Method of bonding a semiconductor substrate to a support substrate and structure therefore

• US 5,341,979 A
• Filed: 09/03/1993
• Issued: 08/30/1994
• Est. Priority Date: 09/03/1993
• Status: Expired due to Fees

• Current Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Gupta, Debabrata
• Primary Examiner(s): Heinrich, Samuel M.
• Application Number:
  US08/115,616
• Time in Patent Office: 361 Days
• Field of Search: 228/110.1, 228/111, 228/111.5, 228/180.22, 228/56.3, 228/254, 427/123, 427/383.7
• US Class Current: 228/111
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/11472 Profile of the lift-off mask
• CPC Class Codes: H01L 2224/13016 in side view
• CPC Class Codes: H01L 2224/13018 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/12 Structure, shape, material or disposition of the bump connectors prior to the connecting process
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A method and means of bonding a semiconductor die (10) to a support substrate (35) using a thermosonic bonding apparatus (50). The semiconductor die (10) has bonding pads (14, 15, 17) on a first major surface (12), and the support substrate (35) has contact pads (46, 47, 44) on a principal surface (43). Hourglass shaped gold bumps (30) are formed on bonding pads (14, 15, 17). A second major surface (13) of semiconductor die (10) is secured to a thermosonic tool/end-effector (52), and the support substrate (35) is secured to a substrate chuck (48). The hourglass shaped gold bumps (30) are mated with the contact pads ( 46, 47, 44 ) on the support substrate (35). A bond is thermosonically formed between the gold bumps (30) and the contact pads (46, 47, 44).

Claims

1. A method of bonding a semiconductor substrate to a support substrate, comprising the steps of:

providing the support substrate, wherein the support substrate has a first principal surface and at least one contact structure on the first principal surface;

providing the semiconductor substrate, wherein the semiconductor substrate has a first major surface, a second major surface, and at least one bonding pad on the first major surface, the at least one bonding pad corresponding to the at least one contact structure;

covering the at least one bonding pad and a portion of the first major surface with a first layer of photoresist;

forming an opening in the first layer of photoresist, wherein the opening has a mouth and exposes the at least one bonding pad;

narrowing the mouth of the opening;

coating the first layer of photoresist with a second layer of photoresist, wherein coating the first layer of photoresist fills the narrowed mouth of the opening;

re-opening the opening, wherein the reopened opening has an hourglass shape;

filling the hourglass shaped opening with an electrically conductive material;

removing the first and the second layers of photoresist, wherein an hourglass shaped bump is formed on the at least one bonding pad; and

bonding the electrically conductive material filling the hourglass shaped opening to the at least one contact structure.

2. A method of bonding a semiconductor substrate to a support substrate as claimed in claim 1, wherein the step of narrowing the mouth of the opening includes partially liquefying a portion of the first layer of photoresist.

3. A method of bonding a semiconductor substrate to a support substrate as claimed in claim 1, wherein the step of narrowing the mouth of the opening includes heating a top surface of the first layer of photoresist.

4. A method of bonding a semiconductor substrate to a support substrate as claimed in claim 1, wherein the step of filling the hourglass shaped opening with an electrically conductive material includes using gold as the electrically conductive material, wherein the gold acquires the hourglass shape of the opening.

5. A method of bonding a semiconductor substrate to a support substrate as claimed in claim 1, wherein the step of providing the support substrate includes the steps of:

providing a base plate;

providing a conductive slug, the conductive slug having a first major surface, a second major surface, and being thermally and electrically conductive;

mounting the conductive slug to the base plate, wherein the second major surface of the conductive slug is bonded to the base plate;

surrounding the conductive slug with a dielectric material;

forming at least one via through the dielectric material, wherein the at least one via exposes a portion of the first major surface of the conductive slug; and

filling the at least one via with a conductive material.

6. A method of bonding a semiconductor substrate to a support substrate as claimed in claim 1, further including thermosonically bonding the electrically conductive material filling the hourglass shaped opening to the at least one contact structure.

7. A method of bonding a semiconductor substrate to a support substrate as claimed in claim 6, wherein the step of bonding the electrically conductive material includes:

providing a thermosonic flip-chip bonder, wherein the thermosonic flip-chip bonder has a thermosonic horn;

mounting a thermosonic tool/end-effector to the thermosonic horn;

temporarily securing a portion of the second major surface of the semiconductor substrate to the thermosonic tool/end-effector;

placing the hourglass shaped bump on the at least one bonding pad in contact with the at least one contact structure;

moving the thermosonic tool/end-effector in a direction parallel to the second major surface of the portion of the semiconductor substrate; and

separating the portion of the second major surface of the semiconductor substrate from the thermosonic tool/end-effector.

8. A method of attaching a first substrate to a second substrate, comprising the steps of:

providing the first substrate, wherein the first substrate has a first major surface, a second major surface, and an electrically conductive layer on at least a portion of the first major surface;

photolithographically forming at least one hourglass shaped metallic bump on a portion of the electrically conductive layer;

providing the second substrate, wherein the second substrate includes at least one contact structure having a principal surface, and comprises a base plate having a metallic pedestal mounted thereon and a dielectric material surrounding a portion of the metallic pedestal; and

thermosonically bonding the hourglass shaped metallic bump to the at least one contact structure.

9. A method of attaching a first substrate to a second substrate as claimed in claim 8, further including selecting the first substrate from the group consisting of gallium arsenide, silicon, germanium, or indium phosphide.

10. A method of attaching a first substrate to a second substrate as claimed in claim 8, wherein the step of photolithographically forming at least one hourglass shaped metallic bump on a portion of the electrically conductive layer further comprises:

forming a first layer of photoresist over the first major surface of the first substrate and on the electrically conductive layer;

forming an opening in the first layer of photoresist, the opening exposing a portion of the electrically conductive layer;

partially fluidizing the first layer of photoresist;

covering the first layer of photoresist with a second layer of photoresist;

removing a portion of the second layer of photoresist and the first layer of photoresist above the portion of the electrically conductive layer previously exposed such that an hourglass shaped contact opening is formed;

filling the hourglass shaped contact opening with a conductive material; and

removing a remaining portion of the first and the second layers of photoresist.

11. A method of attaching a first substrate to a second substrate as claimed in claim 10, wherein the step of forming an opening in the first layer of photoresist includes forming a cavity in a portion of the first layer of photoresist above the bonding pad region, the cavity having an entrance.

12. A method of attaching a first substrate to a second substrate as claimed in claim 11, wherein the step of partially fluidizing the first layer of photoresist includes heating the first layer of photoresist from a top surface such that the top surface flows and narrows the entrance.

13. A method of attaching a first substrate to a second substrate as claimed in claim 10, includes filling the at least one hourglass shaped contact opening by electroplating a metal in the at least one hourglass shaped contact opening.

14. A method of attaching a first substrate to a second substrate as claimed in claim 10, wherein the step of filling the at least one hourglass shaped contact opening with a conductive material includes forming the at least one hourglass shaped contact opening from gold.

15. A method of attaching a first substrate to a second substrate as claimed in claim 8, wherein the step of thermosonically bonding the hourglass shaped metallic bump to the at least one contact structure further comprises:

providing a thermosonic flip-chip bonder, wherein the thermosonic flip-chip bonder has a thermosonic horn;

coupling the first substrate to the thermosonic horn;

contacting the at least one hourglass shaped metallic bump with the at least one contact structure, wherein a mass ranging between approximately 50 grams and 1,500 grams is applied to the hourglass shaped bump;

moving the first substrate in a direction substantially parallel to the first major surface;

decoupling the first substrate from the thermosonic horn.