Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films
First Claim
1. A method of fabricating diamond-like nanocomposite or doped-diamond-like nanocomposite films containing the constituent elements carbon, hydrogen, silicon, oxygen and metal, comprising:
- depositing onto a substrate by co-deposition a clusterless particle beams comprised of ions, atoms and/or radicals of said constituent elements, the free path length of each of particles of said constituent elements being in excess of the distance between its source and the growing film surface of the substrate; and
wherein at least 50% of carbon particles comprise an energy above 100 eV, and the temperature of the substrate during growth is less than about 500°
C.
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Abstract
The present invention relates to the formation of a class of nanocomposite amorphous materials consisting of interpenetrating random networks of predominantly sp3 bonded carbon stabilized by hydrogen, glass-like silicon stabilized by oxygen and random networks of elements from the 1-7b and 8 groups of the periodic table. The materials have high strength and microhardness, flexibility, low coefficient of friction and high thermal and chemical stability. Nanocomposites containing networks of metallic elements can have conductivity variable from insulating dielectric to metallic. The materials have a wide range of applications as protective coatings and as electrically active materials. Metallic nanocomposites can exhibit superconductivity at low temperatures.
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11 Claims
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1. A method of fabricating diamond-like nanocomposite or doped-diamond-like nanocomposite films containing the constituent elements carbon, hydrogen, silicon, oxygen and metal, comprising:
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depositing onto a substrate by co-deposition a clusterless particle beams comprised of ions, atoms and/or radicals of said constituent elements, the free path length of each of particles of said constituent elements being in excess of the distance between its source and the growing film surface of the substrate; and wherein at least 50% of carbon particles comprise an energy above 100 eV, and the temperature of the substrate during growth is less than about 500°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification