Backup battery power controller having channel regions of transistors being biased by power supply or battery

• US 5,341,034 A
• Filed: 02/11/1993
• Issued: 08/23/1994
• Est. Priority Date: 02/11/1993
• Status: Expired due to Term

• Current Assignee: Benchmarq Microelectronics, Inc. (Texas Instruments, Inc.)
• Original Assignee: Benchmarq Microelectronics, Inc. (Texas Instruments, Inc.)
• Inventors: Matthews, Wallace E.
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): TRAN, TOAN V
• Application Number:
  US08/016,440
• Time in Patent Office: 558 Days
• Field of Search: 257/392, 257/393, 257/204, 257/206, 257/208, 257/351, 257/124, 257/173, 307/296.1, 307/296.2, 307/296.5, 307/296.8, 307/350, 307/355, 307/362, 307/66, 307/572, 365/229
• US Class Current: 327/534
• CPC Class Codes: H02J 9/061 for DC powered loads

Abstract

A power control circuit (10) is operable to select between a backup battery (14) on a terminal (16) and a primary power supply voltage on a terminal (12) to output a voltage to a powered device (20). The two voltages are compared by a comparator (28) that drives a well bias node (44) with transistors (36) and (38). The comparator (28) selects the highest of two voltages on either the battery supply terminal (16) or the power supply terminal (12) to power the node (44), which node (44) is then connected to the wells of switching transistors (40) and (42) which are operable to select the battery terminals (16) in the event of a fail of the power supply on terminal (12). This decision is made with a power failure device (20). In the event that both the primary power supply voltage falls below a predetermined threshold and the battery supply voltage is at a higher level, the battery (14 ) is selected for output on the line (18).

Claims

1. A power supply device for selecting between a primary power supply and a backup power supply to provide power on an output terminal to a powered device, comprising:

a power fail device for comparing the voltage on the primary power supply to an internal threshold voltage and generating a power fail signal when the voltage of the primary power supply falls below said internal threshold voltage;

a switching device for connecting either the primary power supply or the backup power supply to the output terminal, said switching device having;

a first MOS transistor having a channel region of a first conductivity type material and a source/drain region on either side thereof, said source/drain region of a second conductivity type material opposite to said first conductivity type material, said first MOS transistor having a gate electrode disposed over said channel region and connected to a first control signal with the source/drain path of said first MOS transistor connected between the primary power supply and the output terminal,

a second MOS transistor having a channel region of said first conductivity type material and a source/drain region on either side of said channel region of said second conductivity type material and a gate electrode disposed over said channel region and connected to a second control signal, the source/drain path of said second MOS transistor connected between the backup power supply and the output terminal,

said channel regions of said first and second MOS transistors in a common region of first conductivity material,

a control device for generating said first and second control signals in response to receiving said power fail signal such that said first MOS transistor conducts in the absence of said power fail signal and said second MOS transistor conducts in the presence of said power fail signal, and

a channel bias circuit for biasing said channel regions of said first and second MOS transistors to the higher voltage one of said primary power supply or the backup power supply.

2. The power supply device of claim 1, wherein said channel bias circuit comprises:

a comparator for comparing the voltage of the backup power supply and the voltage of the primary power supply and generating a first comparator output signal when the primary power supply is greater than the backup power supply, and a second comparator output signal when the voltage of the backup power supply is greater than the voltage of the primary power supply;

a third MOS transistor having a channel region of said first conductivity type material, a source/drain region of said second conductivity type on either side of said channel region and a gate electrode disposed over said channel region and connected to said first comparator output signal and operable to turn on said third MOS transistor in response to the generation of said first comparator signal, the source/drain path of said third MOS transistor connected between the primary power supply and a channel bias node; and

a fourth MOS transistor having a channel region of said first conductivity type, a source/drain region of said second conductivity type on either side of said channel region and a gate electrode disposed over said channel region and connected to said second comparator output signal and operable to turn on said fourth MOS transistor in the presence of said second comparator output signal, the source/drain path of said fourth MOS transistor connected between the backup power supply and said channel bias node;

said channel bias node connected to said channel regions of said first and second MOS transistors.

3. The power supply device of claim 2, wherein said channel regions of said third and fourth MOS transistors are formed in a common region and are biased by the voltage on said channel bias node.

4. The power supply device of claim 2, wherein said power fail device is operable to inhibit the generation of said power fail signal unless said second comparator output signal is generated.

5. The power supply device of claim 4, wherein said power fail device includes logic drawing circuitry for generating said power fail signal, said logic driving circuitry powered from the voltage on said channel bias node.

6. The power supply device of claim 1, wherein the source/drain region of said first and second MOS transistors connected to said output terminal comprises a common source region of said second conductivity type material.