Method of fabricating power VFET gate-refill

• US 5,342,795 A
• Filed: 11/15/1993
• Issued: 08/30/1994
• Est. Priority Date: 04/30/1992
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Kim, Tae S., Yang, Jau-Yuann, Yuan, Han-Tzong, Plumton, Donald L.
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): MASON, DAVID
• Application Number:
  US08/153,121
• Time in Patent Office: 288 Days
• Field of Search: 437/40, 437/41, 437/90, 437/107, 437/104, 437/96, 437/184, 437/133, 148/DIG. 40, 148/DIG. 56, 148/DIG. 126, 257/330-332, 257/264
• US Class Current: 438/193
• CPC Class Codes: H01L 29/207 further characterised by the doping material H01L29/2006 takes precedence
• CPC Class Codes: H01L 29/66454 Static induction transistors [SIT], e.g. permeable base transistors [PBT]
• CPC Class Codes: H01L 29/66924 with an active layer made of a group 13/15 material H01L29/66446 takes precedence
• CPC Class Codes: H01L 29/7722 using static field induced regions, e.g. SIT, PBT
• CPC Class Codes: Y10S 148/04 Dopants, special

Abstract

This is a method of forming a vertical transistor device comprising: forming an n-type first drain/source layer 42; patterning a portion of the first drain/source layer 42 to form a channel 44 and a trench; forming a p-type gate structure 46 in the trench; and forming a n-type second drain/source layer 48 over the gate structure 46 and the channel 44; contacting the gate structure 54; forming p-ohmic contact to the gate structure 56; forming n-ohmic source contact 54; and forming n-ohmic drain contact 58. Other devices and methods are also disclosed.

Claims

1. A method of forming a vertical transistor device comprising:

forming a n-type first drain/source layer over a substrate;

patterning a portion of said first drain/source layer to form a channel and a trench;

forming a p-type carbon doped gate structure in said trench;

forming a n-type second drain/source layer over said gate structure and said channel;

contacting said gate structure;

forming p-ohmic contact to said gate structure;

forming n-ohmic source contact; and

forming n-ohmic drain contact.

2. The method of claim 1, wherein said first drain/source layer is formed on a n+ substrate.

3. The method of claim 1, wherein a cap layer is formed over said second drain/source layer.

4. The method of claim 3, wherein said cap layer has n+ doping.

5. The method of claim 1, wherein said channel and said trench are formed by a dry etch process.

6. The method of claim 1, wherein said gate structure is selectively grown.

7. The method of claim 1, wherein said gate structure is grown such that the lateral growth rate is higher than the vertical growth rate.

8. The method of claim 1, wherein said contacting said gate structure is done by implanting a p+ dopant.

9. The method of claim 8, wherein said implanted p+ dopant is Be.

10. The method of claim 1, wherein said contacting said gate structure is preceded by a mesa etch process.

11. The method of claim 1, wherein said p-ohmic contact is AuZn.

12. The method of claim 1, wherein said n-ohmic contact is PdGein.

13. The method of claim 1, wherein said first drain/source layer, said gate structure, and said second drain/source layer are GaAs.