Chemical vapor deposition method, and chemical vapor deposition treatment system and chemical vapor deposition apparatus therefor

• US 5,338,363 A
• Filed: 11/24/1992
• Issued: 08/16/1994
• Est. Priority Date: 12/13/1991
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Kawata, Yoshinobu, Minami, Toshihiko
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US07/980,971
• Time in Patent Office: 630 Days
• Field of Search: 118/715, 118/725, 118/733
• US Class Current: 118/725
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4558 Perforated rings
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases

Abstract

In order to prevent deposition of a reaction byproduct on the peripheries of reaction gas introduction holes, an annular inert gas injection member having a number of inert gas injection holes is provided around the reaction gas introduction holes. An inert gas is injected from inert gas injection holes toward an exhaust passage. This inert gas promotes a flow of an exhaust gas from a reaction space and forcibly flows toward the exhaust passage. Thus, a reaction byproduct contained in the exhaust gas is not remarkably deposited in the vicinity of the peripheries of the reaction gas introduction holes but quickly discharged into the exhaust passage. Thus, the reaction byproduct is hardly deposited around the reaction gas introduction holes.

Claims

1. A chemical vapor deposition treatment system for forming a film having a prescribed composition on a major surface of a substrate to be treated, said chemical vapor deposition treatment system comprising:

(a) substrate support means for supporting said substrate while heating the same;

(b) a reaction housing receiving said substrate and said substrate support means, said reaction housing defining a reaction space facing said major surface, and being provided with an exhaust passage communicating with said reaction space;

(c) reaction gas introduction means facing said major surface of said substrate and having a reaction gas introduction hole being opened toward said major surface of said substrate;

(d) inert gas introduction means being provided around said reaction gas introduction means and having an inert gas injection hole being opened toward said exhaust passage;

(e) reaction gas supply means being coupled to said reaction gas introduction means for supplying a reaction gas into said reaction space from said reaction gas introduction hole;

(f) inert gas supply means being coupled to said inert gas introduction means for injecting an inert gas toward said exhaust passage through said inert gas injection hole; and

(g) exhaust means being coupled to said exhaust passage for discharging an exhaust gas resulting from said reaction gas and said inert gas through said exhaust passage, wherein;

said inert gas injection hole is opened toward said exhaust passage in a boundary between said reaction space and said exhaust passage; and

said reaction housing comprises;

(b-1) a tapered wall surface having a circle enclosing a periphery of said reaction space as a lower edge and gradually spreading from said gas introduction hole along a direction away from said major surface, and said exhaust passage is provided along said tapered wall surface.

2. A chemical vapor deposition treatment system in accordance with claim 1, wherein:

said inert gas supply means comprises;

(f-1) inert gas generation means for generating a pressurized inert gas; and

(f-2) mass flow control means being interposed between said inert gas generation means and said inert gas introduction means for controlling the flow rate of said pressurized inert gas and supplying the same to said inert gas introduction means.

3. A chemical vapor deposition treatment system in accordance with claim 1, wherein:

said reaction gas introduction means comprises;

(c-1) a disk member being arranged in parallel with said major surface and provided with said reaction gas introduction hole;

said inert gas introduction means comprises;

(d-1) a flange member being integrated with said disk member for enclosing the periphery of said disk member and provided therein with a guide hole for guiding said inert gas; and

(d-2) a hollow ring being arranged on said flange member to enclose the periphery of said flange member and having a hollow space communicating with said guide hole; and

said inert gas injection hole is provided in said hollow ring to communicate with said hollow space.

4. A chemical vapor deposition treatment system in accordance with claim 3, wherein:

a plurality of inert gas injection holes respectively communicating with said hollow space are formed along the circumferential direction of said hollow ring substantially at regular intervals.

5. A chemical vapor deposition treatment system in accordance with claim 4, wherein:

respective ones of said plurality of inert gas injection holes are substantially in the form of circular holes.

6. A chemical vapor deposition treatment system in accordance with claim 4, wherein:

respective ones of said plurality of inert gas injection holes are substantially in the form of slit holes.

7. A chemical vapor deposition treatment system in accordance with claim 3, wherein:

said inert gas injection hole is a circular slit being formed along the circumferential direction of said hollow ring.

8. A chemical vapor deposition treatment system in accordance with claim 1, wherein:

said substrate support means comprises;

(a-1) means for supporting said substrate to downwardly direct said major surface;

said inert gas is a first inert gas;

said inert gas supply means is a first inert gas supply means; and

said reaction housing is provided therein with an inert gas introduction passage for injecting a second inert gas into said reaction housing from about a side portion of said major surface toward said boundary between said reaction space and said exhaust passage;

said treatment system further comprising;

(h) second inert gas supply means being coupled to said inlet gas introducing passage in an exterior of said reaction housing for supplying said second inert gas into said inert gas introduction passage.

9. A chemical vapor deposition treatment system in accordance with claim 8, wherein:

said mass flow control means is a first mass flow control means;

a first part of said pressurized inert gas is supplied to said first mass flow control means; and

said second inert gas supply means further comprises;

(h-1) second mass flow control means being interposed between said inert gas generation means and said inert gas introduction passage for receiving a second part of said pressurized inert gas while controlling the flow rate of said second part of said pressurized inert gas and supplying the same to said inert gas introduction passage as a second inert gas.

10. A chemical vapor deposition treatment system in accordance with claim 9, wherein:

said first and second mass flow control means are capable of setting the respective flow rates of said first and second parts of said pressurized inert gas at values being different from each other.

