Serially accessible semiconductor memory with multiple level storage cells

• US 5,351,210 A
• Filed: 11/27/1991
• Issued: 09/27/1994
• Est. Priority Date: 11/28/1990
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Saito, Shozo
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): DINH, SON T
• Application Number:
  US07/799,296
• Time in Patent Office: 1,035 Days
• Field of Search: 365/189.09, 365/189.12, 365/203, 365/200, 365/145, 365/189.01, 365/210, 365/221
• US Class Current: 365/189.14
• CPC Class Codes: G11C 11/56 using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 11/5657 using ferroelectric storage elements
• CPC Class Codes: G11C 7/06 Sense amplifiers; Associated circuits , e.g. timing or triggering circuits

Abstract

According to this invention, in a data bit array for storing data, a plurality of memory cells capable of storing 4-level data are arranged in column and row directions. A check bit array for storing check data has a number of bits smaller than that of the data bit array. In the check bit array, a plurality of memory cells capable of storing 4-level data are arranged in column and row directions. A row address decoder selects one row from the check bit array and the data bit array in accordance with address data. Three sense amplifiers are connected to one column of the check bit array and the data bit array. The three sense amplifiers detect levels of data read from a memory cell in accordance with different reference levels in data read access, receive a plurality of precharge levels corresponding to 4-level write data, and write one of the precharged levels in the corresponding memory cell in accordance with write data. A data converter converts levels of data detected by the sense amplifiers into 2-bit data in data read access and selects a sense amplifier in accordance with write data having a plurality of bits in data write access. An input/output circuit serially outputs data supplied from the data converter in data read access and supplies external write data to the data converter in data write access.

Claims

1. A semiconductor memory comprising:

a memory cell array including memory cells arranged in a matrix having row lines and column lines, each of the memory cells being connected to one of the row lines and one of the column lines, each of the memory cells storing a potential corresponding to multi-level data having at least two bits, wherein the memory cells connected to a selected row line simultaneously output the potentials to the corresponding column lines when the selected row line is selected;

an amplifier circuit connected to the memory cell array, the amplifier circuit including a plurality of sense amplifiers, at least two of said sense amplifiers being connected in parallel to one of said column lines, the sense amplifiers detecting the potential read from the memory cells in accordance with different reference potentials supplied to respective sense amplifiers in data read access, each of the sense amplifiers supplied with one of a plurality of potentials corresponding to the multi-level data in data write access;

a data converter connected to the amplifier circuit, the data converter converting potentials output from the amplifier circuit into data having a plurality of bits in data read access and selecting one of the sense amplifiers in accordance with write data having a plurality of bits in data write access, the selected sense amplifier supplying the potential to the respective column line; and

an input/output circuit connected to the data converter, the input/output circuit serially outputting data supplied from the data converter in data read access and supplying external write data to the data converter in data write access.

2. An apparatus according to claim 1, wherein the input/output circuit comprises a shift register.

3. An apparatus according to claim 1, wherein the potentials in each memory cell are set at potentials which are in increments of 1/3 of a power supply voltage.

4. An apparatus according to claim 1, wherein said amplifier circuit reads out memory cell data and rewrites the read data in a corresponding memory cell in accordance with an instruction of said data converter.

5. An apparatus according to claim 1, wherein the memory cell array comprises a first memory cell array for storing normal data and a second memory cell array for storing check data for detecting an error.

6. An apparatus according to claim 5, wherein the check data consist of multi-level data having a number of levels not more than that of the normal data.

7. An apparatus according to claim 5, wherein the first memory cell array is on a semiconductor substrate, and the memory cell array is on the semiconductor substrate.

19. An apparatus according to any one of claims 1, 8, and 16, wherein each of the memory cells comprises a dynamic cell having one transistor and one capacitor.

20. An apparatus according to any one of claims 1, 8, and 16, wherein each of the memory cells comprises an EPROM cell having a floating gate and a control gate.

21. An apparatus according to any one of claims 1, 8, and 16 wherein each of the memory cells comprises a floating gate and ferroelectric material.

8. A semiconductor memory comprising:

a memory cell array including memory cells arranged in a matrix having row lines and column lines, each of the memory cells being connected to one of the row lines and one of the column lines, and each of the memory cells storing a potential corresponding to 4-level data, wherein the memory cells connected to a selected row line simultaneously output the potentials to the corresponding column lines when the selected row line is selected;

an amplifier circuit connected to the memory cell array, the amplifier circuit including at least three sense amplifiers, each of the sense amplifiers being connected in parallel to one of the column lines, each of the sense amplifiers detecting the potential read from one of the memory cells in accordance with different reference potentials supplied to respective sense amplifiers in data read access, and each of the sense amplifiers supplied with one of the potentials corresponding to the 4-level data in data write access;

a data converter connected to the amplifier circuit, the data converter converting potentials output from each of the sense amplifiers into data having a plurality of bits in data read access, and selecting one of the at least three sense amplifiers in accordance with write data having two bits in data write access, the selected sense amplifier supplying the potential to the respective column line; and

an input/output circuit connected to the data converter, the input/output circuit serially outputting data supplied from the data converter in data read access and supplying external write data to the data converter in data write access.

