Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity

• US 5,345,462 A
• Filed: 03/29/1993
• Issued: 09/06/1994
• Est. Priority Date: 03/29/1993
• Status: Expired due to Term

• Current Assignee: Agere Systems Optoelectronics Guardian Corp (Broadcom, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Choquette, Kent D.
• Primary Examiner(s): Epps, Georgia Y.
• Application Number:
  US08/037,867
• Time in Patent Office: 526 Days
• Field of Search: 372/45, 372/46, 372/96, 372/99
• US Class Current: 372/45.01
• CPC Class Codes: H01S 2301/14 Semiconductor lasers with special structural design for lasing in a specific polarisation mode
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/0264 for monitoring the laser-output
• CPC Class Codes: H01S 5/06236 controlling the polarisation, e.g. TM/TE polarisation switching
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/1835 Non-circular mesa
• CPC Class Codes: H01S 5/18355 having a defined polarisation
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

Applicant has demonstrated that by appropriately shaping the laser gain region one can control the polarization direction of semiconductor vertical cavity lasers and enhance their transverse mode selectivity. Specifically, configuring the transverse cross section to regions have a length-to-width ratio in excess of 1.2 favors emission with polarization in the long dimension at the fundamental mode. A cruciform structure favors emission with switchable orthogonal polarization. The transverse shape can be configured by dry etching a particular cavity shape in index guided lasers or by forming a shaped ion implantation region around gain guided lasers.

Claims

1. In a semiconductor vertical cavity laser of the type comprising a transversely configured active region longitudinally sandwiched between a pair of reflecting layers, said active region having a transverse cross section with a center, the improvement wherein said transversely configured active region has a major dimension constituting the longest line segment in said region passing through said center and a minor dimension constituting the longest line segment perpendicular to said major dimension in said region, said major dimension exceeding said minor dimension by a factor of 1.2 or more.

2. A laser according to claim 1 wherein said active region has a rhomboidal shape having an associated pair of diagonals with said major dimension along one diagonal and said minor dimension along the other diagonal.

3. A laser according to claim 1 wherein said active region has a dumbell shape comprising two intersecting circles with said major dimension along the line between the centers of said circles and said minor dimension along a diameter of one of said circles.

4. A laser according to claim 1 comprising a pair of configured active regions intersecting in a cruciform shape.

6. A laser according to claim 1 or 2 or 3 or 4 or 5 further comprising a photodiode extending peripherally around said active region.

5. A polarization switching semiconductor vertical cavity laser comprising a semiconductor active region longitudinally sandwiched between a pair of reflecting layers, said semiconductor active region transversely configured into a plurality of intersecting regions, each said region having a transverse cross section with a center and each said region having a major dimension constituting the longest line segment in said region passing through said center and a minor dimension constituting the longest line segment perpendicular to said major dimension in said region, said major dimension exceeding said minor dimension by a factor of 1.2 or more, and each said region having separate electrode means.