Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
First Claim
1. A microelectronic structure having a plurality of electronic devices, comprising:
- a solid-state circuit structure having at least two distinct electronic devices electrically interconnected to one another, each of the devices having at least one active region of single-crystal semiconductor material formed from a common layer of unrecrystallized bulk, epitaxially grown single-crystal semiconductor material;
a support substrate; and
insulating means disposed permanently and rigidly between the circuit structure and the support substrate, the insulating means being permanently joined to the circuit structure and electrostatically bonded to the support substrate, and including therein means for enabling the insulating means while permanently joined to the circuit structure to be electrostatically bonded to the support substrate without subjecting the active regions of the devices to a damaging electric field.
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Accused Products
Abstract
Integrated semiconductor-on-insulator (SOI) sensors and circuits which are electrostatically bonded to a support substrate, such as glass or an oxidized silicon wafer, are disclosed. The SOI sensors and SOI circuits are both formed using a novel fabrication process which allows multiple preformed and pretested integrated circuits on a silicon wafer to be electrostatically bonded to the support substrate without exposing the sensitive active regions of the electronic devices therein to a damaging electric field. The process includes forming a composite bonding structure on top of the integrated circuits prior to the bonding step. This composite structure includes a conductive layer dielectrically isolated from the circuit devices and electrically connected to the silicon wafer, which is spaced form but laterally overlaps at least the active semiconductive regions of the circuit devices. The SOI sensors each include a transducer and at least one active electronic device, which are both made at least in part from a common layer of lightly-doped single-crystal semiconductor material grown on the silicon wafer. After the bonding step, the bulk of the single-crystal wafer is removed, leaving the epitaxial layer containing the circuits and transducers. The epitaxial layer is then patterned into isolated mesas to dielectrically isolate the electronic devices. This patterning step also exposes bond pads, allowing external connections to be readily made to the sensors and circuits. Exemplary solid-state sensors disclosed herein include a capacitive accelerometer and pressure sensor.
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Citations
8 Claims
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1. A microelectronic structure having a plurality of electronic devices, comprising:
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a solid-state circuit structure having at least two distinct electronic devices electrically interconnected to one another, each of the devices having at least one active region of single-crystal semiconductor material formed from a common layer of unrecrystallized bulk, epitaxially grown single-crystal semiconductor material; a support substrate; and insulating means disposed permanently and rigidly between the circuit structure and the support substrate, the insulating means being permanently joined to the circuit structure and electrostatically bonded to the support substrate, and including therein means for enabling the insulating means while permanently joined to the circuit structure to be electrostatically bonded to the support substrate without subjecting the active regions of the devices to a damaging electric field. - View Dependent Claims (2, 3, 4)
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5. An integrated solid-state sensor, comprising:
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a solid-state transducer structure having at least one electronically detectable characteristic which varies in response to variations in a physical condition present in the local environment of the transducer, the transducer structure being made at least in part from a first layer of unrecrystallized single-crystal semiconductor material formed from a bulk silicon wafer; a solid-state electronic device having (1) at least one active region thereof formed at least in part of the first layer of single-crystal semiconductor material, (2) means for electrically interconnecting the device to the to the transducer structure, and (3) means for producing an electrical signal which varies in response to the electronically detectable characteristic of the transducer structure; a support substrate; and insulating means permanently and rigidly joined between the electronic device and the support substrate, the insulating means being electrostatically bonded to the support substrate, and including therein means for enabling the insulating means while permanently joined to the electronic device to be electrostatically bonded to the support substrate without subjecting the active region of the device to a damaging electric field. - View Dependent Claims (6, 7, 8)
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Specification