Content addressable memory

• US 5,351,208 A
• Filed: 04/27/1992
• Issued: 09/27/1994
• Est. Priority Date: 04/27/1992
• Status: Expired due to Term

• Current Assignee: 8X8, Inc.
• Original Assignee: Medi-Tech
• Inventors: Jiang, Ching-Lin
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): GLEMBOCKI, CHRISTOPHE
• Application Number:
  US07/874,489
• Time in Patent Office: 883 Days
• Field of Search: 365/49, 365/156, 365/190
• US Class Current: 365/49.17
• CPC Class Codes: G11C 15/04 using semiconductor elements

Abstract

A content addressable memory is provided that includes a memory cell and a first plurality of lines connected directly to the gates of access transistors to this memory cell. These access transistors are further connected to a second plurality of lines. The first and second plurality of lines each perform different functions during read, write, and comparison modes. In another embodiment of the present invention, p-channel transistors are used for a match transistor and its associated pass transistors.

Claims

1. A content addressable memory operable at different times in respectively a read mode, a write mode, and a compare mode, comprising:

a memory cell for storing a logic state;

a first plurality of lines which function as word lines during the write mode, as bit lines during the read mode, and as match lines during the comparison mode;

a plurality of switching devices for controllably connecting the memory cell to the first plurality of lines in accordance with logic states on respective control terminals thereof; and

a second plurality of lines respectively coupled to the control terminals of the switching devices, the second plurality of lines functioning as bit lines during the write mode, as word lines during the read mode, and as bit lines during the comparison mode.

2. The content addressable memory of claim 1 wherein said plurality of switching devices are N-channel transistors having drains, sources, and gates.

3. The content addressable memory of claim 2 wherein said second plurality of lines are coupled to said gates of said N-channel transistors.

4. A content addressable memory operable at different times in respectively a read mode, a write mode, and a compare mode, comprising:

a memory cell including;

a first transistor, a source of the first transistor coupled to a first voltage source;

a second transistor, a drain of the second transistor coupled to a drain of the first transistor, a source of the second transistor coupled to a second voltage source;

a third transistor, a source of the third transistor coupled to the first voltage source;

a fourth transistor, a drain of the fourth transistor coupled to a drain of the third transistor, a source of the fourth transistor coupled to the second voltage source,

wherein the drains of the first and second transistors are further coupled to a gate of the third transistor and a gate of the fourth transistor, and the drains of the third and fourth transistors are further coupled to a gate of the first transistor and a gate of the second transistor;

a fifth transistor, a source/drain of the fifth transistor coupled to the drains of the first and second transistors;

a sixth transistor, a source/drain of the sixth transistor coupled to the drains of the third and fourth transistors;

wherein the fifth transistor and the sixth transistor are of identical conductivity types;

a first line coupled to a gate of the fifth transistor, the first line functioning as a bit line during the write mode, as a word line during the read mode, and as a bit line during the compare mode;

a second line coupled to a gate of the sixth transistor, the second line functioning as a bit line during the write mode, as a word line during the read mode, and as a bit line during the compare mode; and

a third line coupled to the drain/source of the fifth transistors the third line functioning as a word line during the write mode, as a bit line during the read mode; and

as a match line during the compare mode; and

a fourth line coupled to the drain/source of the sixth transistor, the fourth line functioning as a word line during the write mode, as a bit line during the read mode, and as a match line during the compare mode.

5. The content addressable memory of claim 4 wherein said first and third transistors are P-channel transistors.

6. The content addressable memory of claim 5 wherein said second and fourth transistors are N-channel transistors.

7. The content addressable memory of claim 4 wherein the state of the fifth and sixth transistors determines whether voltages are transferred between the third and fourth lines, and the memory cell.

8. A content addressable memory comprising:

a memory cell;

a plurality of access transistors connected to the memory cell;

a plurality of pass transistors connected to the memory cell so that a logic state of the memory cell controls the conductivity of respective data paths through the pass transistors; and

a match transistor connected to the data paths of the pass transistors for determining a match condition,

wherein the plurality of pass transistors and the match transistor are p-channel transistors so that the match transistor is off when a read precharge voltage greater than or equal to a source voltage minus a threshold voltage of the match transistor is applied thereto through at least one of the data paths.

9. A content addressable memory comprising:

a memory cell having a true output and a complement output;

a match line;

a first p-channel field effect transistor having a source connected to a pullup voltage node, a drain connected to the match line, and a gate;

a true bit line;

a complement bit line;

a second p-channel field effect transistor having a source/drain connected to the true bit line, a drain/source connected to the gate of the first transistor, and a gate connected to the complement output of the memory cell; and

a third p-channel field effect transistor having a source/drain connected to the complement bit line, a drain/source connected to the gate of the first transistor, and a gate connected to the true output of the memory cell;

wherein the true bit line and the complement bit line receive a precharge voltage greater than or equal to a source voltage minus a threshold voltage of the first p-channel field effect transistor during a read operation, the precharge voltage being applied to the first p-channel field effect transistor through one of the second and third p-channel field effect transistors so that the first p-channel transistor is off during the read operation.

10. A content addressable memory as in claim 9 further comprising:

a first n-channel field effect transistor having a source/drain connected to the true output of the memory cell, a drain/source connected to the true bit line, and a gate;

a second n-channel field effect transistor having a source/drain connected to the complement output of the memory cell, a drain/source connected to the complement bit line, and a gate;

a word line connected to the gate of the first n-channel field effect transistor and to the gate of the second n-channel field effect transistor.

