Plasma enhanced chemical vapor deposition of oxide film stack
First Claim
1. An article comprising a substrate and an infrared reflective film stack on a surface of the substrate, the film stack comprising a 10 to 100 nm thick sub-film of amorphous tungsten oxide and a 50 to 1,000 nm thick film of substantially stoichiometric, crystalline tungsten oxide on the sub-film.
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Abstract
A plasma enhanced chemical vapor deposition method is provided for depositing an oxide film onto a substrate surface. Deposition is achieved even onto a surface of a glass or other relatively non-receptive substrate. A sub-film is deposited under plasma enhanced chemical vapor deposition conditions more strongly favoring deposition, followed by deposition of the desired oxide film under second plasma enhanced chemical vapor deposition conditions less strongly favoring deposition. High quality oxide films can be achieved by deposition at second plasma enhanced chemical vapor deposition conditions only marginally favoring deposition over etching.
30 Citations
2 Claims
- 1. An article comprising a substrate and an infrared reflective film stack on a surface of the substrate, the film stack comprising a 10 to 100 nm thick sub-film of amorphous tungsten oxide and a 50 to 1,000 nm thick film of substantially stoichiometric, crystalline tungsten oxide on the sub-film.
Specification
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- Resources
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Current AssigneeFord Motor Company
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Original AssigneeFord Motor Company
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InventorsKrisko, Annette J., Proscia, James W.
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Primary Examiner(s)TURNER, ARCHENE A
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Application NumberUS08/073,230Time in Patent Office487 DaysField of Search428/701, 428/702, 428/446, 428/216, 428/212US Class Current428/216CPC Class CodesC03C 17/3417 all coatings being oxide co...C23C 16/405 of refractory metals or ytt...G02F 1/1524 Transition metal compoundsY10T 428/24942 including components having...Y10T 428/24975 No layer or component great...
