Silicon accelerometer fabrication method

• US 5,352,635 A
• Filed: 01/28/1993
• Issued: 10/04/1994
• Est. Priority Date: 07/12/1990
• Status: Expired due to Fees

• Current Assignee: Elite Laboratories, Inc. (Elite Pharmaceuticals, Inc.)
• Original Assignee: Xiang-Zheng Tu, Yun-Yan Li
• Inventors: Tu, Xiang-Zheng, Li, Yun-Yan
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): HORTON, KENNETH
• Application Number:
  US08/010,500
• Time in Patent Office: 614 Days
• Field of Search: 437/228, 437/901, 148/33.1, 148/33.2, 148/33.3, 257/417, 257/419, 73/517 R
• US Class Current: 438/53
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 2015/084 the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
• CPC Class Codes: Y10S 438/96 Porous semiconductor

Abstract

A silicon accelerometer comprising a substrate, one or more pairs of beams, a pedestal, a mass on top of the pedestal and a cavity beneath the pedestal all of which is formed by a single-sided processing method. The pedestal is suspended over the cavity by the beams which provides the only support for the pedestal. The beams are supported by the substrate. The main steps of fabricating this structure comprise diffusion or ion implantation and epitaxial growth to form a buried high donor concentration layer on the surface of the substrate, chemical vapor deposition and photoetching to expose a portion of the edge of the buried layer to the ambiente, anodization to convert the high donor concentration layer into porous silicon and selectively etching to remove the porous silicon.

Claims

1. A process for fabricating a silicon accelerometer comprising the steps of:

providing a low donor concentration silicon substrate,

forming a high donor concentration silicon layer in a predetermined region on the surface of the substrate by diffusion or ion implantation,

forming a low donor concentration silicon layer over the surface of said substrate by vapor phase epitaxy,

forming at least one opening in said low donor concentration layer thereby exposing edges of said high donor concentration layer,

after said forming at least one opening, converting said high donor concentration layer into porous silicon by anodization, said converting of said high donor concentration layer being bounded by said exposed edges of said high donor concentration layer,

mounting a mass onto the low donor concentration layer,

removing the porous silicon by etching between the substrate and the low donor concentration layer to form a cavity between the substrate and the low donor concentration layer, said etching resulting in a complete removal of the porous silicon.

2. An accelerometer fabrication process according to claim 1 wherein said low donor concentration layer has a concentration between 10¹⁵ and 10¹⁶ cm^-3.

3. An accelerometer fabrication process according to claim 1 wherein said high donor concentration layer has a concentration profile ranging between 10¹⁷ and 10²¹ cm^-3.

4. An accelerometer fabrication process according to claim 1 wherein said anodization is carried out in a hydrofluoric acid solution.

5. An accelerometer fabrication process according to claim 4 wherein hydrofluoric acid solution has a concentration between 10 w% and 50 w%.

6. An accelerometer fabrication process according to claim 1 wherein said anodization is carried out at a constant voltage between 3 and 10 volt.

7. An accelerometer fabrication process according to claim 4 wherein said etching of porous silicon is performed in a diluted alkaline solution.

8. An accelerometer fabrication process according to claim 7 wherein said alkaline solution is ammonia hydroxide solution.

9. An accelerometer fabrication process according to claim 8 wherein said ammonia hydroxide solution has a concentration between 1 w% and 10 w%.

10. An accelerometer fabrication process according to claim 9, wherein said alkaline solution is sodium hydroxide solution.

11. An accelerometer fabrication process according to claim 10 wherein said sodium hydroxide solution has a concentration between 1 w% and 10 w%.

12. An accelerometer fabrication process according to claim 7 wherein said alkaline solution is potassium hydroxide solution.

13. An accelerometer fabrication process according to claim 7 wherein said potassium hydroxide solution has a concentration between 1 w% and 10 w%.

14. An accelerometer fabrication process according to claim 7 wherein said alkaline solution is caesium hydroxide solution.

15. An accelerometer fabrication process according to claim 14 wherein said caesium hydroxide solution has a concentration between 1 w% and 10 w%. and more particularly,

16. The accelerometer fabrication process of claim 4 further comprising the step of forming a hydrofluoric-acid resisting and electrically insulating layer on the low donor concentration layer to serve as a mask in the anodization step.

17. The acceleration fabrication process of claim 16 wherein said hydrofluoric-acid resisting and electrically insulating layer comprises a composite layer consisting of silicon dioxide, silicon nitride, and high resistance polysilicon.

18. The accelerator fabrication process of claim 17 wherein said composite layer is formed by low pressure chemical vapor deposition.

19. The accelerometer fabrication process of claim 1 wherein said at least one opening is formed by plasma etching utilizing a patterned metal layer as an etching mask.