11. A chemical vapor deposition treatment system in accordance with claim 10, wherein:

(i) heating means being arranged in proximity to said exhaust passage for heating an inner wall surface of said reaction housing defining said exhaust passage.

12. A chemical vapor deposition apparatus for forming a film having a prescribed composition on a major surface of a substrate to be treated, said chemical vapor deposition apparatus comprising:

(a) substrate support means for supporting said substrate while heating the same;

(b) a reaction housing receiving said substrate and said substrate support means, said reaction housing defining a reaction space facing said major surface, and being provided with an exhaust passage communicating with said reaction space;

(c) reaction gas introduction means facing said major surface of said substrate and having a reaction gas introduction hole being opened toward said major surface of said substrate; and

(d) inert gas introduction means being provided around said reaction gas introduction means and having an inert gas injection hole being opened toward said exhaust passage;

wherein;

said reaction housing comprises;

(b-1) a tapered wall surface having a circle enclosing a periphery of said reaction space as a lower edge and gradually spreading from said gas introduction hole along a direction away from said major surface, and said exhaust passage is provided along said tapered wall surface.

13. A chemical vapor deposition treatment system for forming a film having a prescribed composition on a major surface of a substrate to be treated, said chemical vapor deposition treatment system comprising:

(a) substrate support means for supporting said substrate while heating the same;

(b) a reaction housing receiving said substrate and said substrate support means, said reaction housing defining a reaction space facing said major surface, and being provided with an exhaust passage communicating with said reaction space;

(c) reaction gas introduction means facing said major surface of said substrate and having a reaction gas introduction hole being opened toward said major surface of said substrate;

(d) rectification means being provided in said reaction housing and having a wall surface for converting a flow of an exhaust gas resulting from said reaction gas from said reaction space to said exhaust passage to a laminar flow;

(e) reaction gas supply means being coupled to said reaction gas introduction hole for supplying a reaction gas into said reaction space from said reaction gas introduction hole; and

(f) exhaust means being coupled to said exhaust passage for discharging said exhaust gas through said exhaust passage.

14. A chemical vapor deposition treatment system in accordance with claim 13, wherein:

said reaction housing is provided on a part thereof with a substrate carrier passage communicating with said reaction space for introducing said substrate from the exterior of said reaction housing into said reaction housing and discharging said substrate from the interior of said reaction housing to said exterior;

said substrate carrier passage has;

a first opening being opened in the interior of said reaction housing; and

a second opening being opened in said exterior of said reaction housing;

said rectification means comprises;

(d-1) a movable portion covering said first opening; and

(d-2) a fixed portion being fixed around said gas introduction means in a position avoiding said first opening;

said treatment system further comprising;

(g) driving means being coupled to said movable portion for opening/closing said first opening by driving said movable portion.

15. A chemical vapor deposition treatment system in accordance with claim 14, wherein:

said reaction housing comprises;

(b-1) a wall surface enclosing said first opening; and

said rectification means further comprises;

(d-3) sealing means being fixed to said movable portion for sealing a clearance between said movable portion and said wall surface when said movable portion closes said first opening.

16. A chemical vapor deposition treatment system in accordance with claim 15, wherein:

said reaction housing comprises;

(b-2) a tapered wall surface having a circle enclosing a periphery of said reaction space as a lower edge and gradually spreading from said gas introduction hole along a direction away from said major surface;

said exhaust passage is established along said tapered wall surface; and

an exhaust intake of said exhaust passage is a ring-shaped opening enclosing the periphery of said reaction space.

17. A chemical vapor deposition treatment system in accordance with claim 16, wherein:

said first opening of said substrate carrier passage is provided in proximity to a first portion of said ring-shaped opening;

said movable portion is slidably provided in proximity to said first portion of said ring-shaped opening to be capable of opening/closing said first opening; and

said fixed portion is provided in proximity to a second portion, other than said first portion, of said ring-shaped opening.

18. A chemical vapor deposition treatment system in accordance with claim 17, wherein:

said substrate support means comprises;

(a-1) means for supporting said substrate to downwardly direct said major surface; and

said reaction housing is provided therein with an inert gas injection passage for injecting an inert gas into said reaction housing from above a side portion of said major surface toward a boundary between said reaction space and said exhaust passage;

said treatment system further comprising;

(h) inert gas supply means being coupled to said inert gas injection passage for supplying said inert gas into said inert gas injection passage.

19. A chemical vapor deposition treatment system in accordance with claim 18, wherein:

said inert gas supply means comprises;

(h-1) inert gas generation means for generating a pressurized inert gas; and

(h-2) mass flow control means being interposed between said inert gas generation means and said inert gas injection means for controlling the flow rate of said pressurized inert gas and supplying the same to said inert gas injection means.

20. A chemical vapor deposition treatment system in accordance with claim 19, further comprising:

(i) heating means for heating an inner wall surface of said reaction housing defining said exhaust passage.

21. A chemical vapor deposition apparatus for forming a film having a prescribed composition on a major surface of a substrate to be treated, said chemical vapor deposition apparatus comprising:

(a) substrate support means for supporting said substrate while heating the same;

(b) a reaction housing receiving said substrate and said substrate support means, said reaction housing defining a reaction space facing said major surface, and being provided with an exhaust passage communicating with said reaction space;

(c) gas introduction means facing said major surface of said substrate and having a reaction gas introduction hole being opened toward said surface of said substrate; and

(d) rectification means being provided in said reaction housing for converting a flow of an exhaust gas result from said reaction gas from said reaction space to said exhaust passage to a laminar flow.