Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments

• US 5,338,362 A
• Filed: 08/26/1993
• Issued: 08/16/1994
• Est. Priority Date: 08/29/1992
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Imahashi, Issei
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): BASKIN, JONATHAN
• Application Number:
  US08/111,891
• Time in Patent Office: 355 Days
• Field of Search: 118/719, 118/723 E, 118/723 ER, 118/723 ME, 118/723 MR, 118/725, 118/728, 118/730, 118/733
• US Class Current: 118/719
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating

Abstract

An apparatus for forming a CVD film on semiconductor wafers includes a process chamber in which a rotary table capable of loading five wafers is provided. The interior of the process chamber is divided into six compartments by radially arranged partitions. The compartments comprise a wafer exchanging room for loading and unloading wafers, a first process room for forming a silicon film on the wafers, a second process room for oxidizing the silicon film into silicon oxide film and three exhaust rooms provided between the wafer exchanging room, the first process room and the second process room. The wafers are processed on the continuously rotating table. As the table is rotated, the wafers are processed in the first and second process rooms and unnecessary products produced in them are successively removed in the exhaust rooms.

Claims

1. An apparatus for processing a semiconductor wafer, comprising:

a process chamber;

a table arranged in said process chamber;

a supporting portion formed on said table, for supporting a wafer which has a main surface to be processed;

a mechanism for continuously rotating said table, said table being rotated about an axis which is positioned outside said wafer on said supporting portion and a circulation route of said wafer being defined by rotation of said table;

a partition for dividing said process chamber into a plurality of compartments arranged along said circulation route with a clearance being defined between said table and an opposing portion of said partition, said compartments including a first process room and a second process room;

an exhaust for evacuating a space including said first and second process rooms in said process chamber;

a first supply for supplying a first gas to said first process room; and

a second supply for supplying, to said second process room, active species of a second gas which is different from said first gas, said second supply having an exciting mechanism for making said second gas into plasma, said exciting mechanism being provided remote from said second process room so as to prevent ions in the plasma from being supplied to said second process room,

wherein said wafer passes through said first and second process rooms by continuous rotation of said table, and said first gas and said active species of said second gases are supplied alternately to said wafer to form on said wafer a reaction product, as a film, produced by chemical reaction of said first gas and said active species of said second gas wherein said table is provided with a plurality of supporting portions for individually supporting a plurality of wafers so as to process said wafers simultaneously; and

wherein said supporting portions each have a recess for supporting one of said wafers, and are formed such that said wafers are inclined inwardly.

2. The apparatus according to claim 1, wherein said first supply has mechanism for supplying said first gas which forms a first film on said wafer in said first process room, and said second supply has a mechanism for supplying said active species of said second gas which forms a second film in said second process room by reacting on said first film.

3. The apparatus according to claim 2, wherein said first supply includes a mechanism for supplying said first gas including a plurality of gas components such that reaction products produced from said gas components form said first film on said wafer in said first process chamber.

4. The apparatus according to claim 3, wherein said table has heaters for heating said wafer.

5. The apparatus according to claim 1, wherein said supporting portions are provided on an upper surface of said table, and said wafers are mounted on said supporting portions.

6. The apparatus according to claim 1, further comprising a mechanism for lifting and lowering said table in order to adjust said clearance between said table and said opposing portion of said partition.

7. The apparatus according to claim 6, wherein said compartments include a wafer exchanging room, and said apparatus comprises a load lock chamber provided corresponding to said wafer exchanging room and connected to said process chamber through gates and a transfer mechanism provided in said load lock chamber, for transporting said wafers onto and out of said table.

8. An apparatus for processing a semiconductor wafer comprising:

a process chamber;

a table arranged in said process chamber;

a supporting portion formed on said table, for supporting a wafer which has a main surface to be processed;

a mechanism for continuously rotating said table, said table being rotated about an axis which is positioned outside said wafer on said supporting portion and a circulation route of said wafer being defined by rotation of said table;

a partition for dividing said process chamber into a plurality of compartments arranged along said circulation route with a clearance being defined between said table and an opposing portion of said partition said compartments including a first process room, a second process room, a first exhaust room and a second exhaust room, said first exhaust room being provided between said first and second process rooms along said circulation route, said second exhaust room being provided between said second and first process rooms along said circulation route;

an exhaust for evacuating a space including said first and second process rooms and said first and second exhaust rooms in said process chamber;

a first supply for supplying a first gas to said first process room; and

a second supply for supplying, to said second process room, a second gas which is different from said first gas,

wherein said wafer passes through said first and second process rooms by continuous rotation of said table, and said first and second gases are supplied alternately onto the wafer so as to apply different processes to said wafer wherein said table is provided with a plurality of supporting portions for individually supporting a plurality of wafers so as to process said plurality of wafers simultaneously, and

wherein said supporting portions each have a recess for supporting one of said wafers, and are formed such that said wafers are inclined inwardly.

9. The apparatus according to claim 8, wherein said first and second supply include a mechanism for supplying said first and second gases for forming a film produced by chemical reaction of said first and second gases.

10. The apparatus according to claim 9, wherein said table has heaters for heating said wafer.

11. The apparatus according to claim 8, wherein said supporting portions are provided on an upper surface of said table, and said wafers are mounted on said supporting portions.

12. The apparatus according to claim 8, further comprising a mechanism for lifting and lowering said table in order to adjust said clearance between said table and said opposing portion of said partition.

13. The apparatus according to claim 12, wherein said exhaust is connected to said process chamber under said table, a gap through which gases in said first and second exhaust rooms are exhausted is provided between an inner face of said process chamber in each of said exhaust rooms and end portion of said table.

14. The apparatus according to claim 13, wherein gases in said first and second process rooms are exhausted through said clearance between said table and said opposing portion of said partition and through said first and second exhaust rooms.

15. The apparatus according to claim 14, wherein said partition comprises a plurality of substantially radially arranged partitions.

16. The apparatus according to claim 15, wherein said first process room and said first exhaust room are divided by one of said partitions, said second process room and said second exhaust room are divided by another of said partitions, and a communicating passageway having a gate is provided to each of said one and another of said partitions.

17. The apparatus according to claim 16, wherein said compartments include a wafer exchanging room, and said apparatus comprises a load lock chamber provided corresponding to said wafer exchanging room and connected to said process chamber through gates and a transfer mechanism provided in said load lock chamber, for transporting said wafers onto and out of said table.

18. The apparatus according to claim 17, wherein a gap through which gas in said wafer exchanging room is exhausted is provided between an inner face of said process chamber in said wafer exchanging room and an end portion of said table.