Contactless real-time in-situ monitoring of a chemical etching process

• US 5,338,390 A
• Filed: 12/04/1992
• Issued: 08/16/1994
• Est. Priority Date: 12/04/1992
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Li, Leping, Barbee, Steven G., Ratzlaff, Eugene H., Heinz, Tony F.
• Primary Examiner(s): DANG, THI D
• Application Number:
  US07/985,413
• Time in Patent Office: 620 Days
• Field of Search: 156/627, 204/129.2
• US Class Current: 216/86
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: G01N 2291/0231 Composite or layered materials
• CPC Class Codes: G01N 2291/2694 Wings or other aircraft parts
• CPC Class Codes: G01N 29/348 with frequency characteristics, e.g. single frequency signals, chirp signals measuring frequency of mechanical vibrations or acoustic waves in general G01H1/06, G01H3/04; measuring frequency or analysing frequency spectra G01R23/00
• CPC Class Codes: G01N 29/42 by frequency filtering or by tuning to resonant frequency
• CPC Class Codes: G03F 7/3028 characterised by means for on-wafer monitoring of the processing
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, said at least two electrodes being proximate to but not in contact with the at least one wafer; and monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.

Claims

1. A contactless method for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath, said method comprising the steps of:

a) providing two conductive electrodes in the wet chemical bath, the two electrodes being proximate to but not in contact with the at lest one wafer and further wherein each of the electrodes is positioned on an opposite side of the at least one wafer; and

b) monitoring an impedance between the two electrodes, wherein a prescribed change in the impedance is indicative of a prescribed condition of the etching process.

3. The method of claim 1, wherein the prescribed condition in step b) comprises an etching end point.

2. A contactless method for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath, said method comprising the steps of:

a) providing at least two conductive electrodes in the wet chemical bath, the at least two electrodes being proximate to but not in contact with the at least one wafer; and

b) monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process, wherein the monitoring of an electrical characteristic comprises monitoring impedance and further wherein the prescribed change comprises a prescribed change in impedance.

4. A contactless method for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath, said method comprising the steps of:

a) providing at least two conductive electrodes in the wet chemical bath, the at least two electrodes being proximate to but not in contact with the at least one wafer, wherein the at least two electrodes comprise two electrodes and further wherein each of the electrodes is positioned on an opposite side of the at least one wafer; and

b) monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process.

5. A contactless real-time in-situ chemical etch monitor for providing an indication of a prescribed condition of an etching process during etching of at least one wafer in a wet chemical etchant bath, said monitor comprising:

a) at lest two conductive electrodes, wherein said at least two electrodes comprise two electrodes;

b) means for positioning said at least two conductive electrodes inside the wet chemical etchant bath to be proximate to but not in contact with the at least one wafer and further wherein each of the electrodes is positioned on an opposite side of the at least on wafer; and

c) means for monitoring an impedance between said at least two electrodes, wherein a prescribed change in the impedance is indicative of the prescribed condition of the etching process.

6. A contactless real-time in-situ chemical etch monitor for providing an indication of a prescribed condition of an etching process during etching of at least one wafer in a wet chemical etchant bath, said monitor comprising:

a) at least two conductive electrodes;

b) means for positioning said at least two conductive electrodes inside the wet chemical etchant bath to be proximate to but not in contact with the at least one wafer; and

c) means for monitoring an electrical characteristic between said at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of the prescribed condition of the etching process, wherein said monitoring means comprises means for monitoring an impedance and further wherein the prescribed change comprises a prescribed change in impedance.

7. A contactless real-time in-situ chemical etch monitor for providing an indication of a prescribed condition of an etching process during etching of at least one wafer in a wet chemical etchant bath, said monitor comprising:

a) at least two conductive electrodes, wherein said at least two electrodes comprise two electrodes;

b) means for positioning said at least two electrodes inside the wet chemical etchant bath to be proximate to but not in contact with the at least one wafer and further wherein each of the electrodes is positioned on an opposite side of the at least one wafer; and

c) means for monitoring an electrical characteristic between said at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of the prescribed condition of the etching process.

8. A contactless method for real-time in-situ control of an etching process during etching of at least one wafer in an etch station, the etch station having a wet chemical etchant bath, said method comprising the steps of:

a) providing two conductive electrodes in the wet chemical bath, the two electrodes being proximate to but not in contact with the at least one wafer, and further wherein each of the electrodes is positioned on an opposite side of the at least one wafer;

b) monitoring an impedance between the two electrodes, wherein a prescribed change in the impedance is indicative of a prescribed condition of the etching process; and

c) controlling the etching process in response to the monitoring of the prescribed change in the impedance.

10. The method of claim 8, wherein the prescribed condition in step b) comprises an etching end point.

9. A contactless method for real-time in-situ control of an etching process during etching of at least one wafer in an etch station, the etch station having a wet chemical etchant bath, said method comprising the steps of:

a) providing at least two conductive electrodes in the wet chemical bath, the at least two electrodes being proximate to but not in contact with the at least one wafer;

b) monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process, wherein monitoring of an electrical characteristic comprises monitoring impedance and further wherein the prescribed change comprises a prescribed change in impedance; and

c) controlling the etching process in response to the monitoring of the prescribed change in the electrical characteristic.

11. A contactless method for real-time in-situ control of an etching process during etching of at least one wafer in an etch station, the etch station having a wet chemical etchant bath, said method comprising the steps of:

a) providing at least two conductive electrodes in the wet chemical bath, the at least two electrodes being proximate to but not in contact with the at least one wafer, wherein the at least two electrodes comprise two electrodes and further wherein each of the electrodes is positioned on an opposite side of the at least one wafer;

b) monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and

c) controlling the etching process in response to the monitoring of the prescribed change in the electrical characteristic.

12. An etch station having contactless real-time in-situ control of an etching process during etching of at least one wafer in a wet chemical etchant bath, said etch station comprising:

a) at least two conductive electrodes, wherein said at least two electrodes comprise two electrodes;

b) means for positioning said at least two conductive electrodes inside the wet chemical etchant bath to be proximate to but not in contact with the at least one wafer and further wherein each of the electrodes is positioned on an opposite side of the at least one wafer;

c) means for monitoring an impedance between said at least two electrodes, wherein a prescribed change in the impedance is indicative of a prescribed condition of the etching process; and

d) means for controlling the etching process in response to the monitoring of the prescribed change in the impedance.

13. An etch station having contactless real-time in-situ control of an etching process during etching of at least one wafer in a wet chemical etchant bath, said etch station comprising:

a) at least two conductive electrodes;

b) means for positioning said at least two conductive electrodes inside the wet chemical etchant bath to be proximate to but not in contact with the at least one wafer;

c) means for monitoring an electrical characteristic between said at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process, wherein said monitoring means comprises means for monitoring an impedance and further wherein the prescribed change comprises a prescribed change in impedance; and

d) means for controlling the etching process in response to the monitoring of the prescribed change in the electrical characteristic.

14. An etch station having contactless real-time in-situ control of an etching process during etching of at least one wafer in a wet chemical etchant bath, said etch station comprising:

a) at least tow conductive electrodes, wherein said at least two electrodes comprise two electrodes;

b) means for positioning said at least two conductive electrodes inside the wet chemical etchant bath to be proximate to but not in contact with the at least one wafer and further wherein each of the electrodes is positioned on an opposite side of the at least one wafer;

c) means for monitoring an electrical characteristic between said at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; and

d) means for controlling the etching process in response to the monitoring of the prescribed change in the electrical characteristic.