RF variable gain tuned output amplifier which maintains high Q in saturation

• US 5,343,162 A
• Filed: 04/06/1993
• Issued: 08/30/1994
• Est. Priority Date: 04/06/1993
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Davis, Paul C.
• Primary Examiner(s): MOTTOLA, STEVEN J
• Application Number:
  US08/043,511
• Time in Patent Office: 511 Days
• Field of Search: 330/252, 330/254, 330/302, 330/306, 307/493, 307/494
• US Class Current: 330/252
• CPC Class Codes: H03F 3/24 of transmitter output stages
• CPC Class Codes: H04B 1/04 Circuits
• CPC Class Codes: H04B 2001/0408 with power amplifiers

Abstract

An amplifier with variable gain which maintains high Q when saturated. A resonant circuit is connected between collector outputs of a differential pair of transistors and RF chokes couple DC supply current to the transistors. The chokes have a high impedance at the desired frequency. The emitters of the differential pair of transistors couple together to form a common output which is connected to a current source. The amount of current from the current source substantially controls the gain of the amplifier. Because the resonant circuit is not shunted with a low impedance even when one of the transistors saturates, the Q of the resonant circuit is maintained.

Claims

1. An amplifier for amplifying to an output RF signals applied to an input, CHARACTERIZED BY:

a differential pair of transistors having a common output and two outputs and two inputs, the inputs coupling to the input of the amplifier and the two outputs coupling to the output of the amplifier;

a current source coupling to the common output of the transistors;

a resonant circuit connected between the two outputs of the transistors; and

high impedance means having a high impedance to RF signals connected between the two outputs of the transistors and a power supply terminal to provide a path for current to the transistors;

wherein RF signals on the two outputs of the differential pair of transistors are not bypassed to ground.

2. The amplifier as recited in claim 1, wherein the current source is a variable source, the amount of current from the current source substantially controls the gain of the amplifier.

3. The amplifier as recited in claim 2, wherein the high impedance means are RF chokes.

4. The amplifier as recited in claim 3, wherein the resonant circuit is a parallel resonant tank circuit.

5. The amplifier as recited in claim 4, wherein the transistors are bipolar transistors, the emitters thereof being coupled together to form the common output and the collectors thereof forming the two outputs.

6. The amplifier as recited in claim 5, further characterized by the resonant tank circuit having an additional winding thereon serving as the output of the amplifier.