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Crystallization and doping of amorphous silicon on low temperature plastic

  • US 5,346,850 A
  • Filed: 10/29/1992
  • Issued: 09/13/1994
  • Est. Priority Date: 10/29/1992
  • Status: Expired due to Term
First Claim
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1. A method for improving the crystallinity of a thin film of amorphous silicon directly deposited on a low temperature plastic substrate incapable of withstanding sustained processing temperatures higher than about 180°

  • C. and sustained processing time periods longer than about 105 nanoseconds, comprising the steps of;

    positioning the deposited thin film in a controlled atmosphere; and

    applying at least one pulse from a pulsed high energy source onto the thin film for a time period sufficient to change the crystallinity of the thin film without heating the substrate above a temperature of about 180°

    C. for more than about 105 nanoseconds.

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