9. An apparatus according to claim 8, wherein the input/output circuit comprises a shift register.

10. An apparatus according to claim 8, wherein the memory cell stores 2-bit data at four levels, and the amplifier circuit comprises three sense amplifiers having three different reference levels set for one column.

11. An apparatus according to claim 8, wherein the potentials in each memory cell are set at potentials which are in increments of 1/3 of a power supply voltage.

12. An apparatus according to claim 8, wherein said amplifier circuit reads out memory cell data and rewrites the read data in a corresponding memory cell in accordance with an instruction of said data converter.

13. An apparatus according to claim 8, wherein the memory cell array comprises a first memory cell array for storing normal data and a second memory cell array for storing check data for detecting an error.

14. An apparatus according to claim 13 wherein the check data are constituted by multi-level data having the number of levels not more than that of the normal data.

15. An apparatus according to claim 13, wherein the first memory cell array is on a semiconductor substrate, and the second memory cell array is on the semiconductor substrate.

16. A semiconductor device comprising:

a first memory cell array including memory cells arranged in a matrix having row lines and column lines, each of the memory cells being connected to one of the row lines and one of the column lines, and each of the memory cells storing a potential corresponding to multi-level data having at least two bits;

a second memory cell array including memory cells arranged in a matrix form having the row lines and the column lines, each of the memory cells being connected to one of the row lines and one of the column lines, each of the memory cells storing a potential as check data corresponding to the multi-level data;

a row address decoder connected to the second memory cell array, the row address decoder selecting one of the row lines of the first and second memory cell arrays in accordance with address data;

an amplifier circuit connected to the first and second memory cell arrays, the amplifier circuit including a plurality of sense amplifiers., at least two of said sense amplifiers being connected in parallel to one of said column lines, the sense amplifiers detecting the potential read from the memory cells in accordance with different reference potentials supplied to respective sense amplifiers in data read access, each of the sense amplifiers supplied with one of the potentials corresponding to the multi-level data in data write access;

a data converter connected to the amplifier circuit, the data converter converting potentials output from the sense amplifiers into data having a plurality of bits in data read access and selecting one of the sense amplifiers in accordance with write data having a plurality of bits in data write access, the selected sense amplifier supplying the potential to the memory cell through the respective column line; and

an input/output circuit connected to the data converter, the input/output circuit serially outputting data, including check data, supplied from the data converter in data read access and supplying external write data to the data converter in data write access;

wherein the first memory cell array is on a semiconductor substrate, and the second memory cell array is on the semiconductor substrate.

17. An apparatus according to claim 16, wherein the input/output circuit comprises a shift register.

18. An apparatus according to claim 16, wherein the potentials in each memory cell are set at potentials which are in increments of 1/3 of a power supply voltage.

22. A semiconductor memory device comprising:

a first memory cell array including memory cells arranged in a matrix having row lines and column lines, each of the memory cells being connected to one of the row lines and one of the column lines, each of the memory cells storing a potential corresponding to 4-level data having at least two bits;

a second memory cell array including memory cells arranged in a matrix having the row lines and the column lines, each of the memory cells being connected to one of the row lines and one of the column lines, each of the memory cells storing a potential as check data corresponding to the 4-level data;

a row address decoder connected to the second memory cell array, the row address decoder selecting one of the lines of the first and second memory cell arrays in accordance with address data;

an amplifier circuit connected to the first and second memory cell arrays, the amplifier circuit including at least three sense amplifiers, each of the sense amplifiers being connected in parallel to one of said column lines, each of the sense amplifiers detecting the level of the potential read from the memory cells in accordance with different reference potentials supplied to respective sense amplifiers in data read access, each of the sense amplifiers being supplied with one of a plurality of potentials corresponding to the 4-level data in data write access;

a data converter connected to the amplifier circuit, the data converter converting potentials output from the sense amplifiers into data having a plurality of bits in data read access and selecting one of the at least three sense amplifiers in accordance with write data having a plurality of bits in data write access, the selected sense amplifier supplying the potential to the memory cell through the respective column line; and

an input/output circuit connected to the data converter, the input/output circuit serially outputting data including check data supplied from the data converter in data read access and supplying external write data to the data converter in data write access;

wherein the first memory cell array is on a semiconductor substrate, and the second memory cell array is on the semiconductor substrate.