11. A content addressable memory comprising:

a memory cell for storing a logical value and having a true output for furnishing a true of the stored logical value, and a complement output for furnishing a complement of the stored logical value;

a match line;

a first switch having a first current terminal coupled to a pullup voltage node, a second current terminal coupled to the match line, and a control terminal for controlling conduction between the first and second current terminals;

a true bit line;

a complement bit line;

a second switch having a first current terminal coupled to the true bit line, a second current terminal coupled to the control terminal of the first switch, and a control terminal coupled to the complement output of the memory cell for placing the second switch into a conductive condition when the stored logical value is a logical one so that a read precharge voltage on the true bit line is of a value relative to a voltage on the pullup voltage node that places the first swatch in an open position to permit match line conditioning and a logical one on the true bit line places the first switch in an open position to indicate a match condition, and so that a logical zero on the true bit line places the first switch in a closed position to pull up the match line to indicate a match fail condition; and

a third switch having a first current terminal coupled to the complement bit line, a second current terminal coupled to the control terminal of the first switch, and a control terminal coupled to the true output of the memory cell for placing the third switch into a conductive condition when the stored logical value is a logical zero so that a read precharge voltage on the complement bit line is of a value relative to a voltage on the pullup voltage node that places the second switch in an open position to permit match line conditioning and a logical one on the complement bit line places the first switch in an open position to indicate a match condition, and so that a logical zero on the complement bit line places the first switch in a closed position to pull up the match line to indicate a match fail condition.

12. A content addressable memory as in claim 11 further comprising:

word line means coupled to the memory cell to select the memory cell for a memory write or read;

means coupled to the memory cell for writing to the memory cell; and

means coupled to the memory cell for reading from the memory cell.

13. A content addressable memory as in claim 12 further comprising:

means for precharging the true and complement bit lines to a logical one prior to a memory read, whereby the first switch is placed in an open position; and

means for discharging the match line so that the match line is preset to indicate a match condition.

14. A content addressable memory as in claim 13 further comprising means for operating the precharging means and the discharging means concurrently.

15. A content addressable memory comprising:

a memory cell having a plurality of storage nodes;

a plurality of access devices, the access devices having a control terminal, and the access devices having a conduction path coupled to the storage nodes;

a first plurality of lines coupled to the conduction path of the access devices, the first plurality of lines function as word lines during a write mode, as bit lines during a read mode, and as match lines during a comparison mode; and

a second plurality of lines coupled to the terminals of the access devices, the second plurality of lines function as bit lines during the write mode, as word lines during the read mode, and as bit lines during the comparison mode.

16. The content addressable memory of claim 15 wherein the access devices are a first n-channel field effect transistor having a channel, a drain, a source, and a gate, and a second n-channel field effect transistor having a channel, a drain, a source, and a gate, and the first plurality of lines are a first line and a second line, the first line is coupled to the drain/source of the first n-channel field effect transistor and the second line is coupled to the drain/source of the second n-channel field effect transistor.

17. A content addressable memory comprising:

a memory cell having a first storage node and a second storage node;

a first switch having a conductivity type, a control terminal, and having a conduction path coupled to the first storage node;

a second switch having a conductivity type identical to the conductivity type of the first switch, having a control terminal, and having a conduction path coupled to the second storage node;

a first line coupled to the conduction path of the first switch, the first line functioning as a word line during a write mode, as a bit line during a read mode, and as a match line during a comparison mode;

a second line coupled to the conduction path of the second switch, the second line functioning as a word line during the write mode, as a bit line during the read mode, and as a match line during the comparison mode;

a third line coupled to the control terminal of the first switch, the third line functioning as a bit line during the write mode, as a word line during the read mode, and as a bit line during the comparison mode; and

a fourth line coupled to the control terminal of the second switch, the fourth line functioning as a bit line during the write mode, as a word line during the read mode, and as a bit line during the comparison mode.

18. The content addressable memory of claim 17 wherein the first switch and the second switch are n-channel field effect transistors.

19. A content addressable memory operable at different times in respectively a read mode, a write mode, and a compare mode, comprising:

a memory cell having a true signal node and a complement signal node;

a first switch having a first current terminal coupled to the true signal node of the memory cell, a second current terminal, and a control terminal;

a second switch having a first current terminal coupled to the complement signal node of the memory cell, a second current terminal, and a control terminal;

first and second control lines coupled to the control terminals of the first and second switches respectively, the first and second control lines being true and complement bit lines respectively during the write mode, collectively a word line during the read mode, and true and complement bit lines respectively during the compare mode; and

first and second current lines coupled respectively to the second current terminals of the true and complement signal switches respectively, the first and second current lines being collectively a word line during the write mode, true and complement bit lines respectively during the read mode, and collectively a match line during the compare mode.

20. A content addressable memory as in claim 19 further comprising:

a means for selecting the content addressable memory, wherein;

the first and second control lines having a logical one and a logical zero respectively during write mode when selected, collectively a logical one during read mode when selected, and a logical one and a logical zero respectively during compare mode when selected; and

the first and second current lines having, collectively, a logical zero during write mode when selected and floating when not selected, having a logical one and a logical zero during read mode when selected, and collectively precharged during compare mode when selected and indicating a mismatch when at least one of the first and second current lines is subsequently pulled down.