Semiconductor device having a particular terminal arrangement

• US 5,347,158 A
• Filed: 08/18/1993
• Issued: 09/13/1994
• Est. Priority Date: 08/19/1992
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Matsuda, Tadashi, Tsunoda, Tetsujiro
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): CLARK, SHEILA V
• Application Number:
  US08/107,616
• Time in Patent Office: 391 Days
• Field of Search: 257/723, 257/724, 257/691, 257/735, 257/787, 257/694, 257/695, 257/706, 361/792, 361/794, 361/704, 361/707
• US Class Current: 257/691
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A semiconductor device for accomplishing high speed switchings with a large current includes a radiation plate, a first conductor fixed on said radiation plate, a first insulating layer fixed on said first conductor, a second conductor fixed on said first insulating layer, at least one semiconductor element and a second insulating layer fixed on said second conductor, a third conductor fixed on said second insulating layer, a fourth conductor for electrically connecting the surface electrode of said semiconductor element with said third conductor, a first power terminal fixed on said second conductor, and a second power terminal fixed on said third conductor. To reduce the internal inductance, said first and second power terminals have a flat part whose width is larger in length than the height. Also, these terminals are adjacently arranged substantially parallel to each other. In this device, the main currents on said first and second power terminals, and on said second and fourth conductors flow in the opposite directions, thus further reducing the internal inductance.

Claims

1. A semiconductor device, comprising:

a radiation plate;

a first conductor fixed on said radiation plate;

a first insulating layer fixed on said first conductor;

a second conductor fixed on said first insulating layer;

at least one semiconductor element and a second insulating layer fixed on said second conductor;

a third conductor fixed on said second insulating layer;

a fourth conductor for electrically connecting the surface electrode of said semiconductor element with said third conductor;

a first power terminal fixed on said second conductor; and

a second power terminal fixed on said third conductor.

2. The semiconductor device as claimed in claim 1, wherein said second insulating layer has areas existing between said semiconductor element and said first power terminal.

3. The semiconductor device as claimed in claim 1, wherein said device is so structured that the main current on said second conductor flows in the opposite direction of the main current on said fourth conductor.

4. A semiconductor device, comprising:

a radiation plate;

a plurality of packaging substrates fixed on said radiation plate;

each of said packaging substrates having a first conductor, a first insulating layer fixed on said first conductor, a second conductor fixed on said first insulating layer, a second insulating layer fixed on said second conductor, and a third conductor fixed on said second insulating layer;

at least one semiconductor element fixed on said second conductor contained in said at least one packaging substrate; and

fourth conductors for electrically connecting said plurality of packaging substrates with each other at a plurality of points.

5. The semiconductor device as claimed in claim 4, wherein said packaging substrates are fixed on said radiation plate in such a way of facing each other in point symmetry.

6. The semiconductor device as claimed in claim 4, wherein said packaging substrates have the same structure.

7. A semiconductor device, comprising:

a first conductor;

a first insulating layer fixed on said first conductor;

a second conductor fixed on said first insulating layer;

at least one semiconductor element fixed on said second conductor;

a first power terminal electrically connected with the front surface electrode of said semiconductor element; and

a second power terminal electrically connected with the back surface electrode of said semiconductor element;

wherein either one of said first or second power terminal has a flat part in which the width is larger than the height in magnitude.

8. The semiconductor device as claimed in claim 7, wherein said flat part of said power terminal has a plurality of bumpers.

9. The semiconductor device as claimed in claim 7, wherein said flat part of said power terminal has a plurality of bumpers arranged in a row.

10. The semiconductor device as claimed in claim 9, wherein the width of said flat part is wider than the distance between said bumpers which exist at the both ends of this flat part.

11. The semiconductor device as claimed in claim 7, wherein each of said first and second power terminals has said flat part, and these parts are arranged substantially parallel to each other.

12. The semiconductor device as claimed in claim 11, wherein the distance between said flat parts of said first and second power terminals is less than 1/5 of the flat part width of either one of said first or second terminal whose width is smaller than that of the other.

13. The semiconductor device as claimed in claim 11, wherein each flat part of said first and second power terminals has bumpers, and these bumpers are arranged substantially parallel with each other.

14. The semiconductor device as claimed in claim 7, wherein either one of said first or second power terminal has a plurality of holes for connecting external wires.

15. The semiconductor device as claimed in claim 7, wherein said device is so constructed that the main current on said first power terminal flows in the opposite direction of the main current on said second power terminal.