Dry etching method

• US 5,342,481 A
• Filed: 02/14/1992
• Issued: 08/30/1994
• Est. Priority Date: 02/15/1991
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Kadomura, Shingo
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US07/835,324
• Time in Patent Office: 928 Days
• Field of Search: 156/643, 156/646, 156/659.1, 156/651, 156/653, 156/660, 156/668, 403/5
• US Class Current: 216/46
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/32139 using masks

Abstract

A method for effecting anisotropic etching of a layer of a material without producing dimensional loss even if the photoresist is of a reverse tapered cross-sectional profile is proposed. A photoresist produced from a chemical amplification negative type photoresist tends to be of a reversely tapered cross-sectional profile after development due to its sensitization properties. According to the present invention, discharge reaction products yielded in a plasma are deposited on an inclined sidewall surface of a photoresist pattern for trimming or shaping the sidewall surface so that the sidewall surface will be substantially vertical. For example, Si_x N_y, Si_x N_y Cl_z, etc. may be deposited from a SiCl₄ /N₂ mixed gas, sulfur may be deposited from a mixed gas of S₂ F₂ /H₂ S and a carbonaceous polymer may be deposited from a C₂ Cl₃ F₃ gas. Such profile correction may be effected before etching the layer, or simultaneously with the etching under conditions in which the deposition process occurs competitively with the etching process. According to the present invention, dimensional loss may be prevented effectively from occurring during the etching of a layer of an Si-based material or an Al-based material in which the radical mode is a prevailing etching mode.

Claims

1. A dry etching method for etching a layer of a material using a resist pattern having an inclined sidewall section formed by a pattern width decreased from a top surface towards a bottom surface along a film thickness of the pattern, comprising:

forming discharge reaction products and allowing the discharge reaction products to be deposited on said inclined sidewall surface for shaping said sidewall section of the mask so that said sidewall section will be substantially perpendicular to said layer, and

subsequently plasma etching said layer.

2. A dry etching method as claimed in claim 1 wherein said resist pattern is constituted by a chemical amplification negative type photoresist material.

3. A dry etching method as claimed in claim 1 wherein said layer is formed of a material etched by a mechanism having a radical mode as a prevalent etching mode.

4. A dry etching method as claimed in claim 1 wherein said discharge reaction products are at least one product selected from a group consisting of silicon compounds, sulfur and carbonaceous polymers.

5. A dry etching method for etching a layer of a material using a resist pattern having an inclined sidewall section formed by a pattern width decreased from a top surface towards a bottom surface along a film thickness of the pattern, comprising:

forming discharge reaction products and allowing the discharge reaction products to be deposited on said inclined sidewall surface for shaping said sidewall section of the mask so that said sidewall section will be substantially perpendicular to said layer, and

simultaneously plasma etching said layer.

6. A dry etching method as claimed in claim 5 wherein said resist pattern is constituted by a chemical amplification negative type photoresist material.

7. A dry etching method as claimed in claim 5 wherein said layer is formed of a material etched by a mechanism having a radical mode as a prevalent etching mode.

8. A dry etching method as claimed in claim 5 wherein said discharge reaction products are at least one from a group consisting of silicon compounds, sulfur and carbonaceous polymers.