Method for wear leveling in a flash EEPROM memory

• US 5,341,339 A
• Filed: 11/01/1993
• Issued: 08/23/1994
• Est. Priority Date: 10/30/1992
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Wells, Steven E.
• Primary Examiner(s): Fears, Terrell W.
• Application Number:
  US08/145,654
• Time in Patent Office: 295 Days
• Field of Search: 365/200, 365/189.01, 365/230.01, 365/149, 365/900, 365/185, 365/218
• US Class Current: 365/185.11
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 2212/1036 Life time enhancement
• CPC Class Codes: G06F 2212/7211 Wear leveling
• CPC Class Codes: G06F 3/0601 Interfaces specially adapted for storage systems
• CPC Class Codes: G06F 3/0664 at device level, e.g. emulation of a storage device or system
• CPC Class Codes: G11C 16/16 for erasing blocks, e.g. arrays, words, groups

Abstract

In a process for cleaning up a flash EEPROM memory array separated into blocks which may be separately erased, in which process all valid data is first written to other blocks of the array, and then the block is erased, the improvement including the step of determining a block to clean up based on a comparison of the number of invalid sectors each block includes and the number of switching operations which each block has undergone.

Claims

1. In a process for cleaning up a flash EEPROM array separated into blocks of memory cells which blocks store data in sectors which contain valid and invalid data, and which blocks may be separately erased, and in which process for cleaning up all valid data is first written to other blocks of the array, and then the block is entirely erased, the improvement comprising:

the step of determining a block to clean up based on a comparison of the number of invalid sectors each block includes and the number of switching operations which each block has undergone.

2. In a process for cleaning up a flash EEPROM array as claimed in claim 1, the step of determining a block to clean up based on a comparison of the number of invalid sectors each block includes and the number of switching operations which each block has undergone, comprising:

comparing the number of invalid sectors on each block to the number of invalid sectors on all other blocks,

assigning a value to each block derived from the comparison of the number of invalid sectors,

comparing the number of switching operations each block has undergone to the number of switching operations each other block has undergone,

assigning a value to each block derived from the comparison of the number of switching operations each other block has undergone, and

totaling the values for each block to determine a block to be selected for cleanup.

3. In a process for cleaning up a flash EEPROM array as claimed in claim 2, the step of determining a block to clean up based on a comparison of the number of invalid sectors each block includes and the number of switching operations which each block has undergone, further comprising:

weighting the value derived by comparing the number of invalid sectors on each block to the number of invalid sectors on all other blocks, and

weighting the value derived by comparing the number of switching operations each block has undergone to the number of switching operations each other block has undergone.

4. In a process for cleaning up a flash EEPROM array as claimed in claim 3, the steps of weighting the value derived by comparing the number of invalid sectors on each block to the number of invalid sectors on all other blocks weight, and weighting the value derived by comparing the number of switching operations each block has undergone to the number of switching operations each other block has undergone being chosen to favor the selection of a block having undergone a lesser number of switching operations.

5. In a process for cleaning up a flash EEPROM array as claimed in claim 3, the step of determining a block to clean up based on a comparison of the number of invalid sectors each block includes and the number of switching operations which each block has undergone, comprising:

the steps of weighting the value derived by comparing the number of invalid sectors on each block to the number of invalid sectors on all other blocks weight, and weighting the value derived by comparing the number of switching operations each block has undergone to the number of switching operations each other block has undergone being chosen to favor the selection of a block having a greater number of invalid sectors whenever a cleanup operation is required to provide space for additional writing to the flash EEPROM array, and

the steps of weighting the value derived by comparing the number of invalid sectors on each block to the number of invalid sectors on all other blocks weight, and weighting the value derived by comparing the number of switching operations each block has undergone to the number of switching operations each other block has undergone being chosen to favor the selection of a block having undergone a lesser number of switching operations whenever a cleanup is not required but time for such a cleanup is available.

6. In a process for cleaning up a flash EEPROM array as claimed in claim 5, in which the steps of weighting the value derived by comparing the number of invalid sectors on each block to the number of invalid sectors on all other blocks weight, and weighting the value derived by comparing the number of switching operations each block has undergone to the number of switching operations each other block has undergone are chosen to favor the selection of a block having undergone a lesser number of switching operations whenever a cleanup is not required but time for such a cleanup is available, being trigger by a difference in switching operations of 500 or greater.

7. In a process for cleaning up a flash EEPROM array as claimed in claim 3, the step of determining a block to clean up based on a comparison of the number of invalid sectors each block includes and the number of switching operations which each block has undergone, comprising:

the steps of weighting the value derived by comparing the number of invalid sectors on each block to the number of invalid sectors on all other blocks weight with a value of 0.8, and weighting the value derived by comparing the number of switching operations each block has undergone to the number of switching operations each other block has undergone with a value of minus 0.2 whenever a cleanup operation is required to provide space for additional writing to the flash EEPROM array, and

the steps of weighting the value derived by comparing the number of invalid sectors on each block to the number of invalid sectors on all other blocks weight with a value of 0.2, and weighting the value derived by comparing the number of switching operations each block has undergone to the number of switching operations each other block has undergone with a value of minus 0.8 whenever a cleanup is not required but time for such a cleanup is available.

8. In a process for cleaning up a flash EEPROM array as claimed in claim 3, the steps of weighting the value derived by comparing the number of invalid sectors on each block to the number of invalid sectors on all other blocks weight, and weighting the value derived by comparing the number of switching operations each block has undergone to the number of switching operations each other block has undergone being chosen to favor the selection of a block having a greater number of invalid sectors.