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Thin film transistor with three dimensional multichannel structure

  • US 5,338,959 A
  • Filed: 03/30/1993
  • Issued: 08/16/1994
  • Est. Priority Date: 03/30/1992
  • Status: Expired due to Fees
First Claim
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1. A thin film transistor gate structure comprising:

  • (a) a substrate;

    (b) a plurality of spaced apart semiconductive strips formed substantially parallel to one another and to said substrate, each said strip having a channel portion;

    (c) a gate insulating layer surrounding a cross-sectional periphery of each said channel portion of each said semiconductive strip; and

    (d) a gate electrode surrounding said gate insulating layer, a portion of said gate electrode being disposed on said substrate.

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