Device and method for depositing metal oxide films

• US 5,338,422 A
• Filed: 09/29/1992
• Issued: 08/16/1994
• Est. Priority Date: 09/29/1992
• Status: Expired due to Fees

• Current Assignee: BOC Group Pty Limited (Linde Plc)
• Original Assignee: BOC Group Pty Limited (Linde Plc)
• Inventors: Belkind, Abraham I., Wamboldt, Leonard, Wolfe, Jesse D.
• Primary Examiner(s): Pal, Asok
• Application Number:
  US07/953,491
• Time in Patent Office: 686 Days
• Field of Search: 204/298.21, 204/298.22, 204/298.12, 204/298.16, 204/298.19, 204/192.12
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: H01J 37/3405 Magnetron sputtering

Abstract

A triple magnetron array positioned inside a vacuum chamber is provided. The array includes a planar magnetron situated above dual rotatable unbalanced cylindrical magnetrons. The planar magnetron is partially shielded from the dual magnetrons by a baffle. An inert gas outlet is positioned near the planar magnetron target whereas oxygen gas outlets are positioned near the cylindrical magnetrons. In this fashion, the reactive gas flow to the planar magnetron is restricted. The system is particularly well suited for forming metal oxide films, such as titanium oxide, that are difficult to deposit by conventional means. The oxygen flow rate is controlled so that the planar magnetron operates in the metallic mode.

Claims

1. A method of forming a thin film of metal oxide compound on a substrate within an evacuated chamber, said method comprising the steps of:

providing one or more first magentraons each having a metal sputtering material on an outer surface thereof;

positioning said substrate opposite said one or more first magentrons so that sputtered material from each magnetron is deposited onto said substrate;

causing an inert gas to flow into said vacuum chamber and to exit near said one or more first magnetrons;

providing one or more second magentrons each comprising of a rotatable cylindrical magnetron having a metal sputtering material on an outer surface thereof, wherein said one or more second magnetrons are positioned between said one or more first magnetrons and said substrate;

causing oxygen gas to flow into said vacuum chamber and to exit near said one or more second magnetrons wherein the flow rate of the oxygen is maintained at an effective rate to enable said one or more first magnetrons to sputter substantially in the metallic mode;

applying potential to said one or more first magnetrons to cause sputtering; and

applying potential to said one or more second magnetrons.

2. The method as defined in claim 1 further comprising the step of positioning a baffle between said first magnetrons and said second magnetrons.

3. The method as defined in claim 1 wherein the step of providing one or more first magnetrons comprises of providing one or more planar magnetrons and wherein the step of providing one or more second magnetrons comprises of providing dual cylindrical magnetrons.

4. The method as defined in claim 3 wherein the step of providing one or more planar magnetrons comprises of providing one planar magnetron and wherein the method further comprises the step of positioning a baffle between said planar magnetron and said dual cylindrical magnetrons.

5. The method as defined in either claim 2 or 4 wherein the metal sputtering material comprises titanium.

6. The method as defined in either claim 2 or 4 wherein the metal sputtering material of said first and second magnetrons comprises of one or more metals selected from the group consisting of aluminum, zinc, silicon, tin, tantalu, tungsten, zirconium, vanadium, chromium, bismuth, and niobium.

7. The method as defined in either claim 2 or 4 further comprising the step of causing inert gas to flow into said vacuum chamber and to exit near said second magnetrons.

8. A device for forming a thin layer of metal oxide film on a substrate comprising of:

a vacuum chamber;

one or more first magnetrons situated inside said vacuum chamber each having a metal sputtering material on an outer surface thereof wherein said one or more magnetrons are positioned so that materials sputtered therefrom are deposited onto said substrate;

one or more inert as outlets situated near said one or more first magnetrons;

one or more second magnetrons each comprising of a rotatable cylindrical magnetron having a metal sputtering material on an outer surface thereof wherein each second magnetron is positioned inside said vacuum chamber and wherein each second magnetron is positioned between said one or more first magnetrons and said substrate;

one or more oxygen outlets situated near said one or more second magnetrons; and

means for providing oxygen into said vacuum chamber at an effective flow rate to enable said one or more first magnetrons to operate substantially in the metallic mode.

9. The device as defined in claim 8 further comprising of baffle means for restricting oxygen flow from said one or more oxygen outlets to said first magnetrons.

10. The device as defined in claim 9 wherein said one or more first magnetrons comprise one or more planar magnetrons and wherein said one or more second magnetrons comprise dual cylindrical magnetrons.

11. The device as defined in claim 10 wherein said metal sputtering material comprises titanium.

12. The device as defined in claim 10 wherein said metal sputtering material comprises of one or more metals selected from the group consisting of aluminum, zinc, silicon, tin, tantalum, tungsten, zirconium, vanadium, chromium, bismuth, and niobium.

13. The device as defined in claim 11 further comprising means for regulating oxygen flow into a region near said one or more second magnetrons.

14. The device as defined in claim 12 further comprising means for regulating oxygen flow into a region near said one or more second magnetrons.

15. The device as defined in claim 10 wherein said one or more first magnetrons comprises a planar magnetron.