated gate field effect devices, and means for operating the second insulated gate field effect device in an area of its square law region where the voltage across the second insulated gate field effect device is substantially independent of temperature so that the comparing means provides a signal indicative of the temperature sensed by the first insulated gate field effect device.

2. A circuit according to claim 1, further comprising a resistor connected in series with the first insulated gate field effect device, and wherein the comparing means is arranged to compare the voltage across the series connection of the first insulated gate field device and the resistor with the voltage across the second insulated gate field effect device.

3. A circuit according to claim 2, wherein the first and second insulated gate field effect devices comprise diode-connected insulated gate field effect transistors.

4. A circuit according to claim 2, wherein the first insulated gate field effect device comprises two insulated gate field effect transistors each having one main electrode connected to its gate electrode, the other main electrode of one of the two transistors being connected to the one main electrode of the other transistor, each of the two transistors having a back gate electrode with the back gate electrode of the other transistor connected to the same potential as the back gate electrode of the one transistor.

5. A circuit according to claim 2, wherein the means for operating the first and second insulated gate field effect devices comprises respective resistors connected in series with the first and second insulated gate field effect devices.

6. A circuit according to claim 2 further comprising, means for clamping voltages across the first and second insulated gate field effect devices at a given voltage level.

7. A circuit according to claim 1, wherein the first and second insulated gate field effect devices comprise diode-connected insulated gate field effect transistors.

8. A circuit according to claim 7, wherein the first insulated gate field effect device comprises at least two series-connected insulated gate field effect transistors while the second insulated gate field effect device comprises a single insulated gate field effect transistor.

9. A circuit according to claim 1 wherein the first insulated gate field effect device comprises two insulated gate field effect transmission each having one main electrode connected to its gate electrode, the other main electrode of one of the two transistors being connected to the one main electrode of the other transistor, each of the two transistors having a back gate electrode with the back gate electrode of the other transistor connected to the same potential as the back gate electrode of the one transistor.

10. A circuit according to claim 9, wherein the means for operating the first and second insulated gate field effect devices comprises respective resistors connected in series with the first and second insulated gate field effect devices.

11. A circuit according to claim 1, wherein the means for operating the first and second insulated gate field effect devices comprises respective resistors connected in series with the first and second insulated gate field effect devices.

12. A circuit according to claim 11, further wherein each resistor comprises a diffused resistor formed in a surface region of one conductivity type of a semiconductor body, each resistor comprising a first region of the opposite conductivity type formed within the surface region and a second region of the one conductivity type formed within the first region, first and second electrodes being provided spaced-apart in contact with the second region which provides a resistive path between the first and second electrodes, and a third electrodes being provided for connecting the second region to a fixed reference potential.

13. A circuit according to claim 12 wherein the means for operating the first and second insulated gate field effect devices comprise first and second insulated gate field effect devices with conduction channels of different widths.

14. A circuit according to claim 12, further comprising voltage clamping means for regulating the voltage across the first and second insulated gate field effect devices.

15. A circuit according to claim 11, further comprising voltage clamping means for regulating the voltage across the first and second insulated gate field effect devices.

16. A circuit according to claim 1, further comprising voltage clamping means for regulating the voltage across the first and second insulated gate field effect devices.

17. A circuit according to claim 16, wherein the voltage clamping means comprises a series arrangement of diode-connected insulated gate field effect transistors.

18. A circuit according to claim 1, wherein the circuit is integrated with a power semiconductor device such that the circuit provides a signal for switching off the power semiconductor device when the temperature of the power semiconductor device sensed by the first insulated gate field effect device exceeds a predetermined value.

19. A circuit according to claim 1, wherein the first insulated gate field effect device comprises at least two-series connected insulated gate field effect transistors while the second insulated gate field effect device comprises a single insulated gate field effect transistor.

20. A circuit according to claim 19, wherein the means for operating the first and second insulated gate field effect devices comprises respective resistors connected in series with the first and second insulated gate field effect devices.

21. A circuit according to claim 20, wherein each resistor comprises a diffused resistor formed in a surface region of one conductivity type of a semiconductor body, each resistor comprising a first region of the opposite conductivity type formed within the surface region and a second region of the one conductivity type formed within the first region, first and second electrodes being provided spaced-apart in contact with the second region which provides a resistive path between the first and second electrodes, and a third electrode being provided for connecting the second region to a fixed reference potential.

22. A circuit according to claim 1 wherein the means for operating the first and second insulated gate field effect devices comprise first and second insulated gate field effect transistors, respectively, having conduction channels of different widths.

23. A circuit according to claim 1 further comprising, first and second resistors coupled in series with said first and second insulated gate field effect devices, respectively, to terminals or a supply voltage for the circuit, and a series arrangement of diode-connected insulated gate field effect transistors coupled to respective junction points between the first resistor and the first insulated gate field effect device and the second resistor and the second insulated gate field effect device so as to clamp the voltages across the first and second insulated gate field effect devices at a given voltage level.

24. A temperature sensing circuit comprising:

a first field effect transistor device arranged to respond to a temperature to be sensed,

a second field effect transistor device,

means for operating the first field effect transistor device in its subthreshold region where the voltage across the device varies with temperature and for operating the second field effect transistor device in an area of its square law region where the voltage across the second field effect transistor device substantially independent of temperature, and

means for comparing the voltages across the first and second field effect transistor devices thereby to derive at an output of the comparing means a signal indicative of the temperature to be sensed.

25. A temperature sensing circuit as claimed in claim 24, further comprising:

a first resistor connected in a first series circuit with the first field effect transistor device across a pair of supply voltage terminals for the circuit,

a second resistor connected in a second series circuit with the second field effect transistor device across said pair of supply voltage terminals, and wherein,

the first field effect transistor device comprises at least first and second diode-connected field effect transistors connected in series, and

the second field effect transistor device comprises a third diode-connected field effect transistor.